Fairchild FDMS7650 service manual

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Pin 1

S

G

S

S

D

D

D

D

G

S

S

S

D

D

D

D

5

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8

3

2
1

4

Power 56

FDMS7650

N-Channel PowerTrench® MOSFET

30 V, 100 A, 0.99 mΩ
Features

 Max r
 Max r
 Advanced Package and Silicon combination for low r

and high efficiency

 MSL1 robust package design
 100% UIL tested
 RoHS Compliant

= 0.99 mΩ at VGS = 10 V, ID = 36 A

DS(on)

= 1.55 mΩ at VGS = 4.5 V, ID = 32 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge and extremely low r

Applications

 OringFET
 Synchronous rectifier

DS(on)

FDMS7650 N-Channel PowerTrench

January 2012

.

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 100

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200
Single Pulse Avalanche Energy (Note 3) 544 mJ
Power Dissipation TC = 25 °C 104
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

C

= 25 °C 232

C

= 25 °C (Note 1a) 36

A

= 25 °C (Note 1a) 2.5

A

A

W

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.2
Thermal Resistance, Junction to Ambient (Note 1a) 50

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS7650 FDMS7650 Power 56 13 ’’ 12 mm 3000 units

©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3

1

www.fairchildsemi.com

FDMS7650 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current VGS = 20 V, V

I

= 250 μA, referenced to 25 °C 15 mV/°C

D

= 0 V 1 μA

GS

= 0 V 100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA11.93V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -6 mV/°C

D

V

= 10 V, ID = 36 A 0.8 0.99

GS

= 4.5 V, ID = 32 A 1.1 1.55

GS

= 10 V, ID = 36 A, TJ = 125 °C 1.1 1.7

V

GS

Forward Transconductance VDS = 5 V, ID = 36 A 267 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 3050 4055 pF
Reverse Transfer Capacitance 240 360 pF
Gate Resistance 1.4 3 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 24 38 ns
Turn-Off Delay Time 83 133 ns
Fall Time 21 34 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 63 88 nC
Gate to Source Charge 34 nC
Gate to Drain “Miller” Charge 13 nC

= 15 V, VGS = 0 V,

V

DS

f = 1 MHz

= 15 V, ID = 36 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

V

DD

I

= 36 A

D

= 15 V,

11250 14965 pF

28 45 ns

149 209 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

= 0 V, IS = 2.1 A (Note 2) 0.7 1.2

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.

3. Starting TJ = 25 °C, L = 1 mH, IAS = 33 A, VDD = 27 V, VGS = 10 V.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 56 90 nC

a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.

GS

= 0 V, IS = 36 A (Note 2) 0.8 1.3

V

GS

= 36 A, di/dt = 100 A/μs

I

F

2

69 97 ns

is guaranteed by design while R

θJC

b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.

V

is determined by

θCA

www.fairchildsemi.com

FDMS7650 N-Channel PowerTrench

0 0.5 1.0 1.5 2.0

0

40

80

120

160

200

VGS = 4.5 V

VGS = 10 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 3 V

VGS = 3.5 V

VGS = 4 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 40 80 120 160 200

0

1

2

3

4

5

6

7

V

GS

= 4.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 10 V

VGS = 3 V

VGS = 4 V

V

GS

= 3.5 V

-75 -50 -25 0 25 50 75 100 125 150

0.8

1.0

1.2

1.4

1.6

ID = 36 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

2

4

6

8

10

ID = 36A

TJ = 25 oC

TJ = 125 oC

V

GS

, GATE TO S OURCE VOLTAGE ( V )

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

1234

0

40

80

120

160

200

V

DS

= 3 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURC E VO LTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.1

1

10

100

200

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

®

MOSFET

Nor m a l i z e d On-Resis t a n c e

vs Drain Current and Gate Voltage

Fi gure 3 . No r mali zed O n Res i sta n ce

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3

Figure 5. Transfer Characteristics

Figure 4.

On-Re sistance v s Gate to

Source Voltage

Figure 6.

Sou rce to Drain Diode

Forward Voltage vs Source Current

3

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