Fairchild FDMS7600AS service manual

FDMS7600AS

Dual N-Channel PowerTrench® MOSFET

N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.8 mΩ

Features

Q1: N-Channel

 Max r  Max r

Q2: N-Channel

 Max r  Max r

 RoHS Compliant

= 7.5 mΩ at VGS = 10 V, ID = 12 A

DS(on)

= 12 mΩ at VGS = 4.5 V, ID = 10 A

DS(on)

= 2.8 mΩ at VGS = 10 V, ID = 20 A

DS(on)

= 3.3 mΩ at VGS = 4.5 V, ID = 18 A

DS(on)

General Description

This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Applications

 Computing

FDMS7600AS Dual N-Channel PowerTrench

December 2009

 Communications  General Purpose Point of Load  Notebook V

S2

S1/D2

D1

Top

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

P

D

TJ, T

STG

Drain to Source Voltage 30 30 V Gate to Source Voltage (Note 3) ±20 ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 30 40

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 40 60 Power Dissipation for Single Operation TA = 25 °C 2.2 T Operating and Storage Junction Temperature Range -55 to +150 °C

Power 56

= 25 °C unless otherwise noted

A

G1

Bottom

S2

G2

CORE

S2

S2 S2 G2

= 25 °C 50 120

C

= 25 °C 12

A

= 25 °C 1.0

A

Q 2

5 6 7 8

1a

1a 1c

Q 1

1b

22

1b

2.5

1d

1.0

Thermal Characteristics

R

θJA θJA

R

θJC

Thermal Resistance, Junction to Ambient 57 Thermal Resistance, Junction to Ambient 125 Thermal Resistance, Junction to Case 3.5 2

1a

1c

50

120

1b

1d

Package Marking and Ordering Information

®

MOSFET

D1

4

D1

3

D1

2

G1

1

A

W

°C/WR

Device Marking Device Package Reel Size Tape Width Quantity

FDMS7600AS FDMS7600AS Power 56 13 ” 12 mm 3000 units

1

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FDMS7600AS Dual N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

∆BV ∆T

I

DSS

I

GSS

DSS

DSS J

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 24 V, V

Gate to Source Leakage Current VGS = 20 V, VDS= 0 V

On Characteristics

V

GS(th)

∆V ∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance

ID = 250 µA, VGS = 0 V ID = 1 mA, VGS = 0 V

ID = 250 µA, referenced to 25 °C ID = 1 mA, referenced to 25 °C

= 0 V

GS

VGS = VDS, ID = 250 µA VGS = VDS, ID = 1 mA

ID = 250 µA, referenced to 25 °C ID = 1 mA, referenced to 25 °C

VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 10 A VGS = 10 V , ID = 12 A , TJ = 125 °C

VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 18 A VGS = 10 V , ID = 20 A , TJ = 125 °C

VDS = 5 V, ID = 12 A VDS = 5 V, ID = 20 A

Q1Q230

30

Q1 Q2

Q1Q21

Q1 Q2

Q1

Q2

Q1 Q2

1

15 18

1.8

1.5

6.0

8.5

8.3

2.2

2.6

2.6 63

190

V

mV/°C

1

500µAµA 100

100nAnA

3 3

-6

-5

mV/°C

7.5 12 12

2.8

3.3

3.8

V

mΩ

S

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

g

Q

gs

Q

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

Q1: V

= 15 V, VGS = 0 V, f = 1 MHZ

DS

Q2: V

= 15 V, VGS = 0 V, f = 1 MHZ

DS

Q1: VDD = 15 V, ID = 12 A, VGS = 10 V, R

GEN

= 6 Ω

Q2: VDD = 15 V, ID = 20 A, VGS = 10 V, R

= 0 V to 10 V

GS

GEN

= 6 Ω

Q1 VDD = 15 V,

= 0 V to 4.5 V

GS

ID = 12 A

Q2 VDD = 15 V, ID = 20 A

Q1 Q2

1315

1750

5265

7005

445

2150

600

2860

45

20070300

0.9

0.3

8.61818

2.5

7.61016 20

45

2.3

5.21010 20

8128113

9.33713

4.3 13

2.2

9.6

32

32 72

52

pF

Ω

ns

nC

2

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FDMS7600AS Dual N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

0.8

V

= 0 V, IS = 12 A (Note 2)

V

SD

t

rr

Q

rr

Notes:

1: R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad o n a 1. 5 x 1.5 in. board of FR-4 material. R

θJA

by the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

a. 57 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

c. 125 °C/W when mounted on a minimum pad of 2 oz copper

GS

V

= 0 V, IS = 20 A (Note 2)Q1Q2

GS

Q1 I

= 12 A, di/dt = 100 A/µs

F

Q2 I

= 20 A, di/dt = 300 A/µs

F

Q1 Q2

is guaranteed by design while R

θJC

b. 50 °C/W when mounted on a 1 in

d. 120 °C/W when mounted on a minimum pad of 2 oz copper

2

pad of 2 oz copper

0.7 274743

108018

128

1.2

75

is determined

θCA

V

ns

nC

®

MOSFET

2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

3

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FDMS7600AS Dual N-Channel PowerTrench

Typical Characteristics (Q1 N-Channel) T

40

30

20

10

, DRAIN CURRENT (A)

D

I

0

VGS = 3.5 V

0.0 0.5 1.0 1.5 2.0

Figure 1.

1.6

ID = 12 A V

= 10 V

GS

1.4

1.2

NORMALIZED

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.8

-75 -50 -25 0 25 50 75 100 125 150

T

Fi g u r e 3. No r m alized O n Resist a n ce

vs Junction Temperature

VGS = 10 V

V

= 6

V

GS

VGS = 4.5 V

VGS = 4 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

V

,

DRAIN TO SOURCE VOLTAGE (V)

DS

On Region Characteristics Figure 2.

, JUNCTION TEMPERATURE (

J

o

C)

= 25 °C unless otherwise noted

J

4

3

VGS = 3.5 V

2

NORMALIZED

1

DRAIN TO SOURCE ON-RESISTANCE

0

0 10203040

I

,

D

Norm a l i z e d O n - R e sistance

vs Drain Current and Gate Voltage

40

)

Ω

m

(

30

20

DRAIN TO

,

DS(on)

r

10

SOURCE ON-RESISTANCE

0

246810

Figure 4.

TJ = 125 oC

TJ = 25 oC

V

,

GATE TO SOURCE VOLTAGE (V)

GS

On-Res istance vs Gate to

Source Voltage

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

VGS = 4 V

VGS = 6 V

DRAIN CURRENT (A)

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

ID = 12 A

V

GS

= 4.5 V

V

= 10 V

GS

®

MOSFET

40

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

30

V

= 5 V

DS

20

10

, DRAIN CURRENT (A)

D

I

0

1.5 2.0 2.5 3.0 3.5 4.0

TJ = 150 oC

TJ = 25 oC

VGS, GATE TO SOURCE V OLTAGE (V)

Figure 5. Transfer Characteristics

40

V

= 0 V

GS

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

TJ = -55 oC

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150 oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Diode

TJ = 25 oC

TJ = -55 oC

Forward Voltage vs Source Current

4

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Fairchild FDMS7600AS service manual

Specifications and Main Features

Frequently Asked Questions

User Manual