Fairchild FDMS6681Z service manual

Download

FDMS6681Z

P-Channel PowerTrench® MOSFET

-30 V, -49 A, 3.2 m: Features

 Max r

 Advanced Package and Silicon combination

for low r

 HBM ESD protection level of 8kV typical(note 3)

 MSL1 robust package design

 RoHS Compliant

= 3.2 m: at VGS = -10 V, ID = -21.1 A

DS(on)

= 5.0 m: at VGS = -4.5 V, ID = -15.7 A

DS(on)

May 2009

General Description

The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest r ESD protection.

DS(on)

and

Applications

 Load Switch in Notebook and Server

 Notebook Battery Pack Power Management

FDMS6681Z P-Channel PowerTrench

MOSFET

Top

Bottom

Pin 1

Power 56

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage -30 V

Gate to Source Voltage ±25 V

Drain Current -Continuous (Package limited) TC= 25 °C -49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed -90

Power Dissipation TC = 25 °C 73

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C -116

= 25 °C (Note 1a) -21.1

= 25 °C (Note 1a) 2.5

Thermal Characteristics

TJC

TJA

Thermal Resistance, Junction to Case 1.7

Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS6681Z FDMS6681Z Power 56 13 ’’ 12 mm 3000 units

°C/W

www.fairchildsemi.com

FDMS6681Z P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

'BV 'T

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = -250 PA, VGS = 0 V -30 V

Breakdown Voltage Temperature Coefficient

= -250 PA, referenced to 25 °C 20 mV/°C

Zero Gate Voltage Drain Current VDS = -24 V, VGS= 0 V -1 PA

Gate to Source Leakage Current VGS = ±25 V, VDS= 0 V ±10 PA

On Characteristics

GS(th)

'V 'T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = -250 PA-1-1.7-3V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

= -250 PA, referenced to 25 °C -7 mV/°C

= -10 V, ID = -22.1 A 2.7 3.2

= -4.5 V, ID = -15.7 A 4.0 5.0

= -10 V, ID = -22.1 A, TJ = 125 °C 3.9 5.0

Forward Transconductance VDD = -10 V, ID = -22.1 A 143 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance 1540 2050 pF

Reverse Transfer Capacitance 1345 2020 pF

= -15 V, VGS = 0 V,

f = 1 MHz

7803 10380 pF

Switching Characteristics

d(on)

d(off)

Turn-On Delay Time

Rise Time 38 61 ns

Turn-Off Delay Time 260 416 ns

= -15 V, ID = -22.1 A,

= -10 V, R

GEN

= 6 :

Fall Time 197 316 ns

Total Gate Charge VGS= 0 V to -10 V

Total Gate Charge VGS= 0 V to -5 V 97 136 nC

Gate to Source Charge 22 nC

= -15 V,

= -22.1 A

Gate to Drain “Miller” Charge 46 nC

15 24 ns

172 241 nC

m:V

MOSFET

Drain-Source Diode Characteristics

= 0 V, IS= -2.1 A (Note 2) 0.68 1.2 V

NOTES:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

TJA

the user's board design.

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.

3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.

FDMS6681Z Rev.C4

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 39 63 nC

a. 50 °C/W when mounted on

a 1 in

pad of 2 oz copper.

= 0 V, IS= -22.1 A (Note 2) 0.79 1.25 V

= -22.1 A, di/dt = 100 A/Ps

44 71 ns

is guaranteed by design while R

TJC

b. 125 °C/W when mounted on a minimum pad of 2 oz copper.

is determined by

TCA

www.fairchildsemi.com

FDMS6681Z P-Channel PowerTrench

Typical Characteristics T

DRAIN CURRENT (A)

-I

0123

Figure 1.

1.6

1.4

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

-V

DRAIN TO SOURCE VOLTAGE (V)

On Region Characteristics

ID = -22.1 A V

= -10 V

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

JUNCTION TEMPERATURE

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

vs Junction Temperature

VGS = -3.5 V

VGS = -4 V

VGS = -4.5 V

VGS = -10V

= 25 °C unless otherwise noted

VGS = -3 V

(

)

PULSE DURATION = 80 Ps

VGS = -3 V

DUTY CYCLE = 0.5%MAX

VGS = -3.5 V

VGS= -4 V

NORMALIZED

= -4.5 V

=-10 V

DRAIN TO SOURCE ON-RESISTANCE

0 153045607590

-I

DRAIN CURRENT (A)

Figure 2.

