Fairchild FDMS3615S service manual

FDMS3615S

Q

G1

D1

G2

S2

D1

PHASE (S1/D2)

S2

S2 S2 G2

D1

D1 D1

G1

PHASE

Power 56

Top Bottom

Pin 1

PowerTrench® Power Stage

25V Asymmetric Dual N-Channel MOSFET

FDMS3615S PowerTrench

August 2011

Features

Q1: N-Channel

 Max r  Max r

Q2: N-Channel

 Max r  Max r  Low inductance packaging shortens rise/fall times, resulting in

lower switching losses

 MOSFET integration enables optimum layout for lower circuit

inductance and reduced switch node ringing

 RoHS Compliant

= 5.8 mΩ at VGS = 10 V, ID = 16 A

DS(on)

= 8.3 mΩ at VGS = 4.5 V, ID = 13 A

DS(on)

= 3.4 mΩ at VGS = 10 V, ID = 18 A

DS(on)

= 4.6 mΩ at VGS = 4.5 V, ID = 15 A

DS(on)

General Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Applications

 Computing  Communications  General Purpose Point of Load  Notebook VCORE  Server

2

5 6 7 8

4 3 2 1

1

®

Power Stage

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

E

AS

P

D

TJ, T

STG

Drain to Source Voltage 25 25 V Gate to Source Voltage (Note 3) ±20 ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 23 18

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 45 36 Single Pulse Avalanche Energy 38 Power Dissipation for Single Operation TA = 25°C 2.3 Power Dissipation for Single Operation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

A

= 25 °C 89 88

C

= 25 °C 16

A

= 25°C 1.0

A

1a

4 1a 1c

18

98

2.3

1.0

1b

5 1b 1d

A

mJ

W

Thermal Characteristics

R

θJA

R

θJA

Thermal Resistance, Junction to Ambient 55 Thermal Resistance, Junction to Ambient 125

1a

1c

55

125

1b

°C/W

1d

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

Y8OA

K10OC

FDMS3615S Power 56 13 ” 12

mm 3000 units

FDMS3615S PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

ΔBV ΔT

I

DSS

I

GSS

DSS

DSS J

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current V

Gate to Source Leakage Current V

= 250 μA, VGS = 0 V

D

I

= 1 mA, VGS = 0 V

D

I

= 250 μA, referenced to 25°C

D

I

= 10 mA, referenced to 25°C

D

= 20 V, V

DS

= 20 V, V

GS

DS

= 0 V = 0 V

Q1Q225

25

Q1 Q2

V

18 16

mV/°C

1

500 100

100nAnA

I

On Characteristics

V

GS(th)

ΔV ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance

= VDS, I

GS

V

= VDS, I

GS

I

= 250 μA, referenced to 25°C

D

I

= 10 mA, referenced to 25°C

D

= 10 V, ID = 16 A

V

GS

V

= 4.5 V, ID = 13 A

GS

V

= 10 V, ID = 16 A, T

GS

V

= 10 V, ID = 18 A

GS

V

= 4.5 V, ID = 15 A

GS

V

= 10 V, ID = 18 A, T

GS

V

= 5 V, ID = 16 A

DD

V

= 5 V, ID = 18 A

DD

= 250 μA

D

= 1 mA

D

= 125°C

J

= 125°C

J

Q1Q21.2

1.2

Q1 Q2

Q1

Q2

Q1 Q2

1.7

1.8

-5

-6

4.8

6.9

6.6

2.5

3.6

3.4 63

84

2.5

2.5 mV/°C

5.8

8.3

7.9

3.4

4.6

4.1

μA

V

mΩ

S

®

Power Stage

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge V

Gate to Source Charge

Gate to Drain “Miller” Charge

1326

Q1:

= 13 V, VGS = 0 V, f = 1 MHZ

V

DS

Q2:

