Fairchild FDMS7556S service manual

FDMS7556S

4 3 2 1

5 6 7 8

Power 56

D D

Pin 1

Bottom

Top

DS(on)

General Description

The FDMS7556S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest r

while maintaining excellent switching performance. This

DS(on)

device has the added benefit of an efficient monolithic Schottky body diode.

Applications

 Synchronous Rectifier for Synchronous Buck Converters  Notebook  Server  Telecom

 High Efficiency DC-DC Switch Mode Power Supplies

N-Channel PowerTrench® SyncFET

25 V, 49 A, 1.2 mΩ Features

 Max r  Max r  Advanced Package and Silicon combination for low r

and high efficiency

 SyncFET Schottky Body Diode  MSL1 robust package design  100% UIL tested  RoHS Compliant

= 1.2 mΩ at VGS = 10 V, ID = 35 A

DS(on)

= 1.65 mΩ at VGS = 4.5 V, ID = 31 A

DS(on)

FDMS7556S N-Channel Power Trench

September 2010

SyncFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 25 V Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200 Single Pulse Avalanche Energy (Note 3) 312 mJ Power Dissipation TC = 25 °C 96 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C 222

= 25 °C (Note 1a) 35

= 25 °C (Note 1a) 2.5

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS7556S FDMS7556S Power 56 13 ’’ 12 mm 3000 units

Thermal Resistance, Junction to Case 1.3 Thermal Resistance, Junction to Ambient (Note 1a) 50

°C/W

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FDMS7556S N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 20 V, V Gate to Source Leakage Current, Forward VGS = 20 V, V

= 10 mA, referenced to 25 °C 22 mV/°C

= 0 V 500 μA

= 0 V 100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.6 3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 10 mA, referenced to 25 °C -5 mV/°C

= 10 V, ID = 35 A 0.95 1.2

= 4.5 V, ID = 31 A 1.3 1.65

= 10 V, ID = 35 A, TJ = 125 °C 1.2 1.6

Forward Transconductance VDS = 5 V, ID = 35 A 212 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 1940 2580 pF Reverse Transfer Capacitance 314 475 pF

= 13 V, VGS = 0 V,

f = 1 MHz

6740 8965 pF

Gate Resistance 0.6 1.3 Ω

Switching Characteristics

d(on)

d(off)

Q Q Q Q

Turn-On Delay Time Rise Time 9 18 ns Turn-Off Delay Time 48 77 ns

= 13 V, ID = 35 A,

= 10 V, R

GEN

= 6 Ω

Fall Time 5.3 11 ns

g g gs gd

Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 4.5 V 43 60 nC Gate to Source Gate Charge 18.6 nC

= 35 A

= 13 V

Gate to Drain “Miller” Charge 8.8 nC

20 36 ns

95 133 nC

mΩV

SyncFET

Drain-Source Diode Characteristics

= 0 V, IS = 2 A (Note 2) 0.37 0.7

Notes:

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board o f FR-4 materi al. R

1. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 68 109 nC

a. 50 °C/W when mounted on a

pad of 2 oz copper.

1 in

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. E

of 312 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 25 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 38 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

FDMS7556S Rev.C1

= 0 V, IS = 35 A (Note 2) 0.74 1.2

= 35 A, di/dt = 300 A/μs

44 71 ns

is guaranteed by design while R

θJC

b. 125 °C/W when mounted on a minimum pad of 2 oz copper.

is determined by

θCA

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FDMS7556S N-Channel Power Trench

0 0.5 1.0 1.5 2.0

120

160

200

VGS = 3.5 V

VGS = 4.5 V

VGS = 10 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 2.5 V

VGS = 3 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

0 40 80 120 160 200

VGS = 4.5 V

VGS = 2.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

= 3 V

VGS = 3.5 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

ID = 35 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTION TEMPERATURE (

246810

TJ = 125 oC

ID = 35 A

TJ = 25 oC

, GATE TO SOURCE VOLTAGE (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

1.0 1.5 2.0 2.5 3.0 3.5

120

160

200

TJ = 125 oC

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0

0.01

0.1

100

200

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics

= 25 °C unless otherwise noted

Figure 2.

Norma l i z e d O n - Resistanc e

vs Drain Current and Gate Voltage

SyncFET

Figu r e 3. Nor m a lized O n - Resis t a nce

vs Junction Temperature

FDMS7556S Rev.C1

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate t o

Source Voltage

Figure 6.

Source to Drain Dio de

Forward Voltage vs Source Current

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