Fairchild FDMS3600S service manual

FDMS3600S

Q

Power 56

G1

D1

G2

S2

D1

PHASE (S1/D2)

S2

S2 S2 G2

D1

D1 D1

G1

Top Bottom

PHASE

Pin 1

PowerTrench® Power Stage

25 V Asymmetric Dual N-Channel MOSFET

Features

Q1: N-Channel

 Max r  Max r

Q2: N-Channel

 Max r  Max r

 Low inductance packaging shortens rise/fall times, resulting in

lower switching losses

 MOSFET integration enables optimum layout for lower circuit

inductance and reduced switch node ringing

 RoHS Compliant

= 5.6 mΩ at VGS = 10 V, ID = 15 A

DS(on)

= 8.1 mΩ at VGS = 4.5 V, ID = 14 A

DS(on)

= 1.6 mΩ at VGS = 10 V, ID = 30 A

DS(on)

= 2.4 mΩ at VGS = 4.5 V, ID = 25 A

DS(on)

General Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Applications

 Computing  Communications  General Purpose Point of Load  Notebook VCORE

August 2011

FDMS3600S PowerTrench

®

Power Stage

 Server

2

5 6 7 8

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

E

AS

P

D

TJ, T

STG

Drain to Source Voltage 25 25 V Gate to Source Voltage (Note 3) ±20 ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 30 40

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 40 100 Single Pulse Avalanche Energy 50 Power Dissipation for Single Operation TA = 25 °C 2.2 Power Dissipation for Single Operation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 65 155

C

= 25 °C 15

A

= 25 °C 1.0

A

1a

4 1a 1c

1

30

200

2.5

1.0

4 3 2 1

1b

5 1b 1d

A

mJ

W

Thermal Characteristics

R

θJA θJA

R

θJC

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

Thermal Resistance, Junction to Ambient 57 Thermal Resistance, Junction to Ambient 125 Thermal Resistance, Junction to Case 3.5 2

22OA

N9OC

FDMS3600S Power 56 13 ” 12 mm 3000 units

1

1a

1c

1b

50

1d

120

°C/WR

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FDMS3600S PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

ΔBV ΔT

I

DSS

I

GSS

DSS

DSS J

= 250 μA, VGS = 0 V

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

D

I

= 1 mA, VGS = 0 V

D

ID = 250 μA, referenced to 25 °C I

= 10 mA, referenced to 25 °C

D

Zero Gate Voltage Drain Current VDS = 20 V, V Gate to Source Leakage Current,

Forward

V

= 20 V, VDS= 0 V

GS

= 0 V

Q1Q225

25

Q1 Q2

V

20 18

500 100

100

mV/°C

1

I

On Characteristics

V

GS(th)

ΔV ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance

= VDS, ID = 250 μA

GS

V

= VDS, ID = 1 mA

GS

ID = 250 μA, referenced to 25 °C I

= 10 mA, referenced to 25 °C

D

= 10 V, ID = 15 A

V

GS

V

= 4.5 V, ID = 14 A

GS

V

= 10 V , ID = 15 A , TJ = 125 °C

GS

V

= 10 V, ID = 30 A

GS

V

= 4.5 V, ID = 25 A

GS

V

= 10 V , ID = 30 A , TJ = 125 °C

GS

V

= 5 V, ID = 15 A

DS

V

= 5 V, ID = 30 A

DS

Q1Q21.111.8

1.5

Q1 Q2

4.3

Q1

6.2

5.9

1.3

Q2

1.7

1.8

Q1 Q2

67

171

2.7

3

-6

-5

mV/°C

5.6

8.1

8.7

1.6

2.4

2.7

μA μA

nA nA

V

mΩ

S

®

Power Stage

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

Q1:

= 13 V, VGS = 0 V, f = 1 MHZ

V

DS

Q2:

