Fairchild FDMS7580 service manual
FDMS7580
N-Channel Power Trench® MOSFET
25 V, 7.5 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology, engineered
for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 7.5 mΩ at VGS = 10 V, ID = 15 A
DS(on)
= 11.1 mΩ at VGS = 4.5 V, ID = 12 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
Control MOSFET for Synchronous Buck Converters
Notebook
Server
Telecomm
High Efficiency DC-DC Switch Mode Power Supplies
December 2009
fast switching speed and body
DS(on),
FDMS7580 N-Channel Power Trench
®
MOSFET
Top
Power 56
D
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 25 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 28
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 60
Single Pulse Avalanche Energy (Note 3) 32 mJ
Power Dissipation TC = 25 °C 27
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Bottom
D
D
D
= 25 °C unless otherwise noted
A
Pin 1
S
S
S
G
= 25 °C 49
C
= 25 °C (Note 1a) 15
A
= 25 °C (Note 1a) 2.5
A
D
5
D
6
D
7
8
D
Thermal Characteristics
G
4
S
3
S
2
S
1
A
W
R
θJC
R
θJA
Thermal Resistance, Junction to Case 4.6
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7580 FDMS7580 Power 56 13 ’’ 12 mm 3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7580 Rev.C
°C/W
1
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FDMS7580 N-Channel Power Trench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current VGS = 20 V, V
ID = 250 µA, referenced to 25 °C 18 mV/°C
= 0 V 1 µA
GS
= 0 V 100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 1.6 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDD = 5 V, ID = 15 A 63 S
ID = 250 µA, referenced to 25 °C -6 mV/°C
VGS = 10 V, ID = 15 A 5.9 7.5
VGS = 10 V, ID = 15 A, TJ = 125 °C 8.3 10.6
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 277 370 pF
Reverse Transfer Capacitance 53 80 pF
VDS = 13 V, VGS = 0 V,
f = 1 MHz
894 1190 pF
Gate Resistance 1.1 2.2 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g(TOT)
gs
gd
Turn-On Delay Time
Rise Time 2.4 10 ns
Turn-Off Delay Time 17 31 ns
VDD = 13 V, ID = 15 A,
VGS = 10 V, R
GEN
= 6 Ω
7.3 15 ns
Fall Time 2.1 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 6.5 10 nC
Total Gate Charge 2.9 nC
VDD = 13 V
ID = 15 A
14 20 nC
Gate to Drain “Miller” Charge 1.6 nC
mΩVGS = 4.5 V, ID = 12 A 8.3 11.1
®
MOSFET
Drain-Source Diode Characteristics
V
= 0 V, IS = 2 A (Note 2) 0.73 1.1
V
SD
t
rr
Q
rr
t
rr
Q
rr
NOTES:
1. R
is determined with the device mo unt ed on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boar d of FR-4 mater ial. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %.
of 32 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 8 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 12 A.
3. E
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7580 Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 5.1 10 nC
Reverse Recovery Time
Reverse Recovery Charge 8.9 18
a. 50 °C/W when mounted on
a 1 in2 pad of 2 oz copper
GS
V
= 0 V, IS = 15 A (Note 2) 0.85 1.2
GS
IF = 15 A, di/dt = 100 A/µs
IF = 15 A, di/dt = 300 A/µs
2
19 34 ns
15 27 ns
is guaranteed by design while R
θJC
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
V
is determined by
θCA
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FDMS7580 N-Channel Power Trench
Typical Characteristics T
60
50
40
30
20
DRAIN CURRENT (A)
,
D
I
10
0
Figure 1.
1.6
1.5
1.4
1.3
1.2
1.1
1.0
NORMALIZED
0.9
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.7
Fi gure 3 . N or ma lized On - R esistan ce
VGS = 4.5 V
VGS = 10 V
VGS = 4.0 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
012345
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
On-Region Characteristics Figure 2.
ID = 15 A
= 10 V
V
GS
-75 -50 -25 0 25 50 75 100 125 150
T
,
JUNCTION TEMPERATUR E
J
vs Junction Temperature
= 25 °C unless otherwise noted
J
VGS = 3.5 V
VGS = 3.0 V
o
(
C
)
10
VGS = 3.0 V
8
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
6
4
NORMALIZED
VGS = 4.0 V
2
DRAIN TO SOURCE ON-RESISTANCE
0
0 102030405060
VGS = 4.5 V
I
,
DRAIN CURRENT (A)
D
VGS = 10 V
Norma liz ed On- Re sis ta nce
vs Drain Current and Gate Voltage
40
)
Ω
m
(
30
20
DRAIN TO
,
DS(on)
r
10
SOURCE ON-RESISTANCE
0
246810
Figure 4.
ID = 15 A
V
,
GATE TO S OURCE VOLTAGE (V)
GS
On-Resistance vs Gate to
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
TJ = 125 oC
TJ = 25 oC
Source Voltage
®
MOSFET
60
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
FDMS7580 Rev.C
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
V
= 5 V
DS
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
0
12345
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
V
= 0 V
GS
10
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0 .2 0.4 0.6 0.8 1.0 1.2
TJ = 150 oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Sou rce to Dr ain Diode
TJ = 25 oC
TJ = -55 oC
Forward Voltage vs Source Current
3
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