Fairchild FDMS7608S service manual

FDMS7608S

Power 56

S2

G2

D1

G1

D1

S1/D2

S2

G2

D1

G1

Top

Bottom

Pin1

Q2

Q1

Dual N-Channel PowerTrench® MOSFET

Q1: 30 V, 22 A, 10.0 mΩ Q2: 30 V, 30 A, 6.3 mΩ

FDMS7608S Dual N-Channel PowerTrench

June 2011

Features

Q1: N-Channel

 Max r  Max r

Q2: N-Channel

 Max r  Max r

 RoHS Compliant

= 10.0 mΩ at VGS = 10 V, ID = 12 A

DS(on)

= 13.6 mΩ at VGS = 4.5 V, ID = 10 A

DS(on)

= 6.3 mΩ at VGS = 10 V, ID = 15 A

DS(on)

= 7.2 mΩ at VGS = 4.5 V, ID = 13 A

DS(on)

General Description

This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Applications

 Computing  Communications  General Purpose Point of Load  Notebook VCORE

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

E

AS

P

D

TJ, T

STG

Drain to Source Voltage 30 30 V Gate to Source Voltage (Note 3) ±20 ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 22 30

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 50 60 Single Pulse Avalanche Energy (Note 4) 29 33 mJ Power Dissipation for Single Operation TA = 25°C 2.2 Power Dissipation for Single Operation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

A

= 25 °C 46 60

C

= 25 °C 12

A

= 25°C 1.0

A

1a

1a 1c

15

2.5

1.0

1b

1b 1d

A

W

Thermal Characteristics

R

θJA θJA

R

θJC

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS7608S FDMS7608S Power 56 13 ” 12

Thermal Resistance, Junction to Ambient 57 Thermal Resistance, Junction to Ambient 125 Thermal Resistance, Junction to Case 4.0 3.2

1a

1c

mm 3000 units

50

120

1b

1d

°C/WR

FDMS7608S Dual N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

ΔBV ΔT

I

DSS

I

GSS

DSS

DSS J

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current V

Gate to Source Leakage Current V

= 250 μA, VGS = 0 V

D

I

= 1 mA, VGS = 0 V

D

I

= 250 μA, referenced to 25°C

D

I

= 10 mA, referenced to 25°C

D

= 24 V, V

DS

= 20 V, V

GS

DS

= 0 V = 0 V

Q1Q230

30

Q1 Q2

V

13 19

mV/°C

1

500 100

100nAnA

I

On Characteristics

V

GS(th)

ΔV ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance

= VDS, I

GS

V

= VDS, I

GS

I

= 250 μA, referenced to 25°C

D

I

= 10 mA, referenced to 25°C

D

= 10 V, ID = 12 A

V

GS

V

= 4.5 V, ID = 10 A

GS

V

= 10 V, ID = 12 A, T

GS

V

= 10 V, ID = 15 A

GS

V

= 4.5 V, ID = 13 A

GS

V

= 10 V, ID = 15 A, T

GS

V

= 5 V, ID = 12 A

DD

V

= 5 V, ID = 15 A

DD

= 250 μA

D

= 1 mA

D

= 125°C

J

= 125°C

J

Q1Q21.2

1.2

Q1 Q2

Q1

Q2

Q1 Q2

1.9

1.7

-6

-4

7.4

10.0

10.3

4.8

6.0

6.6 54

76

3.0

3.0 mV/°C

10.0

13.6

13.9

6.3

7.2

8.6

μA

V

mΩ

S

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

gs

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge V

Gate to Source Charge

Gate to Drain “Miller” Charge

1135

Q1:

= 15 V, VGS = 0 V, f = 1 MHZ

V

DS

Q2:

= 15 V, VGS = 0 V, f = 1 MHZ

V

DS

Q1 Q2

Q1Q20.2

0.2

1380

390 478

42 60

1.6

0.5

1510 1835

520 635

65 90

3.2

2.0

pF

Ω

7

19 20

18 21

12

14 14

10 10

35 36

10 10

24 30

14 16

ns

nC

7 3

3

3 2

9

nC

Q1 V

= 15 V, ID = 12 A, R

DD

Q2 V

= 15 V, ID = 15 A, R

DD

= 0V to 10 V

GS

= 0V to 5 V

GS

Q1 V

DD

I

= 12 A

D

Q2 V

DD

I

= 15 A

D

= 6 Ω

GEN

= 6 Ω

GEN

= 15 V,

Q1 Q2

3.6

3.5

2.5

3.0

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

25 21

19

9

1.1

1.2

0.8

1.2

40 34

18 33

is determined by

θCA

V

= 0 V, IS = 2 A (Note 2)

GS

V

= 0 V, IS = 12 A (Note 2)

V

SD

t

rr

Q

rr

Notes:

1.R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

Source-Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

GS

V

= 0 V, IS = 2 A (Note 2)

GS

V

= 0 V, IS = 15 A (Note 2)

GS

Q1

= 12 A, di/dt = 100 A/μs

I

F

Q2 I

= 15 A, di/dt = 300 A/μs

F

Q1 Q1 Q2 Q2

Q1 Q2

is guaranteed by design while R

θJC

0.75

0.84

0.63

0.80

FDMS7608S Dual N-Channel PowerTrench

V

ns

nC

a. 57 °C/W when mounted on

2

pad of 2 oz copper

a 1 in

c. 125 °C/W when mounted on a minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

4. Q1: EAS of 29 mJ is based on starting TJ = 25 oC; N-ch: L = 0.3 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V. 100% tested at L = 3 mH, IAS = 3.75 A. Q2: EAS of 33 mJ is based on starting TJ = 25 oC; N-ch: L = 0.3 mH, IAS = 15 A, VDD = 27 V, VGS = 10 V. 100% tested at L = 3 mH, IAS = 3.9 A.

b. 50 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

d. 120 °C/W when mounted on a minimum pad of 2 oz copper

®

MOSFET

FDMS7608S Dual N-Channel PowerTrench

0.00.51.01.52.0

0

10

20

30

40

50

V

GS

= 3 V

V

GS

= 6 V

V

GS

= 4 V

V

GS

= 10 V

V

GS

= 4.5 V

V

GS

= 3.5 V

PULSE DURATION = 80 μ s DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 1020304050

0

1

2

3

4

5

6

VGS = 3 V

VGS = 6 V

VGS = 3.5 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4 V

VGS = 4.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 12 A V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

2345678910

0

10

20

30

40

TJ = 125 oC

ID = 12 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTA G E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

1.5 2.0 2.5 3.0 3.5 4.0 4.5

0

10

20

30

40

50

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

50

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics (Q1 N-Channel) T

Figure 1.

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

Nor mal ize d On -Re sis tan ce

vs Drain Current and Gate Voltage

®

MOSFET

Figure 3 . Norma li zed On Re si stanc e

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Di ode

Forward Voltage vs Source Current