Fairchild FDMS7558S service manual
FDMS7558S
DS(on)
TM
General Description
The FDMS7558S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
while maintaining excellent switching performance. This
DS(on)
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for Synchronous Buck Converters
Notebook
Server
Telecom
High Efficiency DC-DC Switch Mode Power Supplies
N-Channel PowerTrench® SyncFET
25 V, 49 A, 1.25 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 1.25 mΩ at VGS = 10 V, ID = 32 A
DS(on)
= 1.75 mΩ at VGS = 4.5 V, ID = 28 A
DS(on)
FDMS7558S N-Channel PowerTrench
December 2009
®
SyncFET
Top
Power 56
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 25 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 49
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 180
Single Pulse Avalanche Energy (Note 3) 288 mJ
Power Dissipation TC = 25 °C 89
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
D
C
Bottom
D
D
D
= 25 °C unless otherwise noted
Pin 1
S
S
S
G
= 25 °C 199
C
= 25 °C (Note 1a) 32
A
= 25 °C (Note 1a) 2.5
A
D
5
D
6
D
7
D
8
4
3
2
1
Thermal Characteristics
G
S
S
S
A
W
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.4
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7558S FDMS7558S Power 56 13 ’’ 12 mm 3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7558S Rev.C
°C/W
1
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FDMS7558S N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
(Note 2)
I
= 10 mA, referenced to 25 °C 21 mV/°C
D
= 0 V 500 µA
GS
= 0 V 100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.6 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 10 mA, referenced to 25 °C -5 mV/°C
D
V
= 10 V, ID = 32 A 1.0 1.25
GS
= 4.5 V, ID = 28 A 1.4 1.75
GS
= 10 V, ID = 32 A, TJ = 125 °C 1.4 1.8
V
GS
Forward Transconductance VDS = 5 V, ID = 32 A 221 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1615 2150 pF
Reverse Transfer Capacitance 317 475 pF
Gate Resistance 0.5 1.0 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 918ns
Turn-Off Delay Time 44 70 ns
Fall Time 510ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 39 55 nC
Gate to Source Gate Charge 16.5 nC
Gate to Drain “Miller” Charge 9.7 nC
= 13 V, VGS = 0 V,
V
DS
f = 1 MHz
= 13 V, ID = 32 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
V
DD
I
= 32 A
D
= 13 V,
5843 7770 pF
18 33 ns
85 119 nC
mΩV
®
SyncFET
Drain-Source Diode Characteristics
V
= 0 V, IS = 2 A (Note 2) 0.38 0.7
V
SD
t
rr
Q
rr
Notes:
is determined with the device mounted on a 1i n2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
1. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 52 84 nC
a. 50 °C/W when mounted on a
2
1 in
pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
of 288 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 24 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 35 A.
3. E
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7558S Rev.C
GS
= 0 V, IS = 32 A (Note 2) 0.75 1.2
V
GS
= 32 A, di/dt = 300 A/µs
I
F
2
39 63 ns
is guaranteed by design while R
θJC
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
V
is determined by
θCA
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FDMS7558S N-Channel PowerTrench
Typical Characteristics T
180
VGS = 10 V
150
VGS = 4.5 V
120
VGS = 3.5 V
90
60
, DRAIN CURRENT (A)
D
30
I
0
012345
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1.
On Region Characteristics Figure 2.
1.5
ID = 32 A
1.4
V
GS
= 10 V
1.3
1.2
1.1
1.0
NORMALIZED
0.9
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.7
-75 -50 -25 0 25 50 75 100 125 150
T
,
JUNCTION TEMPERATURE
J
Fi gure 3 . No r mali zed O n Res i sta n ce
vs Junction Temperature
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
= 25 °C unless otherwise noted
J
VGS = 3 V
VGS =
2.5 V
o
(
C
)
20
VGS = 2.5 V
16
VGS = 3 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
12
8
NORMALIZED
4
DRAIN TO SOURCE ON-RESISTANCE
0
0 30 60 90 120 150 180
VGS = 3.5 V
I
,
DRAIN CURRENT (A)
D
VGS = 4.5 V
V
= 10 V
GS
Nor m a l i z e d On-Resis t a n c e
vs Drain Current and Gate Voltage
5
)
Ω
m
4
(
3
DRAIN TO
,
2
DS(on)
r
1
SOURCE ON-RESISTANCE
0
246810
V
GS
Figure 4.
On-Re sistance v s Gate to
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
ID = 32 A
TJ = 125 oC
TJ = 25 oC
,
GATE TO SOURCE VOLTAGE (V)
Source Voltage
®
SyncFET
180
150
120
90
60
, DRAIN CURRENT (A)
D
I
30
0
FDMS7558S Rev.C
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
V
= 5 V
DS
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
1.5 2.0 2.5 3.0 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
200
100
V
= 0 V
GS
10
1
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
0.1
, REVERSE DRAIN CURRENT (A)
S
I
0.01
0.00.20.40.60.81.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Sou rce to Drain Diode
Forward Voltage vs Source Current
3
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