Fairchild FDMS6681Z service manual

FDMS6681Z

P-Channel PowerTrench® MOSFET

-30 V, -49 A, 3.2 m:
Features

 Max r

 Max r

 Advanced Package and Silicon combination

for low r

 HBM ESD protection level of 8kV typical(note 3)

 MSL1 robust package design

 RoHS Compliant

= 3.2 m: at VGS = -10 V, ID = -21.1 A

DS(on)

= 5.0 m: at VGS = -4.5 V, ID = -15.7 A

DS(on)

DS(on)

May 2009

General Description

The FDMS6681Z has been designed to minimize losses in load
switch applications. Advancements in both silicon and package
technologies have been combined to offer the lowest r
ESD protection.

DS(on)

and

Applications

 Load Switch in Notebook and Server

 Notebook Battery Pack Power Management

FDMS6681Z P-Channel PowerTrench

®

MOSFET

Top

D

Bottom

D

D

D

Pin 1

S

S

S

G

5

D

D

6

D

7

D

8

4

3

2

1

Power 56

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage -30 V

Gate to Source Voltage ±25 V

Drain Current -Continuous (Package limited) TC= 25 °C -49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed -90

Power Dissipation TC = 25 °C 73

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C -116

C

= 25 °C (Note 1a) -21.1

A

= 25 °C (Note 1a) 2.5

A

Thermal Characteristics

G

S

S

S

A

W

R

TJC

R

TJA

Thermal Resistance, Junction to Case 1.7

Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS6681Z FDMS6681Z Power 56 13 ’’ 12 mm 3000 units

©2009 Fairchild Semiconductor Corporation
FDMS6681Z Rev.C4

°C/W

1

www.fairchildsemi.com

FDMS6681Z P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV
'T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = -250 PA, VGS = 0 V -30 V

Breakdown Voltage Temperature
Coefficient

I

= -250 PA, referenced to 25 °C 20 mV/°C

D

Zero Gate Voltage Drain Current VDS = -24 V, VGS= 0 V -1 PA

Gate to Source Leakage Current VGS = ±25 V, VDS= 0 V ±10 PA

On Characteristics

V

GS(th)

'V
'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = -250 PA-1-1.7-3V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

I

= -250 PA, referenced to 25 °C -7 mV/°C

D

V

= -10 V, ID = -22.1 A 2.7 3.2

GS

= -4.5 V, ID = -15.7 A 4.0 5.0

GS

= -10 V, ID = -22.1 A, TJ = 125 °C 3.9 5.0

V

GS

Forward Transconductance VDD = -10 V, ID = -22.1 A 143 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance 1540 2050 pF

Reverse Transfer Capacitance 1345 2020 pF

= -15 V, VGS = 0 V,

V

DS

f = 1 MHz

7803 10380 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

g

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 38 61 ns

Turn-Off Delay Time 260 416 ns

= -15 V, ID = -22.1 A,

V

DD

V

= -10 V, R

GS

GEN

= 6 :

Fall Time 197 316 ns

Total Gate Charge VGS= 0 V to -10 V

Total Gate Charge VGS= 0 V to -5 V 97 136 nC

Gate to Source Charge 22 nC

= -15 V,

V

DD

I

= -22.1 A

D

Gate to Drain “Miller” Charge 46 nC

15 24 ns

172 241 nC

m:V

®

MOSFET

Drain-Source Diode Characteristics

V

= 0 V, IS= -2.1 A (Note 2) 0.68 1.2 V

V

SD

t

rr

Q

rr

NOTES:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

TJA

the user's board design.

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.

3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.

FDMS6681Z Rev.C4

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 39 63 nC

a. 50 °C/W when mounted on

2

a 1 in

pad of 2 oz copper.

GS

= 0 V, IS= -22.1 A (Note 2) 0.79 1.25 V

V

GS

= -22.1 A, di/dt = 100 A/Ps

I

F

2©2009 Fairchild Semiconductor Corporation

44 71 ns

is guaranteed by design while R

TJC

b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.

is determined by

TCA

www.fairchildsemi.com

FDMS6681Z P-Channel PowerTrench

Typical Characteristics T

90

75

60

45

DRAIN CURRENT (A)

30

,

D

-I

15

0

0123

Figure 1.

1.6

1.4

PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX

-V

,

DRAIN TO SOURCE VOLTAGE (V)

DS

On Region Characteristics

ID = -22.1 A
V

= -10 V

GS

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

,

JUNCTION TEMPERATURE

J

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

vs Junction Temperature

VGS = -3.5 V

VGS = -4 V

VGS = -4.5 V

VGS = -10V

= 25 °C unless otherwise noted

J

VGS = -3 V

o

(

C

)

5

PULSE DURATION = 80 Ps

VGS = -3 V

4

DUTY CYCLE = 0.5%MAX

VGS = -3.5 V

3

VGS= -4 V

NORMALIZED

V

= -4.5 V

2

GS

1

V

=-10 V

DRAIN TO SOURCE ON-RESISTANCE

0

0 153045607590

-I

,

DRAIN CURRENT (A)

D

Figure 2.

N o r m a l i z e d O n - R e s i s t a n c e

GS

vs Drain Current and Gate Voltage

12

)

:

m

(

9

6

DRAIN TO

,

DS(on)

r

3

SOURCE ON-RESISTANCE

0

246810

-V

,

GATE TO SOURCE VOLTAGE (V)

GS

Figure 4.

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX

ID= -22.1 A

TJ= 125 oC

TJ= 25 oC

Source Voltage

®

MOSFET

90

75

60

45

30

, DRAIN CURRENT (A)

D

-I

15

FDMS6681Z Rev.C

PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX

VDS= -5 V

TJ = 150 oC

TJ = 25 oC

TJ = -55 oC

0

01234

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

4

100

VGS= 0 V

10

TJ= 150 oC

1

0.1

TJ = 25 oC

0.01

, REVERSE DRAIN CURRENT (A)

S

-I

0.001
0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n D io d e

TJ = -55 oC

Forward Voltage vs Source Current

3©2009 Fairchild Semiconductor Corporation

www.fairchildsemi.com