Fairchild FDMS7606 service manual

FDMS7606

Power 56

S2

G2

D1

G1

D1

S1/D2

Top

Bottom

Pin1

S2

G2

D1

G1

4

3

2

1

5

6

7

8

Q2

Q1

Dual N-Channel PowerTrench® MOSFET

Q1: 30 V, 12 A, 11.4 mΩ Q2: 30 V, 22 A, 11.6 mΩ

FDMS7606 Dual N-Channel PowerTrench

May 2011

Features

Q1: N-Channel

 Max r  Max r

Q2: N-Channel

 Max r  Max r

 RoHS Compliant

= 11.4 mΩ at VGS = 10 V, ID = 11.5 A

DS(on)

= 15.7 mΩ at VGS = 4.5 V, ID = 10 A

DS(on)

= 11.6 mΩ at VGS = 10 V, ID = 12 A

DS(on)

= 17.2 mΩ at VGS = 4.5 V, ID = 9.5 A

DS(on)

General Description

This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.

Applications

 Computing  Communications  General Purpose Point of Load  Notebook Charger

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

E

AS

P

D

TJ, T

STG

Drain to Source Voltage 30 30 V Gate to Source Voltage (Note 3) ±20 ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 12 22

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 50 60 Single Pulse Avalanche Energy (Note 4) 25 33 mJ Power Dissipation for Single Operation TA = 25°C 2.2 Power Dissipation for Single Operation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

A

= 25 °C 41 39

C

= 25 °C 11.5

A

= 25°C 1.0

A

1a

1a 1c

12

2.5

1.0

1b

1b 1d

A

W

Thermal Characteristics

R

θJA θJA

R

θJC

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS7606 FDMS7606 Power 56 13 ” 12

Thermal Resistance, Junction to Ambient 57 Thermal Resistance, Junction to Ambient 125 Thermal Resistance, Junction to Case 4.6 4.7

1a

1c

mm 3000 units

50

120

1b

1d

°C/WR

FDMS7606 Dual N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

ΔBV ΔT

I

DSS

I

GSS

DSS

DSS J

Drain to Source Breakdown Voltage I Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current V

Gate to Source Leakage Curent

= 250 μA, VGS = 0 V

D

I

= 250 μA, referenced to 25°C

D

= 24 V, V

DS

V

= 20 V, V

GS

V

= ±20 V, V

GS

= 0 V

GS

= 0 V

DS

= 0 V

DS

Q1Q230

30

Q1 Q2

V

16 20

±100

mV/°C

1 1

100

On Characteristics

V

GS(th)

ΔV ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, I Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance

I

= 250 μA, referenced to 25°C

D

= 10 V, ID = 11.5 A

V

GS

V

= 4.5 V, ID = 10 A

GS

V

= 10 V, ID = 11.5 A, T

GS

V

= 10 V, ID = 12 A

GS

V

= 4.5 V, I= 9.5 A

GS

V

= 10 V, ID = 12 A, T

GS

V

= 5 V, ID = 11.5 A

DD

V

= 5 V, ID = 12 A

DD

= 250 μA

D

= 125°C

J

= 125°C

J

Q1Q21.0

Q1 Q2

Q1

Q2

Q1 Q2

1.0

2.1

1.9

-6

-5.5

9.2

12.6

11.8

9.7

12.8

12.3 53

47

3.0

3.0 mV/°C

11.4

15.7

14.7

11.6

17.2

15.4

μA

nA

V

mΩ

S

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

gs

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge V

Gate to Source Charge

Gate to Drain “Miller” Charge

1050

Q1:

= 15 V, VGS = 0 V, f = 1 MHZ

V

DS

Q2:

= 15 V, VGS = 0 V, f = 1 MHZ

V

DS

Q1 Q2

Q1Q20 . 2

0.2

1400

947

1260

295

395

191

255

32

13150200

1.6

4 . 0

1.0

2.5

pF

Ω

7

18 19

16 19

10

14 12

10 10

33 34

10 10

22 27

11 15

ns

nC

6 3

3

3 3

8

nC

Q1 V

= 15 V, ID = 11.5 A, R

DD

Q2 V

= 15 V, ID = 12 A, R

DD

= 0V to 10 V

GS

= 0V to 5 V

GS

GEN

Q1 V

= 15 V,

DD

I

= 11.5 A

D

Q2 V

= 15 V,

DD

I

= 12 A

D

GEN

= 6 Ω

Q1 Q2

3.2

2.6

2.0

4.2

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

22 18

7 6

1.2

35 33

13 12

is determined by

θCA

V

= 0 V, IS = 2 A (Note 2)

GS

V

= 0 V, IS = 11.5 A (Note 2)

V

SD

t

rr

Q

rr

Notes:

1.R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. bo ard of FR-4 material. R

θJA

the user's board design.

Source-Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

GS

V

= 0 V, IS = 2 A (Note 2)

GS

V

= 0 V, IS = 12 A (Note 2)

GS

Q1

= 11.5 A, di/dt = 100 A/s

I

F

Q2 I

= 12 A, di/dt = 100 A/s

F

Q1 Q1 Q2 Q2

0.76

0.87

0.75

0.85

Q1 Q2

is guaranteed by design while R

θJC

FDMS7606 Dual N-Channel PowerTrench

V

ns

nC

a. 57 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

c. 125 °C/W when mounted on a minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied

4. Q1: E Q2: E

of 25 mJ is based on starting TJ = 25 oC, L = 0.3 mH, IAS = 13 A, VDD = 27 V, VGS = 10 V.

AS

of 33 mJ is based on starting TJ = 25 oC, L = 0.3 mH, IAS = 15 A, VDD = 27 V, VGS = 10 V.

AS

b. 50 °C/W when mounted on a 1 in

d. 120 °C/W when mounted on a minimum pad of 2 oz copper

2

pad of 2 oz copper

®

MOSFET

FDMS7606 Dual N-Channel PowerTrench

0.00.51.01.52.0

0

10

20

30

40

50

V

GS

= 6 V

V

GS

= 4 V

V

GS

= 10 V

V

GS

= 4.5 V

V

GS

= 3.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 1020304050

0

1

2

3

4

5

VGS = 6 V

VGS = 3.5 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4 V

VGS = 4.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 11.5 A V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

8

16

24

32

TJ = 125 oC

ID = 11.5 A

TJ = 25 oC

V

GS

, GATE TO S O URCE VOLTAGE (V )

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

1.5 2.0 2.5 3.0 3.5 4.0 4.5

0

10

20

30

40

50

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

50

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics (Q1 N-Channel) T

Figure 1.

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

Nor mali zed O n-R esis tanc e

vs Drain Current and Gate Voltage

®

MOSFET

Figur e 3. No rma liz ed On R esist anc e

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resi stance v s Gate to

Source Voltage

Figure 6.

Source t o Drain Diode

Forward Voltage vs Source Current