Fairchild FDMS7578 service manual

FDMS7578

N-Channel Power Trench® MOSFET

25 V, 5.8 mΩ

Features

 Max r  Max r  Advanced Package and Silicon combination for low r

and high efficiency

 Next generation enhanced body diode technology, engineered

for soft recovery

 MSL1 robust package design  100% UIL tested  RoHS Compliant

= 5.8 mΩ at VGS = 10 V, ID = 17 A

DS(on)

= 8 mΩ at VGS = 4.5 V, ID = 14 A

DS(on)

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r diode reverse recovery performance.

Applications

 Control MOSFET for Synchronous Buck Converters  Notebook  Server  Telecomm  High Efficiency DC-DC Switch Mode Power Supplies

December 2009

fast switching speed and body

DS(on),

FDMS7578 N-Channel Power Trench

MOSFET

Top

Power 56

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 25 V Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 28

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 60 Single Pulse Avalanche Energy (Note 3) 40 mJ Power Dissipation TC = 25 °C 33 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

Bottom

= 25 °C unless otherwise noted

Pin 1

= 25 °C 63

= 25 °C (Note 1a) 17

= 25 °C (Note 1a) 2.5

Thermal Characteristics

θJC

θJA

Thermal Resistance, Junction to Case 3.7 Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS7578 FDMS7578 Power 56 13 ’’ 12 mm 3000 units

°C/W

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FDMS7578 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

DSS

∆BV

DSS

∆T

DSS

GSS

On Characteristics

GS(th)

∆V

GS(th)

∆T

DS(on)

Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 25 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 20 V, V Gate to Source Leakage Current,Forward VGS = 20 V, V

ID = 250 µA, referenced to 25 °C 20 mV/°C

= 0 V 1 µA

= 0 V 100 nA

Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 1.6 3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 5 V, ID = 17 A 77 S

ID = 250 µA, referenced to 25 °C -6 mV/°C VGS = 10 V, ID = 17 A 4.6 5.8

VGS = 10 V, ID = 17 A, TJ = 125 °C 6.7 8.5

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 371 495 pF Reverse Transfer Capacitance 54 85 pF

VDS = 13 V, VGS = 0 V, f = 1 MHz

1221 1625 pF

Gate Resistance 1.2 2.4 Ω

Switching Characteristics

d(on)

d(off)

Q Q

g(TOT)

gs gd

Turn-On Delay Time Rise Time 2.6 10 ns Turn-Off Delay Time 20 33 ns

VDD = 13 V, ID = 17 A, VGS = 10 V, R

GEN

= 6 Ω

8 17 ns

Fall Time 2.2 10 ns Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 4.5 V 8 11 nC Total Gate Charge 3.7 nC

VDD = 13 V ID = 17 A

18 25 nC

Gate to Drain “Miller” Charge 1.7 nC

mΩVGS = 4.5 V, ID = 14 A 6.3 8

MOSFET

Drain-Source Diode Characteristics

= 0 V, IS = 2 A (Note 2) 0.72 1.1

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %.

3. E

of 40 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 9 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 14 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

FDMS7578 Rev.C

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 6 12 nC Reverse Recovery Time Reverse Recovery Charge 13 24 nC

a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper

= 0 V, IS = 17 A (Note 2) 0.83 1.2

IF = 17 A, di/dt = 100 A/µs

IF = 17 A, di/dt = 300 A/µs

20 32 ns

19 34 ns

is guaranteed by design while R

θJC

b.125 °C/W when mounted on a minimum pad of 2 oz copper

is determined by

θCA

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FDMS7578 N-Channel Power Trench

Typical Characteristics T

DRAIN CURRENT (A)

012345

Figure 1.

1.6

1.5

1.4

1.3

1.2

1.1

1.0

NORMALIZED

0.9

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.7

-75 -50 -25 0 25 50 75 100 125 150

Fi gure 3. Norma li ze d O n- Re si stance

VGS = 10 V

VGS = 4.5 V

VGS = 3.5 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics Figure 2.

ID = 17 A

= 10 V

JUNCTION TEMPERATUR E

vs Junction Temperature

= 25 °C unless otherwise noted

VGS = 3 V

VGS = 2.5 V

(

)

VGS = 2.5 V

VGS = 3 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

NORMALIZED

VGS = 3.5 V

DRAIN TO SOURCE ON-RESISTA NC E

0 15304560

DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 10 V

Norma li zed On -R esist an ce

vs Drain Current and Gate Voltage

)

Ω

(

DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

246810

Figure 4.

ID = 17 A

, GATE TO S OURCE VOLTAG E ( V )

On-Resistance vs Gat e to

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

TJ = 125 oC

TJ = 25 oC

Source Voltage

MOSFET

, DRAIN CURRENT (A)

FDMS7578 Rev.C

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

= 5 V

TJ = 150 oC

TJ = 25 oC

TJ = -55 oC

1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS, GATE TO SOURCE V OLTAGE (V)

Figure 5. Transfer Characteristics

= 0 V

TJ = 150 oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Sou rce to Drain Diode

TJ = 25 oC

TJ = -55 oC

Forward Voltage vs Source Current

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