Fairchild FDMS6673BZ service manual

FDMS6673BZ

P-Channel PowerTrench® MOSFET

-30 V, -28 A, 6.8 m: Features

 Max r

 Advanced Package and Silicon combination

for low r

 HBM ESD protection level of 8 kV typical(note 3)

 MSL1 robust package design

 RoHS Compliant

= 6.8 m: at VGS = -10 V, ID = -15.2 A

DS(on)

= 12.5 m: at VGS = -4.5 V, ID = -11.2 A

DS(on)

August 2009

General Description

The FDMS6673BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest r ESD protection.

DS(on)

and

Applications

 Load Switch in Notebook and Server

 Notebook Battery Pack Power Management

FDMS6673BZ P-Channel PowerTrench

®

MOSFET

Top

D

Bottom

D

Pin 1

S

G

5

D

6

D

7

D

8

4

3

2

1

Power 56

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage -30 V

Gate to Source Voltage ±25 V

Drain Current -Continuous (Package limited) TC= 25 °C -28

-Continuous (Silicon limited) T

-Continuous T

-Pulsed -120

Power Dissipation TC = 25 °C 73

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

C

= 25 °C -90

C

= 25 °C (Note 1a) -15.2

A

= 25 °C (Note 1a) 2.5

A

Thermal Characteristics

R

TJC

R

TJA

Thermal Resistance, Junction to Case 1.7

Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

G

S

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDMS6673BZ FDMS6673BZ Power 56 13 ’’ 12 mm 3000 units

3

1

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FDMS6673BZ P-Channel PowerTrench

Electrical Characteristics T

bol Parameter Test Conditions Min Typ Max Units

Sym

= 25 °C unless otherwise noted

J

Off Characteristics

BV

'BV 'T

I

DSS

I

GSS

DSS

J

Drain to So

Breakdown Volt

urce Breakdown Voltage I

age Temperature

Coefficient

Zero Gate Voltag

e Drain Current V

Gate to Source Leakage Current

= -250 PA, VGS = 0 V -30

D

= -250 PA, referenc

I

D

= -24 V, VGS= 0 V -1 PA

DS

= ±25 V, VDS= 0 V

V

GS

ed to 25 °C -18 mV/°C

V

On Characteristics

V

GS(th)

'V 'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold V

Gate to Source Threshold V Temperature Coefficient

Static Drain to

Forward Transconduct

Dynamic Charac

C

iss

C

oss

C

rss

R

g

Input Capacit

Output Capacitance

Reverse Transfer C

Gate Resistance 4.5 :

Source On Resistance

teristics

ance

apacitance 695 1045 pF

oltage V

oltage

ance V

= VDS, ID = -250 PA -1.0

GS

= -250 PA, referenced to 25

I

D

V

GS

V

GS

DS

V

DS

f = 1 MHz

, I

= -10 V

= -4.5 V

= -15.2 A 5.2

D

, I

= -11.2 A 7.8

D

= -10 V, ID = -15.2 A, TJ= 125 °C 7.5 9.8

= -5 V,

= -15.2 A 76 S

I

D

= -15 V, VGS = 0 V,

°C 7 mV/°C

-1.8 -3.0 V

4444 5915 pF

781 1040 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Turn-On De

Rise Time 28

Turn-Of

lay Time

V

= -15 V, ID = -15.2 A,

DD

= -10 V, R

f Delay Time 97 156 ns

V

GS

GEN

= 6 :

Fall Time 79

g

gs

gd

Total Gate

Gate to Source Charge

Gate to Drain “Miller” Charge 2

Charge V

= 0 V to -10 V

GS

= 0 V to -5 V 52

GS

= -15 V,

V

DD

= -15.2 A

I

D

14 26

93 130

13 nC

6nC

±10

6.8

12.5

m:V

45 ns

127 ns

73 nC

PA

®

MOSFET

ns

nC

Drain-Source Diode Characteristics

V

= 0 V, IS= -2.1 A (Note 2) 0.7

V

SD

t

rr

Q

rr

Notes: 1: R

TJA

the user's board design.

2: Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3: The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.

Source to Drain Diode Forward V

Reverse Recovery Time

Reverse Recovery Charge 20

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

3

oltage

a. 50 °C/W when mounted on a

2

1 in

pad of 2 oz copper.

GS

V

= 0 V, IS= -15.2 A (Note 2) 0.8 1.25

GS

= -15.2 A, di/dt = 100 A/Ps

I

F

2

33 53

is guaranteed by design while R

TJC

b. 125 °C/W when mounted on a minimum pad of 2 oz copper.

1.20

32 nC

is determined by

TCA

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V

ns

ildsemi.com

FDMS6673BZ P-Channel PowerTrench

Typical Characteristics T

120

100

80

60

40

DRAIN CURRENT (A)

,

D

-I

20

0

01234

-V

Figure 1.

1.6

ID = -15.2 A

= -10 V

V

GS

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

VGS = - 10 V

VGS = - 6 V

VGS = - 4.5 V

VGS = -4 V

,

DRAIN TO SOURCE VOLTAGE (V)

DS

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

On Region Characteristics Figure 2.

, JUNCTION TEMPERATURE

J

= 25 °C unless otherwise noted

J

VGS = -3.5 V

VGS = -3 V

o

(

C

)

4.0

3.5

VGS = -3 V

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

3.0

VGS = -3.5 V

VGS = -4 V

2.5

2.0

VGS = -4.5 V

NORMALIZED

1.5

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 0 20406080100120

-I

,

DRAIN CURRENT (A)

D

VGS = -6 V

V

= -10 V

GS

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

25

)

:

m

20

(

ID= -15.2 A

15

DRAIN TO

,

10

DS(on)

r

5

SOURCE ON-RESISTANCE

0

246810

-V

,

GATE TO SOURCE VOLTAGE (V)

GS

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

TJ= 125 oC

TJ= 25 oC

®

MOSFET

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

vs Junction Temperature

120

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

100

V

= -5 V

DS

80

60

40

, DRAIN CURRENT (A)

D

-I

20

0

012345

TJ = 150 oC

TJ = 25 oC

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

3

TJ = -55 oC

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

200 100

V

= 0 V

GS

10

1

TJ= 150 oC

TJ = 25 oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

-I

0.001

0.00.20.40.60.81.01.21.4

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55 oC

Forward Voltage vs Source Current

3

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