FDMS6673BZ
P-Channel PowerTrench® MOSFET
-30 V, -28 A, 6.8 m:
Features
Max r
Max r
Advanced Package and Silicon combination
for low r
HBM ESD protection level of 8 kV typical(note 3)
MSL1 robust package design
RoHS Compliant
= 6.8 m: at VGS = -10 V, ID = -15.2 A
DS(on)
= 12.5 m: at VGS = -4.5 V, ID = -11.2 A
DS(on)
DS(on)
August 2009
General Description
The FDMS6673BZ has been designed to minimize losses in load
switch applications. Advancements in both silicon and package
technologies have been combined to offer the lowest r
ESD protection.
DS(on)
and
Applications
Load Switch in Notebook and Server
Notebook Battery Pack Power Management
FDMS6673BZ P-Channel PowerTrench
®
MOSFET
Top
D
Bottom
D
D
D
Pin 1
S
S
S
G
5
D
D
6
D
7
D
8
4
3
2
1
Power 56
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage -30 V
Gate to Source Voltage ±25 V
Drain Current -Continuous (Package limited) TC= 25 °C -28
-Continuous (Silicon limited) T
-Continuous T
-Pulsed -120
Power Dissipation TC = 25 °C 73
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
C
= 25 °C -90
C
= 25 °C (Note 1a) -15.2
A
= 25 °C (Note 1a) 2.5
A
Thermal Characteristics
R
TJC
R
TJA
Thermal Resistance, Junction to Case 1.7
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
G
S
S
S
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDMS6673BZ FDMS6673BZ Power 56 13 ’’ 12 mm 3000 units
©2009 Fairchild Semiconductor Corporation
FDMS6673BZ RevC
3
1
www.fairchildsemi.com
FDMS6673BZ P-Channel PowerTrench
Electrical Characteristics T
bol Parameter Test Conditions Min Typ Max Units
Sym
= 25 °C unless otherwise noted
J
Off Characteristics
BV
'BV
'T
I
DSS
I
GSS
DSS
DSS
J
Drain to So
Breakdown Volt
urce Breakdown Voltage I
age Temperature
Coefficient
Zero Gate Voltag
e Drain Current V
Gate to Source Leakage Current
= -250 PA, VGS = 0 V -30
D
= -250 PA, referenc
I
D
= -24 V, VGS= 0 V -1 PA
DS
= ±25 V, VDS= 0 V
V
GS
ed to 25 °C -18 mV/°C
V
On Characteristics
V
GS(th)
'V
'T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold V
Gate to Source Threshold V
Temperature Coefficient
Static Drain to
Forward Transconduct
Dynamic Charac
C
iss
C
oss
C
rss
R
g
Input Capacit
Output Capacitance
Reverse Transfer C
Gate Resistance 4.5 :
Source On Resistance
teristics
ance
apacitance 695 1045 pF
oltage V
oltage
ance V
= VDS, ID = -250 PA -1.0
GS
= -250 PA, referenced to 25
I
D
V
GS
GS
V
GS
DS
V
DS
f = 1 MHz
, I
= -10 V
= -4.5 V
= -15.2 A 5.2
D
, I
= -11.2 A 7.8
D
= -10 V, ID = -15.2 A, TJ= 125 °C 7.5 9.8
= -5 V,
= -15.2 A 76 S
I
D
= -15 V, VGS = 0 V,
°C 7 mV/°C
-1.8 -3.0 V
4444 5915 pF
781 1040 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On De
Rise Time 28
Turn-Of
lay Time
V
= -15 V, ID = -15.2 A,
DD
= -10 V, R
f Delay Time 97 156 ns
V
GS
GEN
= 6 :
Fall Time 79
g
g
gs
gd
Total Gate
Total Gate
Gate to Source Charge
Gate to Drain “Miller” Charge 2
Charge V
Charge V
= 0 V to -10 V
GS
= 0 V to -5 V 52
GS
= -15 V,
V
DD
= -15.2 A
I
D
14 26
93 130
13 nC
6nC
±10
6.8
12.5
m:V
45 ns
127 ns
73 nC
PA
®
MOSFET
ns
nC
Drain-Source Diode Characteristics
V
= 0 V, IS= -2.1 A (Note 2) 0.7
V
SD
t
rr
Q
rr
Notes:
1: R
TJA
the user's board design.
2: Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3: The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
©2009 Fairchild Semiconductor Corporation
FDMS6673BZ RevC
Source to Drain Diode Forward V
Reverse Recovery Time
Reverse Recovery Charge 20
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
3
oltage
a. 50 °C/W when mounted on a
2
1 in
pad of 2 oz copper.
GS
V
= 0 V, IS= -15.2 A (Note 2) 0.8 1.25
GS
= -15.2 A, di/dt = 100 A/Ps
I
F
2
33 53
is guaranteed by design while R
TJC
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
1.20
32 nC
is determined by
TCA
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V
ns
ildsemi.com
FDMS6673BZ P-Channel PowerTrench
Typical Characteristics T
120
100
80
60
40
DRAIN CURRENT (A)
,
D
-I
20
0
01234
-V
Figure 1.
1.6
ID = -15.2 A
= -10 V
V
GS
1.4
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
T
VGS = - 10 V
VGS = - 6 V
VGS = - 4.5 V
VGS = -4 V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
On Region Characteristics Figure 2.
