Fairchild FDMS7560S service manual
FDMS7560S
4
3
2
1
5
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7
8
Power 56
D
D
D
D
S
S
S
G
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
N-Channel PowerTrench® SyncFETTM
25 V, 49 A, 1.45 mΩ
FDMS7560S N-Channel PowerTrench
August 2011
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 1.45 mΩ at VGS = 10 V, ID = 30 A
DS(on)
= 2.1 mΩ at VGS = 4.5 V, ID = 26 A
DS(on)
DS(on)
General Description
The FDMS7560S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
while maintaining excellent switching performance. This
DS(on)
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for Synchronous Buck Converters
Notebook
Server
Telecom
High Efficiency DC-DC Switch Mode Power Supplies
®
SyncFET
TM
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 25 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 49
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 180
Single Pulse Avalanche Energy (Note 3) 220 mJ
Power Dissipation TC = 25 °C 89
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
C
= 25 °C 181
C
= 25 °C (Note 1a) 30
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.4
Thermal Resistance, Junction to Ambient (Note 1a) 50
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
©2011 Fairchild Semiconductor Corporation
FDMS7560S Rev.C1
FDMS7560S FDMS7560S Power 56 13 ’’ 12 mm 3000 units
1
www.fairchildsemi.com
FDMS7560S N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
ΔV
GS(th)
ΔT
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
I
= 10 mA, referenced to 25 °C 21 mV/°C
D
= 0 V 500 μA
GS
= 0 V 100 nA
DS
(Note 2)
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.7 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = 5 V, ID = 30 A 171 S
I
= 10 mA, referenced to 25 °C -5 mV/°C
D
V
= 10 V, ID = 30 A 1.2 1.45
GS
= 4.5 V, ID = 26 A 1.6 2.1
GS
= 10 V, ID = 30 A, TJ = 125 °C 1.6 2.0
V
GS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1200 1560 pF
Reverse Transfer Capacitance 244 370 pF
= 13 V, VGS = 0 V,
V
DS
f = 1 MHz
4470 5945 pF
Gate Resistance 0.8 1.8 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 7.4 15 ns
Turn-Off Delay Time 41 66 ns
= 13 V, ID = 30 A,
V
DD
= 10 V, R
V
GS
GEN
= 6 Ω
16 29 ns
Fall Time 4.8 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 30 43 nC
Gate to Source Gate Charge 13.4 nC
V
DD
= 30 A
I
D
= 13 V,
66 93 nC
Gate to Drain “Miller” Charge 7.5 nC
mΩV
®
SyncFET
TM
Drain-Source Diode Characteristics
V
= 0 V, IS = 2 A (Note 2) 0.40 0.7
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 39 63 nC
a. 50 °C/W when mounted on a
2
1 in
pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E
of 220 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 21 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 32 A.
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7560S Rev.C1
GS
= 0 V, IS = 30 A (Note 2) 0.76 1.2
V
GS
IF = 30 A, di/dt = 300 A/μs
2
35 56 ns
is guaranteed by design while R
θJC
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
V
is determined by
θCA
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FDMS7560S N-Channel PowerTrench
012345
0
30
60
90
120
150
180
VGS = 3.5 V
VGS = 10 V
VGS = 3 V
VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 30 60 90 120 150 180
0
2
4
6
8
10
12
VGS = 2.5 V
VGS = 4.5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
VGS = 10 V
VGS = 3.5 V
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
-75 -50 -25 0 25 50 75 100 125 150
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
ID = 30 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
1
2
3
4
5
6
TJ = 125 oC
ID = 30 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
30
60
90
120
150
180
TJ = 125 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100
180
TJ = -55 oC
TJ = 25 oC
TJ = 125 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
®
SyncFET
TM
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
FDMS7560S Rev.C1
Figure 5. Transfer Characteristics
Figure 4.
O n - R es i s t a n c e vs G a t e t o
Source Voltage
Figure 6.
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
3
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