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

)

(

DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

246810

-V

GATE TO SOURCE VOLTAGE (V)

Figure 4.

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

ID= -22.1 A

TJ= 125 oC

TJ= 25 oC

Source Voltage

MOSFET

, DRAIN CURRENT (A)

-I

FDMS6681Z Rev.C

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

VDS= -5 V

TJ = 150 oC

TJ = 25 oC

TJ = -55 oC

01234

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

100

VGS= 0 V

TJ= 150 oC

0.1

TJ = 25 oC

0.01

, REVERSE DRAIN CURRENT (A)

-I

0.001 0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n D io d e

TJ = -55 oC

Forward Voltage vs Source Current

www.fairchildsemi.com

FDMS6681Z P-Channel PowerTrench

Typical Characteristics T

ID= -22.1 A

, GATE TO SOURCE VOLTAGE (V)

-V

0 50 100 150 200

Figure 7.

100

, AVALANCHE CURRENT (A)

-I

0.001 0.01 0.1 1 10 100

Fi gu re 9. Un cl am pe d I nd uct iv e

VDD = -10 V

Qg, GATE CHARGE (nC)

Gate Charge Characteristics

TJ= 25 oC

TJ= 125 oC

tAV, TI ME IN AVALANCHE (ms)

S w i t c h i n g C a p a b i l i t y

= 25 °C unless otherwise noted

VDD = -15 V

= -20 V

TJ= 100 oC

20000

10000

CAPACITANCE (pF)

f = 1 MHz

= 0 V

1000

600

0.1 1 10

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 8.

C a p a c i t a n c e v s D r a i n

to Source Voltage

-4

VGS= 0 V

-5

TJ= 150 oC

-6

-7

-8

GATE LEAKAGE CURRENT (A)

-9

0 5 10 15 20 25 30

Figure 10.

TJ= 25 oC

GATE TO SOURCE VOLTAGE (V)

vs V

gss

iss

oss

rss

MOSFET

100

, DRAIN CURRENT (A)

0.1

-I

0.01

0.01 0.1 1 10 100

FDMS6681Z Rev.C

THIS AREA IS LIMITED BY r

Figure 11.

DS(on)

SINGLE PULSE

= MAX RATED

= 125 oC/W

= 25 oC

-VDS, DRAIN to SOURCE VOLTAGE (V)

F o rw a r d Bi a s S af e

Operating Area

1 ms

10 ms

100 ms

1 s

10 s

1000

VGS = -10 V

100

SINGLE PULSE

= 125 oC/W

= 25 oC

PEAK TRANSIENT POWER (W)

)

(

0.1

0.001 0.01 0.1 1 10 100 1000

t, PULSE WIDTH (sec)

Figure 12.

S i n g l e P u l s e M a x i m u m

Power Dissipation

www.fairchildsemi.com

FDMS6681Z P-Channel PowerTrench

Typical Characteristics T

0.1

IMPEDANCE,

0.01

NORMALIZED THERMAL

0.001

0.001 0.01 0.1 1 10 100 1000

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

Figure 13.

= 25 °C unless otherwise noted

NOTES:

SINGLE PULSE

= 125 oC/W

t, RECTANGULAR PULSE DURATION (sec)

DUTY FACTOR: D = t1/t PEAK TJ = PDM x Z

Junction-to-Ambient Transient Thermal Response Curve

x R

+ T

TJA

MOSFET

FDMS6681Z Rev.C

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDMS6681Z P-Channel PowerTrench

MOSFET

FDMS6681Z Rev.C

www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™ *

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™

SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

™

The Power Franchise

TinyBoost™ TinyBuck™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™*

PSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

®*

XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMS6681Z P-Channel PowerTrench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I40

www.fairchildsemi.com7

Fairchild FDMS6681Z service manual

Specifications and Main Features

Frequently Asked Questions

User Manual