Fairchild FDMS7602S service manual

FDMS7602S

Q

Power 56

S2

G2

D1

G1

D1

S1/D2

S2

S2 S2 G2

D1

D1 D1

G1

Top Bottom

Dual N-Channel PowerTrench® MOSFET

Q1: 30 V, 30 A, 7.5 mΩ Q2: 30 V, 30 A, 5.0 mΩ

Features

Q1: N-Channel

 Max r  Max r

Q2: N-Channel

 Max r  Max r

 RoHS Compliant

= 7.5 mΩ at VGS = 10 V, ID = 12 A

DS(on)

= 12 mΩ at VGS = 4.5 V, ID = 10 A

DS(on)

= 5.0 mΩ at VGS = 10 V, ID = 17 A

DS(on)

= 6.8 mΩ at VGS = 4.5 V, ID = 14 A

DS(on)

General Description

This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Applications

 Computing  Communications  General Purpose Point of Load  Notebook VCORE

FDMS7602S Dual N-Channel PowerTrench

August 2010

®

MOSFET

2

5 6 7 8

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

P

D

TJ, T

STG

Drain to Source Voltage 30 30 V Gate to Source Voltage (Note 3) ±20 ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 30 30

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 40 60 Power Dissipation for Single Operation TA = 25 °C 2.2 Power Dissipation for Single Operation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 50 80

C

= 25 °C 12

A

= 25 °C 1.0

A

1a

1a 1c

1

17

2.5

1.0

4 3 2 1

1b

1b 1d

A

W

Thermal Characteristics

R

θJA θJA

R

θJC

Thermal Resistance, Junction to Ambient 57 Thermal Resistance, Junction to Ambient 125 Thermal Resistance, Junction to Case 3.5 2

1a

1c

50

120

1b

1d

°C/WR

Package Marking and Ordering Information

1

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Device Marking Device Package Reel Size Tape Width Quantity

FDMS7602S FDMS7602S Power 56 13 ” 12 mm 3000 units

FDMS7602S Dual N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

ΔBV ΔT

I

DSS

I

GSS

DSS

DSS J

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

ID = 250 μA, VGS = 0 V ID = 1 mA, VGS = 0 V

ID = 250 μA, referenced to 25 °C ID = 1 mA, referenced to 25 °C

Zero Gate Voltage Drain Current VDS = 24 V, V

Gate to Source Leakage Current

VGS = 20 V, VDS= 0 V VGS = 20 V, VDS= 0 V

GS

= 0 V

Q1Q230

30

Q1 Q2

15 15

V

mV/°C

1

500 100

100

On Characteristics

V

GS(th)

ΔV ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250 μA VGS = VDS, ID = 1 mA

ID = 250 μA, referenced to 25 °C ID = 1 mA, referenced to 25 °C

VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 10 A VGS = 10 V , ID = 12 A , TJ = 125 °C

VGS = 10 V, ID = 17 A VGS = 4.5 V, ID = 14 A VGS = 10 V , ID = 17 A , TJ = 125 °C

VDS = 5 V, ID = 12 A VDS = 5 V, ID = 17 A

Q1Q21

Q1 Q2

Q1

Q2

Q1 Q2

1.8

1

1.8

-6

-5

6.0

8.5

8.3

4.2

5.4

4.9

3 3

mV/°C

7.5 12 12

5.0

6.8

7.2

63 87

μA μA

nA nA

V

mΩ

S

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

g

Q

gs

Q

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

Q1: V

= 15 V, VGS = 0 V, f = 1 MHZ

DS

Q2: V

= 15 V, VGS = 0 V, f = 1 MHZ

DS

Q1: VDD = 15 V, ID = 12 A, R

Q2: VDD = 15 V, ID = 17 A, R

= 0 V to 10 V

GS

Q1 VDD = 15 V,

= 0 V to 4.5 V

GS

ID = 12 A

Q2 VDD = 15 V, ID = 17 A

Q1 Q2

GEN

= 6 Ω

Q1 Q2

Q1

GEN

= 6 Ω

Q2 Q1

Q2

1315 2020

445 860

45 9570145

0.9

0.7

8.61118

2.5

3.81010 20

27

2.3

3.21010 20

33

9.31613

4.3

5.8

2.2

4.6

1750 2690

600

1145

20

32 43

28 46

22

pF

Ω

ns

nC

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FDMS7602S Dual N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

0.8

V

= 0 V, IS = 12 A (Note 2)

V

SD

t

rr

Q

rr

Notes: 1: R

θJA

by the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

a. 57 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

c. 125 °C/W when mounted on a minimum pad of 2 oz copper

GS

V

= 0 V, IS = 17 A (Note 2)Q1Q2

GS

Q1 I

= 12 A, di/dt = 100 A/μs

F

Q2 I

= 17 A, di/dt = 300 A/μs

F

Q1 Q2

is guaranteed by design wh ile R

θJC

b. 50 °C/W when mounted on a 1 in

d. 120 °C/W when mounted on a minimum pad of 2 oz copper

2

pad of 2 oz copper

0.8 272943

103118

1.2

46

50

θCA

is determined

V

ns

nC

®

MOSFET

2: Pulse Test: Pulse Wid th < 300 μs, Duty cycle < 2.0%. 3: As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

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FDMS7602S Dual N-Channel PowerTrench

0.0 0.5 1.0 1.5 2.0

0

10

20

30

40

VGS = 4.5 V

VGS = 3.5 V

V

GS

= 6 V

VGS = 4 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 10203040

0

1

2

3

4

VGS = 4 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4.5 V

VGS = 6 V

VGS = 3.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.8

1.0

1.2

1.4

1.6

ID = 12 A V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

10

20

30

40

TJ = 125 oC

ID = 12 A

TJ = 25 oC

V

GS

, GATE TO S OURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

1.5 2.0 2.5 3.0 3.5 4.0

0

10

20

30

40

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

40

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics (Q1 N-Channel)T

Figure 1. On Region Characteristics Figure 2. Norm a l ized O n -Resi s tance

= 25°C unless otherwise noted

J

vs Drain Current and Gate Voltage

®

MOSFET

Fi g ure 3 . Nor mali z ed On Resi stan ce

vs Junction Temperature

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Figure 4. On- Re sistance vs Gate to

Source Voltage

Forward Voltage vs Source Current

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