Fairchild FDMS4435BZ service manual

FDMS4435BZ

Bottom

Power 56

Top

Pin 1

P-Channel PowerTrench® MOSFET

-30 V, -18 A, 20 mΩ Features

 Max r  Max r

 Extended V  High performance trench technology for extremely low r  High power and current handling capability  HBM ESD protection level >7 kV typical (Note 4)  100% UIL tested  Termination is Lead-free and RoHS Compliant

= 20 mΩ at VGS = -10 V, ID = -9.0 A

DS(on)

= 37 mΩ at VGS = -4.5 V, ID = -6.5 A

DS(on)

range (-25 V) for battery applications

GSS

DS(on)

General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Applications

 High side in DC-DC Buck Converters  Notebook battery power management  Load switch in Notebook

March 2011

process that has

FDMS4435BZ P-Channel Power Trench

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage -30 V Gate to Source Voltage ±25 V Drain Current -Continuous (Package limited) TC = 25 °C -18

-Continuous (Silicon limited) T

-Continuous T

-Pulsed -50 Single Pulse Avalanche Energy (Note 3) 18 mJ Power Dissipation TC = 25 °C 39 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C -35

= 25 °C (Note 1a) -9.0

= 25 °C (Note 1a) 2.5

Thermal Characteristics

θJC

θJA

Thermal Resistance, Junction to Case 3.2 Thermal Resistance, Junction to Ambient (Note 1a) 50

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS4435BZ FDMS4435BZ Power 56 13 ’’ 12 mm 3000 units

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FDMS4435BZ P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -30 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = -24 V, V Gate to Source Leakage Current VGS = ±25 V, V

= -250 μA, referenced to 25 °C -23 mV/°C

= 0 V -1 μA

= 0 V ±10 μA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -1.0 -1.9 -3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= -250 μA, referenced to 25 °C 6 mV/°C

= -10 V, ID = -9.0 A 15 20

= -4.5 V, ID = -6.5 A 22 37

= -10 V, ID = -9.0 A

= 125 °C

21 28

Forward Transconductance VDS = -5 V, ID = -9.0 A 25 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 290 390 pF Reverse Transfer Capacitance 260 385 pF

= -15 V, VGS = 0 V,

f = 1 MHz

Gate Resistance 5 Ω

1540 2050 pF

mΩ

MOSFET

Switching Characteristics

d(on)

d(off)

Turn-On De lay Time Rise Time 10 18 ns Turn-Off Delay Time 35 56 ns Fall Time 19 33 ns Total Gate Charge VGS = 0 V to -10 V Total Gate Charge VGS = 0 V to -4.5 V 18 25 nC Gate to Source Charge 5 nC Gate to Drain “Miller” Charge 9 nC

= -15 V, ID = -9.0 A,

= -10 V, R

GEN

Drain-Source Diode Characteristics

= 0 V, IS = -1.9 A (Note 2) 0.75 1.2

Notes:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1 .5 x 1.5 in . boa rd o f FR- 4 m ateria l. R

1. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 12 21 nC

50 °C/W when mounted on a

1 in

pad of 2 oz copper

= 0 V, IS = -9.0 A (Note 2) 0.86 1.5

= -9.0 A, di/dt = 100 A/μs

= 6 Ω

= -9.0 A

= -15 V,

θJC

917ns

34 47 nC

25 39 ns

is guaranteed by design while R

b) 125 °C/W when mounted on a minimum pad of 2 oz copper.

is determined by

θCA

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. E

of 18 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = -6 A, VDD = -27 V, VGS = -10 V. 100% tested at L = 0.3 mH, IAS = -8 A.

4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

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FDMS4435BZ P-Channel PowerTrench

01234

VGS = -6 V

VGS = -3.5 V

VGS = -10 V

VGS = -4 V

VGS = -4.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

-I

, DRAIN CURRENT (A)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

0 1020304050

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS = -4 V

VGS = -3.5 V

VGS = -6 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

-ID, DRAIN CURRENT (A)

VGS = -4.5 V

= -10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = - 9 A V

= -10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTION TEMPERATURE (

246810

TJ = 125 oC

ID = -9 A

TJ = 25 oC

-V

, GATE TO SOURCE V OLTAGE (V )

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

12345

TJ = 25 oC

= -5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 125 oC

-I

, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE VO LTAGE (V)

0.00.20.40.60.81.01.21.4

0.001

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

= 0 V

-I

, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

Nor mal ize d On-R esi sta nce

vs Drain Current and Gate Voltage

MOSFET

Figur e 3. No rma li zed On - Re si sta nc e

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resist ance vs Gate to

Source Voltage

Figure 6.

Source to D rain Diode

Forward Voltage vs Source Current

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