= 13 V, VGS = 0 V, f = 1 MHZ

V

DS

Q1 Q2

Q1Q20.2

0.2

2175

342 574

78

118

0.9

1.0

1765 2895

455 765

115 180

2.9

3.2

pF

Ω

Q1 V

= 13 V, ID = 16 A, R

DD

Q2 V

= 13 V, ID = 18 A, R

DD

= 0V to 10 V

GS

= 0V to 4.5 V

GS

Q1 V

DD

I

= 16 A

D

Q2 V

DD

I

= 18 A

D

= 6 Ω

GEN

= 6 Ω

GEN

= 13 V,

Q1 Q2

7.7

9.51519

1.7310 10

19

34

24

49

1.4

2.21010

19

27

31

43

9

13

14

20

3.6

5.7

2.4

3.7

ns

nC

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

0.8

19 24

19

1.2

1.2 34

38

6

12 35

is determined

θCA

V

= 0 V, IS = 16 A (Note 2)

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

by the user's board design.

Source-Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

GS

V

= 0 V, IS = 18 A (Note 2)

GS

Q1 I

= 16 A, di/dt = 100 A/s

F

Q2 I

= 18 A, di/dt = 300 A/s

F

Q1 Q2

is guaranteed by design while R

θJC

ns

nC

FDMS3615S PowerTrench

V

®

Power Stage

a. 55 °C/W when mounted on

2

pad of 2 oz copper

a 1 in

c. 125 °C/W when mounted on a minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

4. EAS of 38 mJ is based on starting TJ = 25 oC; N-ch: L = 0.3 mH, IAS = 16 A, VDD = 23 V, VGS = 10 V. 100% test at L= 0.3 mH, IAS = 14.6 A.

5. EAS of 98 mJ is based on starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 14 A, VDD = 23 V, VGS = 10 V. 100% test at L= 0.3 mH, IAS = 21 A.

b. 55 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

d. 125 °C/W when mounted on a minimum pad of 2 oz copper

FDMS3615S PowerTrench

0.0 0.5 1.0 1.5

0

9

18

27

36

45

V

GS

= 6 V

V

GS

= 4 V

V

GS

= 10 V

V

GS

= 3 V

V

GS

= 3.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 9 18 27 36 45

0

2

4

6

8

VGS = 6 V

VGS = 3.5 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4 V

VGS = 3 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 16 A V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

2468

0

5

10

15

20

25

30

TJ = 125 oC

ID = 16 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

1234

0

9

18

27

36

45

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

50

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics (Q1 N-Channel) T

Figure 1.

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

Normali z e d O n - R esistance

vs Drain Current and Gate Voltage

®

Power Stage

Fig u re 3. Norma l ized O n Res i stanc e

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

FDMS3615S PowerTrench

0 5 10 15 20

0

2

4

6

8

10

ID = 16 A

V

DD

= 16 V

V

DD

= 10 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 13 V

0.1 1 10

50

100

1000

3000

f = 1 MHz V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

25

0.001 0.01 0.1 1 10 100

1

10

20

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

5

10

15

20

R

θJA

= 55 oC/W

V

GS

= 4.5 V

Limited by Package

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

A

, AMBIENT TEMPERATURE (

o

C)

0.01 0.1 1 10 100200

0.01

0.1

1

10

100

100 μs

DC

100 ms

10 ms

1 ms

1s

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE T

J

= MAX RATED

R

θJA

= 125

o

C/W

T

A

= 25

o

C

10s

10-410-310-210

-1

110

100 1000

0.5

1

10

100

1000

SINGLE PULSE R

θJA

= 125 oC/W

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics (Q1 N-Channel) T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25°C unless otherwise noted

J

Capacitance vs Drain

to Source Voltage

®

Power Stage

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

Figure 11. Forward Bias Safe

Op

erating Area

Figure 10.

Ma ximum Continuous D rai n

Current vs Ambient Temperature

Figure 12.

Si ngle Puls e Maximum

Power Dissipation