= 13 V, VGS = 0 V, f = 1 MHZ

V

DS

Q1 Q2

Q1Q20.2

0.2

1264 4042

1207

1680 5375

340

450

1605

58

14890220

0.6

0.9

2 3

pF

Ω

7.91316 23

2

5.31011

19 38

34 60

1.8

3.91010

19 59

27

27 82

9

13 38

3.9

11

2.4

5.8

ns

nC

Q1:

= 13 V, ID = 15 A, R

V

DD

Q2:

= 13 V, ID = 30 A, R

V

DD

= 0 V to 10 V

GS

= 0 V to 4.5 V

GS

= 6 Ω

GEN

= 6 Ω

GEN

Q1 V

= 13 V,

DD

I

= 15 A

D

Q2 VDD = 13 V, I

= 30 A

D

Q1 Q2

2

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FDMS3600S PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

0.8

V

= 0 V, IS = 15 A (Note 2)

V

SD

t

rr

Q

rr

Notes: 1: R

θJA

by the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

a. 57 °C/W when mounted on

2

pad of 2 oz copper

a 1 in

c. 125 °C/W when mounted on a minimum pad of 2 oz copper

GS

V

= 0 V, IS = 30 A (Note 2)Q1Q2

GS

Q1

= 15 A, di/dt = 100 A/μs

I

F

Q2 I

= 30 A, di/dt = 300 A/μs

F

Q1 Q2

θJC

b. 50 °C/W when mounted on a 1 in

d. 120 °C/W when mounted on a minimum pad of 2 oz copper

is guaranteed by design while R

2

pad of 2 oz copper

1.2

0.8

1.2

213234

51

6.63613

58

is determined

θCA

ns

nC

V

®

Power Stage

2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3: As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. 4: EAS of 50 mJ is based on starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 10 A, VDD = 23 V, VGS = 10 V. 100% test at L=0.3 mH, IAS = 15 A. 5: EAS of 200 mJ is based on starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 20 A, VDD = 23 V, VGS = 10 V. 100% test at L=0.3 mH, IAS = 30 A.

3

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FDMS3600S PowerTrench

0.0 0. 2 0.4 0.6 0.8 1.0

0

10

20

30

40

VGS = 4.5 V

VGS = 3.5 V

V

GS

= 3 V

VGS = 4 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 10203040

0

1

2

3

4

5

6

VGS = 3 V

VGS = 3.5 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4 V

VGS = 4.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 15 A V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TE MPERA TU RE (

o

C)

246810

0

5

10

15

20

25

TJ = 125 oC

ID = 15 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTA GE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

1234

0

10

20

30

40

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

40

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics (Q1 N-Channel) T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norma lized O n - R e s i s t a n ce

vs Drain Current and Gate Voltage

®

Power Stage

Fig u r e 3. Nor m a lized On R esistan c e

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

4

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FDMS3600S PowerTrench

0 5 10 15 20

0

2

4

6

8

10

ID = 15 A

V

DD

= 16 V

V

DD

= 13 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 10 V

0.1 1 10

10

100

1000

2000

25

f = 1 MHz V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.01 0.1 1 10 100

1

10

20

TJ = 100 oC

TJ = 25 oC

T

J

= 125

o

C

t

AV

, TIME IN AVALANCHE ( ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

20

40

60

80

Limited by Pack ag e

V

GS

= 4.5 V

R

θJC

= 3.5 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

0.01 0.1 1 10 100

0.01

0.1

1

10

100

DC

100 ms

10 ms

1 ms

1s

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE T

J

= MAX RATED

R

θJA

= 125

o

C/W

T

A

= 25

o

C

10s

100 μs

200

10-410-310-210

-1

110

100 1000

0.5

1

10

100

1000

SINGLE PULSE R

θJA

= 125

o

C/W

T

A

= 25

o

C

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics (Q1 N-Channel) T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

Capa c i t a nce v s D r ain

to Source Voltage

®

Power Stage

Figure 9.

Unc l a mp e d I nd u c ti v e

Switching Capability

Figure 11. Forward Bias Safe

Operating Area

Figure 10. Maximum Continuous Drain

Current vs Case Temperature

Figure 12.

5

Single Pulse Maximum

Power Dissipation

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