Fairchild FDMS7656AS service manual
FDMS7656AS
DS(on)
™
General Description
The FDMS7656AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
while maintaining excellent switching performance. This
DS(on)
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
N-Channel PowerTrench® SyncFET
30 V, 49 A, 1.8 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 1.8 mΩ at VGS = 10 V, ID = 30 A
DS(on)
= 1.9 mΩ at VGS = 7 V, ID = 27 A
DS(on)
FDMS7656AS N-Channel PowerTrench
September 2009
®
SyncFET
™
Top
D
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
dv/dt MOSFET dv/dt 1.3 V/ns
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 49
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 180
Single Pulse Avalanche Energy (Note 3) 242 mJ
Power Dissipation TC = 25 °C 96
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
A
Bottom
D
D
D
= 25 °C unless otherwise noted
Pin 1
S
S
S
G
= 25 °C 194
C
= 25 °C (Note 1a) 31
A
= 25 °C (Note 1a) 2.5
A
D
5
D
6
D
7
D
8
G
4
S
3
S
2
S
1
W
Thermal Characteristics
A
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.3
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7656AS FDMS7656AS Power 56 13 ’’ 12 mm 3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7656AS Rev.C
°C/W
1
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FDMS7656AS N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
I
= 10 mA, referenced to 25 °C 19 mV/°C
D
= 0 V 500 µA
GS
= 0 V 100 nA
DS
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.6 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 10 mA, referenced to 25 °C -5 mV/°C
D
= 10 V, ID = 30 A 1.3 1.8
V
GS
V
= 7 V, ID = 27 A 1.5 1.9
GS
= 4.5 V, ID = 25 A 1.6 2.0
V
GS
= 10 V, ID = 30 A, TJ = 125 °C 1.8 2.5
V
GS
Forward Transconductance VDS = 5 V, ID = 30 A 161 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 2465 3280 pF
Reverse Transfer Capacitance 210 315 pF
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.5 1.1 Ω
6545 8705 pF
mΩ
®
SyncFET
™
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 12 21 ns
Turn-Off Delay Time 50 80 ns
Fall Time 713ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 43 60 nC
Gate to Source Charge 18.2 nC
Gate to Drain “Miller” Charge 9.1 nC
= 15 V, ID = 30 A,
V
DD
V
= 10 V, R
GS
GEN
Drain-Source Diode Characteristics
V
= 0 V, IS = 2 A (Note 2) 0.37 0.7
V
SD
t
rr
Q
rr
Notes:
is determined with the device mou nted on a 1 i n2 pad 2 oz copper pad on a 1.5 x 1 .5 in. boar d of FR-4 ma terial. R
1. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 84 136 nC
a. 50 °C/W when mounted on a
2
1 in
GS
= 0 V, IS = 30 A (Note 2) 0.74 1.2
V
GS
= 30 A, di/dt = 300 A/µs
I
F
pad of 2 oz copper.
= 6 Ω
V
DD
I
= 30 A
D
= 15 V,
θJC
22 35 ns
95 133 nC
50 81 ns
is guaranteed by design while R
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
θCA
V
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. EAS of 242 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 22 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 34 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7656AS Rev.C
2
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FDMS7656AS N-Channel PowerTrench
Typical Characteristics T
180
150
120
90
60
DRAIN CURRENT (A)
,
D
I
30
0
0.0 0.5 1.0 1.5 2.0
Figure 1.
1.5
ID = 30 A
1.4
1.3
1.2
1.1
1.0
NORMALIZED
0.9
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.7
= 10 V
V
GS
-75 -50 -25 0 25 50 75 100 125 150
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
PULSE DURA TION = 80 µs
DUTY CYCLE = 0.5% MAX
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
On Region Characteristics Figure 2.
T
, JUNCTION TEMPERATURE (
J
= 25 °C unless otherwise noted
J
VGS = 3 V
o
C)
6
5
VGS = 3 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
4
3
NORMALIZED
2
VGS = 3.5 V
V
= 4 V
GS
1
V
DRAIN TO SOURCE ON-RESISTANCE
0
0 30 60 90 120 150 180
VGS = 4.5 V
I
,
DRAIN CURRENT (A)
D
GS
= 10 V
Nor m a l i z e d On-Resis t a n c e
vs Drain Current and Gate Voltage
6
)
Ω
m
(
ID = 30 A
4
DRAIN TO
,
2
DS(on)
r
SOURCE ON-RESISTANCE
0
246810
V
,
GATE TO SOURCE VO LTAGE (V)
GS
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
TJ = 125 oC
TJ = 25 oC
®
SyncFET
™
Fi gure 3 . No r mali zed O n Res i sta n ce
180
150
120
90
60
, DRAIN CURRENT (A)
D
I
30
0
Figure 5. Transfer Characteristics
FDMS7656AS Rev.C
vs Junction Temperature
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
V
= 5 V
DS
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
1234
VGS, GATE TO SOURCE VOLTAGE (V)
, REVERSE DRAIN CURRENT (A)
S
I
0.001
3
Figure 4.
On-Re sistance v s Gate to
Source Voltage
200
100
V
= 0 V
GS
10
TJ = 125 oC
1
0.1
TJ = 25 oC
TJ = -55 oC
0.01
0.0 0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Sou rce to Drain Diode
Forward Voltage vs Source Current
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