Fairchild FDMS5672 service manual

tm

FDMS5672
N-Channel UltraFET Trench® MOSFET

60V, 22A, 11.5mΩ
Features

 Max r

 Max r

 Typ Qg = 32nC at VGS = 10V

 Low Miller Charge

 Optimized efficiency at high frequencies

 RoHS Compliant

= 11.5mΩ at VGS = 10V, ID = 10.6A

DS(on)

= 16.5mΩ at VGS = 6V, ID = 8A

DS(on)

S

Pin 1

S

S

G

General Description

UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r
these devices are ideal for high frequency DC to DC converters.

DS(on)

Application

 DC - DC Conversion

D

5

December 2007

, low ESR, low total and Miller gate charge,

G

4

FDMS5672 N-Channel UltraFET Trench

®

MOSFET

D

6

7

D

D

D

Power 56 (Bottom view)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 60 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC = 25°C 22

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 60

Single Pulse Avalanche Energy (Note 3) 337 mJ

Power Dissipation TC = 25°C 78

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

D

D

D

= 25°C unless otherwise noted

A

C

A

A

8

= 25°C 65

= 25°C (Note 1a) 10.6

= 25°C (Note 1a) 2.5

S

3

S

2

S

1

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.6

Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDMS5672 FDMS5672 Power 56 13’’ 12mm 3000 units

©2006 Fairchild Semiconductor Corporation
FDMS5672 Rev.C2

1

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FDMS5672 N-Channel UltraFET Trench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current VDS = 48V, V

Gate to Source Leakage Current VGS = ±20V, V

ID = 250µA, referenced to 25°C 59 mV/°C

= 0V 1 µA

GS

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2 3.2 4 V

Gate to Source Threshold Voltage
Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance VDS = 10V, ID = 10.6A 26 S

ID = 250µA, referenced to 25°C -11 mV/°C

VGS = 10V, ID = 10.6A 9.4 11. 5

VGS = 6V, ID = 8A 13.0 16.5

VGS = 10V, ID = 10.6A,
T

= 125°C

J

15.0 18.0

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 375 500 pF

Reverse Transfer Capacitance 120 180 pF

VDS = 30V, VGS = 0V,
f = 1MHz

2100 2800 pF

Gate Resistance f = 1MHz 1.2 Ω

mΩ

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 17 31 ns

Turn-Off Delay Time 22 35 ns

VDD = 30V, ID = 10.6A
VGS = 10V, R

GEN

Fall Time 8 16 ns

Total Gate Charge at 10V V

= 0V to 10V

GS

Gate to Source Gate Charge 10 nC

Gate to Drain “Miller” Charge 8.3 nC

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

θJA

the user's board design.

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge 42 63 nC

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

a.

50°C/W when mounted on a

2

pad of 2 oz co pper

1 in

= 25°C, L = 3mH, IAS = 15A, VDD = 60V, VGS = 10V.

J

= 0V, IS = 10.6A (Note 2) 0.80 1.20 V

GS

IF = 10.6A, di/dt = 100A/µs

= 6Ω

VDD = 30V
ID = 10.6A

16 29 ns

32 45 nC

35 53 ns

is guaranteed by design while R

θJC

125°C/W when mounted on a

b.

minimum pad of 2 oz copper

is determined by

θCA

FDMS5672 Rev.C2

2

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FDMS5672 N-Channel UltraFET Trench

Typical Characteristics T

120

VGS = 10V

100

VGS = 8V

80

60

40

, DRAIN CURRENT (A)
D

I

20

0

01234

VDS, DRAIN TO SOURCE VOLTAGE (V)

NORMALIZED

Figure 1.

1.8

1.6

1.4

1.2

1.0

0.8

On Region Characteristics Figure 2.

ID = 10.6A
V

= 10V

GS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

VGS = 7V

= 25°C unless otherwise noted

J

VGS = 6V

VGS = 5V

4.0

3.5

3.0

2.5

2.0

NORMALIZED

1.5

1.0

0.5

DRAIN TO SOURCE ON-RESISTANCE

0 20406080100120

VGS = 5V

VGS = 6V

ID, DRAIN CURRENT(A)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

VGS = 8V

VGS = 10V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

30

25

(mΩ)

20

ID =10.6A

15

, DRAIN TO

DS(on)

r

10

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

TJ = 125oC

o

T

= 25

C

J

VGS = 7V

®

MOSFET

0.6

DRAIN TO SOURCE ON-RESISTANCE

-75 -50 -25 0 25 50 75 100 125 150

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

60

50

40

30

20

, DRAIN CURRENT (A)

10

D

I

0

FDMS5672 Rev.C2

TJ, JUNCTION TEMPERATURE (oC)

vs Junction Temperature

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

TJ = 25oC

TJ = 150oC

23456

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

Figure 5. Transfer Characteristics

3

SOURCE ON-RESISTANCE

5

45678910

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

100

V

= 0V

GS

10

1

TJ = 150oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

1E-3

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

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