Fairchild FDMS3672 service manual

tm

FDMS3672
N-Channel UltraFET Trench MOSFET

100V, 22A, 23mΩ
Features

 Max r
 Max r
 Typ Qg = 31nC at VGS = 10V
 Low Miller Charge
 Optimized efficiency at high frequencies
 RoHS Compliant

= 23mΩ at VGS = 10V, ID = 7.4A

DS(on)

= 29mΩ at VGS = 6V, ID = 6.6A

DS(on)

General Description

UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r
these devices are ideal for high frequency DC to DC converters.

DS(on)

Application

 DC - DC Conversion

FDMS3672 N-Channel UltraFET Trench MOSFET

February 2007

, low ESR, low total and Miller gate charge,

Pin 1

S

D

D

Power (Bottom view)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 22

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 30
Power Dissipation TC = 25°C 78
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

S

S

G

D

5

D

6
7

D
D

D

D

= 25°C unless otherwise noted

A

C

A

8

= 25°C 41

= 25°C (Note 1a) 7.4

A

= 25°C (Note 1a) 2.5

G

4

S

3

S

2

S

1

Thermal Characteristics

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.6
Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS3672 FDMS3672 Power 56 13’’ 12mm 3000 units

©2007 Fairchild Semiconductor Corporation
FDMS3672 Rev.C

°C/W

1

www.fairchildsemi.com

FDMS3672 N-Channel UltraFET Trench MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±20V, V

ID = 250µA, referenced to 25°C 104 mV/°C
VDS = 80V, 1

V

= 0V TJ = 55°C 10

GS

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2 3.1 4 V
Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance VDS = 10V, ID = 7.4A 20 S

ID = 250µA, referenced to 25°C -11 mV/°C
VGS = 10V, ID = 7.4A 19 23

VGS = 10V, ID = 7.4A, TJ = 125°C 33 40

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 210 280 pF
Reverse Transfer Capacitance 90 135 pF

VDS = 50V, VGS = 0V,
f = 1MHz

2015 2680 pF

Gate Resistance f = 1MHz 1.3 Ω

µA

mΩVGS = 6V, ID = 6.6A 24 29

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 11 20 ns
Turn-Off Delay Time 36 58 ns

VDD = 50V, ID = 7.4A
VGS = 10V, R

GEN

Fall Time 8 16 ns
Total Gate Charge at 10V V
Total Gate Charge at 4.5V V

= 0V to 10V

GS

= 0V to 4.5V nC

GS

Gate to Source Gate Charge 9.5 nC
Gate to Drain “Miller” Charge 8 nC

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

θJA

the user's board design.

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 101 152 nC

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR -4 mate rial. R

a. 50°C/W when mounted on

2

a 1 in

pad of 2 oz copper

= 0V, IS = 7.4A (Note 2) 0.8 1.2 V

GS

IF = 7.4A, di/dt = 100A/µs

= 6Ω

VDD = 50V
ID = 7.4A

23 37 ns

31 44 nC

52 78 ns

is guaranteed by design while R

θJC

b. 125°C/W when mounted on a
minimum pad of 2 oz copper

is determined by

θCA

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

FDMS3672 Rev.C

2

www.fairchildsemi.com

FDMS3672 N-Channel UltraFET Trench MOSFET

Typical Characteristics T

60

VGS = 10V

50

40

30

20

, DRAIN CURRENT (A)

D

10

I

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, DRAIN TO SOURCE VOLTA GE (V)

Figure 1.

2.0

1.8

On-Region Characteristics Figure 2.

ID = 7.4A
V

= 10V

GS

1.6

1.4

1.2

1.0

NORMALIZED

0.8

0.6

0.4

DRAIN TO SOURCE ON-RESISTANCE

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

Figur e 3 . Norm al ized O n- Resis ta nce

vs Junction Temperature

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

VGS = 8V

VGS = 6V

VGS = 5V

= 25°C unless otherwise noted

J

3.0

PULSE DURATION = 80µs

2.5

VGS = 5V

DUTY CYCLE = 0.5%MAX

VGS = 6V

2.0

1.5

NORMALIZED

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5
0 102030405060

ID, DRAIN CURRENT(A)

V

GS

V

Nor ma liz ed On- Res is tan ce

vs Drain Current and Gate Voltage

60

ID = 7.4A

50

(mΩ)

40

30

, DRAIN TO

DS(on)

r

20

SOURCE ON-RESISTANCE

10

4.5 6.0 7.5 9.0

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4.

On-Resistance vs Gate to

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

TJ = 150oC

o

T

= 25

C

J

Source Voltage

GS

= 8V

= 10V

10

30

25

20

15

10

, DRAIN CURRENT (A)

D

I

FDMS3672 Rev.C

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

TJ = 150oC

TJ = 25oC

5

TJ = -55oC

0

2345678

VGS, GATE TO SOURCE VOLTA G E (V)

Figure 5. Transfer Characteristics

100

V

= 0V

GS

10

TJ = 150oC

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

1E-3

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWA RD VO LT AGE (V)

Figure 6.

Source to Drain Diode

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

3

www.fairchildsemi.com