, JUNCTION TEMPERATURE
J
= 25 °C unless otherwise noted
J
VGS = -3.5 V
VGS = -3 V
o
(
C
)
4.0
3.5
VGS = -3 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
3.0
VGS = -3.5 V
VGS = -4 V
2.5
2.0
VGS = -4.5 V
NORMALIZED
1.5
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 20406080100120
-I
,
DRAIN CURRENT (A)
D
VGS = -6 V
V
= -10 V
GS
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
25
)
:
m
20
(
ID= -15.2 A
15
DRAIN TO
,
10
DS(on)
r
5
SOURCE ON-RESISTANCE
0
246810
-V
,
GATE TO SOURCE VOLTAGE (V)
GS
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
TJ= 125 oC
TJ= 25 oC
®
MOSFET
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
vs Junction Temperature
120
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
100
V
= -5 V
DS
80
60
40
, DRAIN CURRENT (A)
D
-I
20
0
012345
TJ = 150 oC
TJ = 25 oC
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDMS6673BZ RevC
3
TJ = -55 oC
Figure 4.
O n - R es i s t a n c e vs G a t e t o
Source Voltage
200
100
V
= 0 V
GS
10
1
TJ= 150 oC
TJ = 25 oC
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
-I
0.001
0.00.20.40.60.81.01.21.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
TJ = -55 oC
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMS6673BZ P-Channel PowerTrench
Typical Characteristics T
10
ID= -15.2 A
8
VDD = 10 V
6
V
= 15 V
4
2
, GATE TO SOURCE VOLTAGE (V)
GS
-V
0
0 20406080100
Figure 7.
50
10
, AVALANCHE CURRENT (A)
AS
-I
1
0.01 0.1 1 10 100
DD
Qg, GATE CHARGE (nC)
Gate Charge Characteristics Figure 8.
TJ= 100 oC
TJ= 125 oC
tAV, TI ME IN AVALANCHE (ms)
= 25 °C unless otherwise noted
J
VDD = 20 V
TJ= 25 oC
200
10000
1000
CAPACITANCE (pF)
f = 1 MHz
= 0 V
V
GS
300
0.1 1 10 30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
C a p a c i t a n c e v s D r a i n
to Source Voltage
100
80
60
V
= 4.5 V
40
DRAIN CURRENT (A)
,
D
-I
20
0
GS
Limited by Package
R
= 1.7 oC/W
T
JC
25 50 75 100 125 150
T
,
CASE TEMPERATURE
C
VGS= 10 V
o
(
C
)
C
iss
C
oss
C
rss
®
MOSFET
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
200
100
10
THIS AREA IS
1
LIMITED BY r
SINGLE PULSE
, DRAIN CURRENT (A)
D
-I
0.1
0.01
= MAX RATED
T
J
R
T
JA
T
A
0.01 0.1 1 10 100
DS(on)
= 125 oC/W
= 25 oC
-VDS, DRAIN to SOURCE VOLTAGE (V)
F ig u re 1 1. F or w ar d B ia s Sa f e
Operating Area
©2009 Fairchild Semiconductor Corporation
FDMS6673BZ RevC
3
100 us
1 ms
10 ms
100 ms
1 s
10 s
DC
200
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
-4
10
VGS= 0 V
-5
10
-6
10
-7
10
-8
10
GATE LEAKAGE CURRENT (A)
,
g
-I
-9
10
0 5 10 15 20 25 30
4
TJ= 125 oC
TJ= 25 oC
,
-V
GATE TO SOURCE VOLTAGE (V)
GS
Figure 12. Igss vs Vgss
www.fairchildsemi.com
FDMS6673BZ P-Channel PowerTrench
Typical Characteristics T
2000
VGS = -10 V
-3
10
Figure 13. Single Pulse Maximum Power Dissipation
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
-3
10
Figure 14.
NORMALIZED THERMAL
1000
100
PEAK TRANSIENT POWER (W)
,
)
PK
(
P
JA
T
Z
IMPEDANCE,
0.001
0.0004
10
0.5
1
10
0.1
0.01
-4
2
1
-4
10
= 25 °C unless otherwise noted
J
SINGLE PULSE
= 125 oC/W
R
T
JA
T
= 25 oC
A
-2
10
-1
10
110
t, PULSE WIDTH (sec)
P
NOTES:
SINGLE PULSE
= 125 oC/W
R
T
JA
-2
10
-1
10
t, RECTANGULAR PULSE DURATION (sec)
110
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
TJA
Junction-to-Ambient Transient Thermal Response Curve
100 1000
DM
t
1
t
2
2
x R
+ T
TJA
A
100 1000
®
MOSFET
©2009 Fairchild Semiconductor Corporation
FDMS6673BZ RevC
3
5
www.fairchildsemi.com
Dimensional Outline and Pad Layout
FDMS6673BZ P-Channel PowerTrench
®
MOSFET
©2009 Fairchild Semiconductor Corporation
FDMS6673BZ RevC
3
6
www.fairchildsemi.com
TRADEMARKS
®
t
m
The following includes registered a nd unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™*
™*
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
®
tm
®
®
®
®
*
®
FPS™
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
m
PDP SPM™
Power-SPM™
PowerTrench
®
®
SM
®
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
®*
The Power Franchise
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
t
®
®
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRA
NTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMS6673BZ P-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labelin
g, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
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www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Se
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference infor
miconductor reserves the right to make changes at any time without
mation only.
Rev. I41
©2009 Fairchild Semiconductor Corporation7www.fairchildsemi.com
FDMS6673BZ RevC3
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