Fairchild FDMS5352 service manual

May 2009

FDMS5352 N-Channel Power Trench

FDMS5352

N-Channel Power Trench® MOSFET

60V, 49A, 6.7m:

Features

 Max r

 Advanced Package and Silicon combination for low r

 MSL1 robust package design

 100% UIL Tested

 RoHS Compliant

= 6.7m: at VGS = 10V, ID = 13.6A

DS(on)

= 8.2m: at VGS = 4.5V, ID = 12.3A

DS(on)

Top

Power 56

DS(on)

Bottom

S

D

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

®

process that has

Application

 DC - DC Conversion

S

Pin 1

G

5

D

6

7

D

8

D

G

4

S

3

S

2

S

1

tm

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

TJC

R

TJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS5352 FDMS5352 Power 56 13’’ 12mm 3000 units

Drain to Source Voltage 60 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25°C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 100

Single Pulse Avalanche Energy (Note 3) 600 mJ

Power Dissipation TC = 25°C 104

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 1.2

Thermal Resistance, Junction to Ambient (Note 1a) 50

1

= 25°C unless otherwise noted

A

= 25°C 88

C

= 25°C (Note 1a) 13.6

A

= 25°C (Note 1a) 2.5

A

1

A

W

°C/W

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FDMS5352 N-Channel Power Trench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV 'T

I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 60 V

Breakdown Voltage Temperature Coefficient

= 250PA, referenced to 25°C 57 mV/°C

I

D

Zero Gate Voltage Drain Current VGS= 0V, VDS = 48V, 1 PA

Gate to Source Leakage Current VGS = ±20V, VDS= 0V ±100 nA

On Characteristics

V

GS(th)

'V 'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 1.0 1.8 3.0 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

= 250PA, referenced to 25°C -6.6 mV/°C

I

D

V

= 10V, ID = 13.6A 5.6 6.7

GS

= 4.5V, ID = 12.3A 6.7 8.2

GS

= 10V, ID = 13.6A, TJ= 125°C 9.7 11.6

V

GS

Forward Transconductance VDD = 5V, ID = 13.6A 76 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 410 545 pF

Reverse Transfer Capacitance 225 335 pF

= 30V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance f = 1MHz 1.3 :

5220 6940 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Turn-On Delay Time

Rise Time 11 21 ns

Turn-Off Delay Time 58 93 ns

= 30V, ID = 13.6A,

V

DD

V

= 10V, R

GS

GEN

= 6:

Fall Time 715ns

g

gs

gd

Total Gate Charge VGS = 0 V t o 1 0 V

Total Gate Charge VGS = 0V to 5V 48 67 nC

Gate to Source Charge 14 nC

= 30V,

V

DD

I

= 13.6A

D

Gate to Drain “Miller” Charge 17 nC

19 34 ns

93 131 nC

m:V

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

the user's board design.

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

3. Starting T

©2

009 Fairchild Semiconductor Corporation

FDMS5352 Rev.C

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 48 77 nC

= 25°C, L = 3mH, IAS = 20A, VDD = 60V, VGS = 10V

J

1

V

= 0V, IS= 13.6A (Note 2) 0.8 1.3

GS

= 0V, IS= 2.1A (Note 2) 0.7 1.2

V

GS

= 13.6A, di/dt = 100A/Ps

I

F

a. 50°C/W when mounted on a

2

pad of 2 oz copper.

1 in

39 63 ns

is guaranteed by design while R

TJC

b. 125°C/W when mounted on a minimum pad of 2 oz copper.

is determined by

TCA

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V

FDMS5352 N-Channel Power Trench

Typical Characteristics T

100

VGS = 10V

80

60

40

, DRAIN CURRENT (A)

20

D

I

0

0.00.51.01.52.0

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 1.

On-Region Characteristics Figure 2.

2.2

ID = 13.6A

2.0

V

= 10V

GS

1.8

1.6

1.4

1.2

1.0

NORMALIZED

0.8

0.6

DRAIN TO SOURCE ON-RESISTANCE

0.4

-75 -50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (

J

VGS = 3.5V

VGS = 4V

VGS = 4.5V

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

= 25°C unless otherwise noted

J

VGS = 3V

o

C)

3.0

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

2.5

VGS = 3V

2.0

1.5

NORMALIZED

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 020406080100

I

, DRAIN CURRENT(A)

D

VGS = 3.5V

VGS=4.5V

V

GS

V

=10V

GS

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

20

ID= 13.6A

(m:)

15

10

DRAIN TO

,

DS(on)

r

5

SOURCE ON-RESISTANCE

0

246810

V

, GATE TO SOURCE VOLTAGE (V)

GS

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

TJ= 125oC

TJ= 25oC

= 4V

®

MOSFET

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

100

PULSE DURATION = 80Ps DUTY CYCLE = 0.5 %MAX

80

VDS= 5V

60

40

, DRAIN CURRENT (A)

20

D

I

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

©2

009 Fairchild Semiconductor Corporation

FDMS5352 Rev.C

1

TJ= 150oC

TJ = 25oC

TJ = -55oC

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

100

VGS= 0V

10

TJ= 150oC

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

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