Fairchild FDMS7658AS service manual
FDMS7658AS
4
3
2
1
5
6
7
8
Power 56
D
D
D
D
S
S
S
G
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
N-Channel PowerTrench® SyncFETTM
30 V, 49 A, 1.9 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 1.9 mΩ at VGS = 10 V, ID = 28 A
DS(on)
= 2.2 mΩ at VGS = 7 V, ID = 26 A
DS(on)
DS(on)
General Description
The FDMS7658AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
while maintaining excellent switching performance. This
DS(on)
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
FDMS7658AS N-Channel PowerTrench
December 2011
®
SyncFET
TM
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
dv/dt MOSFET dv/dt 1.5 V/ns
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 49
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 150
Single Pulse Avalanche Energy (Note 3) 162 mJ
Power Dissipation TC = 25 °C 89
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 177
C
= 25 °C (Note 1a) 29
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
©2011 Fairchild Semiconductor Corporation
FDMS7658AS Rev.C1
FDMS7658AS FDMS7658AS Power 56 13 ’’ 12 mm 3000 units
Thermal Resistance, Junction to Case 1.4
Thermal Resistance, Junction to Ambient (Note 1a) 50
1
°C/W
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FDMS7658AS N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
ΔV
GS(th)
ΔT
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
= 10 mA, referenced to 25 °C 23 mV/°C
I
D
= 0 V 500 μA
GS
= 0 V 100 nA
DS
(Note 2)
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.7 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = 5 V, ID = 28 A 181 S
I
= 10 mA, referenced to 25 °C -5 mV/°C
D
V
= 10 V, ID = 28 A 1.5 1.9
GS
= 7 V, ID = 26 A 1.7 2.2
V
GS
= 4.5 V, ID = 23 A 1.9 2.4
V
GS
= 10 V, ID = 28 A, TJ = 125 °C 2.0 2.6
V
GS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 2020 2685 pF
Reverse Transfer Capacitance 150 230 pF
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.4 0.9 Ω
5525 7350 pF
mΩ
®
SyncFET
TM
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 8 17 ns
Turn-Off Delay Time 43 70 ns
V
= 15 V, ID = 28 A,
DD
= 10 V, R
V
GS
GEN
Fall Time 5 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 35 49 nC
Gate to Source Gate Charge 16.4 nC
Gate to Drain “Miller” Charge 6.6 nC
Drain-Source Diode Characteristics
V
= 0 V, IS = 2 A (Note 2) 0.38 0.9
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 73 117 nC
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
GS
= 0 V, IS = 28 A (Note 2) 0.74 1.3
V
GS
= 28 A, di/dt = 300 A/μs
I
F
= 6 Ω
V
DD
= 28 A
I
D
= 15 V,
θJC
20 36 ns
78 109 nC
46 75 ns
is guaranteed by design while R
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
θCA
V
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 162 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 18 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 28 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7658AS Rev.C1
2
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FDMS7658AS N-Channel PowerTrench
0.00.51.01.52.0
0
30
60
90
120
150
VGS = 3.5 V
VGS = 10 V
VGS = 3 V
VGS = 4 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0 .5% MAX
VGS = 4.5 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 30 60 90 120 150
0
1
2
3
4
5
VGS = 4 V
VGS = 4.5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
VGS = 10 V
VGS = 3.5 V
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = 28 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
2
4
6
8
TJ = 125 oC
ID = 28 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
30
60
90
120
150
TJ = 125 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
300
TJ = -55 oC
TJ = 25 oC
TJ = 125 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
®
SyncFET
TM
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
FDMS7658AS Rev.C1
Figure 5. Transfer Characteristics
Figure 4.
O n - R es i s t a n c e vs G a t e t o
Source Voltage
Figure 6.
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
3
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