Fairchild FDMS7572S service manual
FDMS7572S
DS(on)
TM
General Description
The FDMS7572S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
while maintaining excellent switching performance. This
DS(on)
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for Synchronous Buck Converters
Notebook
Server
Telecom
High Efficiency DC-DC Switch Mode Power Supplies
N-Channel PowerTrench® SyncFET
25 V, 49 A, 2.9 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 2.9 mΩ at VGS = 10 V, ID = 23 A
DS(on)
= 4.2 mΩ at VGS = 4.5 V, ID = 18 A
DS(on)
FDMS7572S N-Channel PowerTrench
January 2010
®
SyncFET
Top
Power 56
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 25 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 49
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 150
Single Pulse Avalanche Energy (Note 3) 84 mJ
Power Dissipation TC = 25 °C 46
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
D
C
Bottom
D
D
D
= 25 °C unless otherwise noted
Pin 1
S
S
S
G
= 25 °C 105
C
= 25 °C (Note 1a) 23
A
= 25 °C (Note 1a) 2.5
A
D
5
D
6
D
7
D
8
4
3
2
1
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 2.3
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
G
S
S
S
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7572S FDMS7572S Power 56 13 ’’ 12 mm 3000 units
©2010 Fairchild Semiconductor Corporation
FDMS7572S Rev.C
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FDMS7572S N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
(Note 2)
I
= 10 mA, referenced to 25 °C 19 mV/°C
D
= 0 V 500 µA
GS
= 0 V 100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.7 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 10 mA, referenced to 25 °C -5 mV/°C
D
V
= 10 V, ID = 23 A 2.4 2.9
GS
= 4.5 V, ID = 18 A 3.4 4.2
GS
= 10 V, ID = 23 A, TJ = 125 °C 3.5 4.3
V
GS
Forward Transconductance VDS = 5 V, ID = 23 A 159 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 577 770 pF
Reverse Transfer Capacitance 128 195 pF
Gate Resistance 1.1 2.4 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 410ns
Turn-Off Delay Time 27 43 ns
Fall Time 310ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 15 21 nC
Gate to Source Gate Charge 6.3 nC
Gate to Drain “Miller” Charge 4.0 nC
= 13 V, VGS = 0 V,
V
DS
f = 1 MHz
= 13 V, ID = 23 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
V
DD
I
= 23 A
D
= 13 V,
2090 2780 pF
10 20 ns
32 45 nC
mΩV
®
SyncFET
Drain-Source Diode Characteristics
V
= 0 V, IS = 2 A (Note 2) 0.48 0.8
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device moun ted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 materi al. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 17 31 nC
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. EAS of 84 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 13 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 20 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7572S Rev.C
GS
= 0 V, IS = 23 A (Note 2) 0.79 1.2
V
GS
= 23 A, di/dt = 300 A/ µs
I
F
2
23 36 ns
is guaranteed by design while R
θJC
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
V
is determined by
θCA
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FDMS7572S N-Channel PowerTrench
Typical Characteristics T
150
120
90
60
DRAIN CURRENT (A)
,
30
D
I
0
012345
Figure 1.
VGS = 3.5 V
VGS = 4.5 V
VGS = 10 V
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
On Region Characteristics Figure 2.
1.5
ID = 23 A
1.4
= 10 V
V
GS
1.3
1.2
1.1
NORMALIZED
1.0
0.9
DRAIN TO SOURCE ON-RESISTANCE
0.8
-75 -50 -25 0 25 50 75 100 125 150
T
,
JUNCTION TEMPERATURE
J
Fi gure 3 . No r mali zed O n Res i sta n ce
vs Junction Temperature
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
= 25 °C unless otherwise noted
J
VGS = 3 V
VGS = 2.5 V
o
(
C
)
10
VGS = 2.5 V
8
6
4
NORMALIZED
2
DRAIN TO SOURCE ON-RESISTANCE
0
0 30 60 90 120 150
I
D
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
VGS = 3.5 V
VGS = 4.5 V
VGS = 10 V
, DRAIN CURRENT (A)
Nor m a l i z e d On-Resis t a n c e
vs Drain Current and Gate Voltage
10
)
Ω
m
8
(
ID = 23 A
6
DRAIN TO
,
4
DS(on)
r
2
SOURCE ON-RESISTANCE
0
246810
V
,
GATE TO SOURCE VOLTAGE (V)
GS
Figure 4.
On-Re sistance v s Gate to
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% M AX
TJ = 125 oC
TJ = 25 oC
Source Voltage
®
SyncFET
150
120
90
60
, DRAIN CURRENT (A)
30
D
I
0
FDMS7572S Rev.C
PULSE DURA TION = 80 µs
DUTY CYCLE = 0.5% MAX
V
= 5 V
DS
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
200
100
V
= 0 V
GS
10
TJ = 125 oC
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
TJ = 25 oC
TJ = -55 oC
Sou rce to Drain Diode
Forward Voltage vs Source Current
3
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