Fairchild FDMS3626S service manual

FDMS3626S

Power 56

G1

D1

G2

S2

D1

PHASE (S1/D2)

Top Bottom

Pin 1

PowerTrench® Power Stage

25V Asymmetric Dual N-Channel MOSFET

FDMS3626S PowerTrench

December 2011

Features

Q1: N-Channel

 Max r  Max r

Q2: N-Channel

 Max r  Max r  Low inductance packaging shortens rise/fall times, resulting in

lower switching losses

 MOSFET integration enables optimum layout for

lower circuit inductance and reduced switch node ringing

 RoHS Compliant

= 5.0 mΩ at VGS = 10 V, ID = 17.5 A

DS(on)

= 5.7 mΩ at VGS = 4.5 V, ID = 16 A

DS(on)

= 2.6 mΩ at VGS = 10 V, ID = 25 A

DS(on)

= 3.2 mΩ at VGS = 4.5 V, ID = 22 A

DS(on)

General Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Applications

 Computing  Communications  General Purpose Point of Load  Notebook VCORE

®

Power Stage

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

E

AS

P

D

TJ, T

STG

Drain to Source Voltage 25 25 V Gate to Source Voltage (Note 4) ±12 ±12 V Drain Current -Continuous (Package limited) TC = 25 °C 30 55

-Pulsed 70 100 Single Pulse Avalanche Energy (Note 3) 29 45 mJ Power Dissipation for Single Operation TA = 25 °C 2.2 Power Dissipation for Single Operation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 17.5

A

= 25 °C 1.0

A

1a

1a 1c

25

2.5

1.0

1b

1b 1d

A -Continuous T

W

Thermal Characteristics

R

θJA θJA

R

θJC

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

Thermal Resistance, Junction to Ambient 57 Thermal Resistance, Junction to Ambient 125 Thermal Resistance, Junction to Case 3.0 3.0

08OD 10OD

FDMS3626S Power 56 13 ” 12 mm 3000 units

1a

1c

50

120

1b

1d

°C/WR

FDMS3626S PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

ΔBV ΔT

I

DSS

I

GSS

DSS

DSS J

= 250 μA, VGS = 0 V

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 20 V, V

D

I

= 1 mA, VGS = 0 V

D

ID = 250 μA, referenced to 25 °C I

= 10 mA, referenced to 25 °C

D

= 0 V

GS

Gate to Source Leakage Current VGS = 12 V/-8 V, VDS= 0 V

Q1Q225

25

Q1 Q2

V

12 25

500

±100 ±100nAnA

mV/°C

1

I

On Characteristics

V

GS(th)

ΔV ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance

= VDS, ID = 250 μA

GS

V

= VDS, ID = 1 mA

GS

ID = 250 μA, referenced to 25 °C I

= 10 mA, referenced to 25 °C

D

= 10 V, ID = 17.5 A

V

GS

V

= 4.5 V, ID = 16 A

GS

V

= 10 V , ID = 17.5 A,TJ =125 °C

GS

V

= 10 V, ID = 25 A

GS

V

= 4.5 V, ID = 22 A

GS

V

= 10 V, ID =25 A ,TJ =125 °C

GS

V

= 5 V, ID = 17.5 A

DS

V

= 5 V, ID = 25 A

DS

Q1Q20.8

1.1

Q1 Q2

Q1

Q2

Q1 Q2

1.2

1.4

-4

-3

3.8

4.4

5.4

2.1

2.6

2.9

100 227

2.0

2.2 mV/°C

5.0

5.7

7.0

2.6

3.2

3.8

μA μA

V

mΩ

S

®

Power Stage

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

Q1:

= 13 V, VGS = 0 V, f = 1 MHZ

V

DS

Q2:

= 13 V, VGS = 0 V, f = 1 MHZ

V

DS

Q1 Q2

1570 2545

448 716

61

103

0.4

0.9

pF

Ω

7 8

2 4

23 31

2 3

26 41

12 19

3.3

4.9

2.7

4.3

ns

nC

Q1:

= 13 V , ID = 17.5 A, R

V

DD

Q2:

= 13 V, ID = 25 A, R

V

DD

= 0 V to 10 V

GS

= 0 V to 4.5 V

GS

= 6 Ω

GEN

= 6 Ω

GEN

Q1 V

= 13 V,

DD

I

= 17.5 A

D

Q2 VDD = 13 V, I

= 25 A

D

Q1 Q2

FDMS3626S PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

0.8

0.8 23

23

22

1.2

9

is determined by

θCA

V

= 0 V, IS = 17.5 A (Note 2)

V

SD

t

rr

Q

rr

Notes:

1.R

is determined with the device mo un ted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boar d o f FR - 4 mat er i al. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

a. 57 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

SS

SF

DF

DS

G

c. 125 °C/W when mounted on a minimum pad of 2 oz copper

GS

V

= 0 V, IS = 25 A (Note 2)Q1Q2

GS

Q1

= 17.5 A, di/dt = 100 A/μs

I

F

Q2 I

= 25 A, di/dt = 300 A/μs

F

DS

DF

G

SF

SS

Q1 Q2

is guaranteed by design while R

θJC

b. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper

d. 120 °C/W when mounted on a minimum pad of 2 oz copper

ns

nC

V

®

Power Stage

SF

SS

DS

DF

SF

SS

DS

DF

G

2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

of 29 mJ is based on starting TJ = 25 oC; N-ch: L = 1.2 mH, IAS = 7 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 16 A.

3. Q1 :E

AS

Q2: EAS of 45 mJ is based on starting TJ = 25 oC; N-ch: L = 0.4 mH, IAS = 15 A, VDD = 23 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 23.8 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

G

FDMS3626S PowerTrench

0.0 0 .3 0.6 0.9 1.2 1.5

0

10

20

30

40

50

60

70

V

GS

= 2.5 V

V

GS

= 3 V

V

GS

= 10 V

V

GS

= 4.5 V

V

GS

= 3.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 10203040506070

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 2.5 V

VGS = 4.5 V

VGS = 3 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 3.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

ID = 17.5 A V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

2345678910

0

4

8

12

16

20

TJ = 125 oC

ID = 17.5 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTA G E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

0.5 1.0 1.5 2.0 2.5 3.0

0

10

20

30

40

50

60

70

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

70

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics (Q1 N-Channel) T

Figure 1.

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

Nor ma liz ed On- Res is tan ce

vs Drain Current and Gate Voltage

®

Power Stage

Figure 3. Normali ze d O n R es is tance

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance v s Ga te t o

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current