tm
FDMS3572
N-Channel UltraFET Trench® MOSFET
80V, 22A, 16.5mΩ
Features
Max r
Max r
Typ Qg = 28nC at VGS = 10V
Low Miller Charge
Optimized efficiency at high frequencies
RoHS Compliant
= 16.5mΩ at VGS = 10V, ID = 8.8A
DS(on)
= 24mΩ at VGS = 6V, ID = 8.4A
DS(on)
General Description
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r
these devices are ideal for high frequency DC to DC converters.
DS(on)
Application
DC - DC Conversion
FDMS3572 N-Channel UltraFET Trench
February 2007
, low ESR, low total and Miller gate charge,
®
MOSFET
Pin 1
S
D
D
Power 56 (Bottom view)
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage 80 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 22
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 50
Power Dissipation TC = 25°C 78
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
S
S
G
D
5
D
6
7
D
D
D
D
= 25°C unless otherwise noted
A
C
A
A
8
= 25°C 48
= 25°C (Note 1a) 8.8
= 25°C (Note 1a) 2.5
G
4
S
3
S
2
S
1
Thermal Characteristics
A
W
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.6
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS3572 FDMS3572 Power 56 13’’ 12mm 3000 units
©2007 Fairchild Semiconductor Corporation
FDMS3572 Rev.C1
°C/W
1
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FDMS3572 N-Channel UltraFET Trench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 80 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 64V, V
Gate to Source Leakage Current VGS = ±20V, V
ID = 250µA, referenced to 25°C 76 mV/°C
= 0V 1 µA
GS
= 0V ±100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2 3.2 4 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance VDS = 10V, ID = 8.8A 23 S
ID = 250µA, referenced to 25°C -11 mV/°C
VGS = 10V, ID = 8.8A 13.5 16.5
VGS = 10V, ID = 8.8A, TJ = 125°C 22.2 29
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 275 365 pF
Reverse Transfer Capacitance 78 120 pF
VDS = 40V, VGS = 0V,
f = 1MHz
1870 2490 pF
Gate Resistance f = 1MHz 1.3 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 13 24 ns
Turn-Off Delay Time 24 39 ns
VDD = 40V, ID = 8.8A
VGS = 10V, R
GEN
= 6Ω
11 20 ns
Fall Time 12 22 ns
Total Gate Charge at 10V V
Gate to Source Gate Charge 9 nC
= 0V to 10V
GS
VDD = 40V
ID = 8.8A
28 40 nC
Gate to Drain “Miller” Charge 8 nC
mΩVGS = 6V, ID = 8.4A 18.3 24
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
the user's board design.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDMS3572 Rev.C1
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 71 107 nC
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
IF = 8.8A, di/dt = 100A/µs
a. 50°C/W when mounted on
2
a 1 in
pa d o f 2 oz co pp er
= 0V, IS = 8.8A (Note 2) 0.8 1.2 V
GS
43 65 ns
is guaranteed by design while R
θJC
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
2
is determined by
θCA
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FDMS3572 N-Channel UltraFET Trench
Typical Characteristics T
60
VGS = 10V
50
VGS = 8V
40
30
20
, DRAIN CURRENT (A)
D
10
I
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
2.0
1.8
On Region Characteristics Figure 2.
ID = 8.8A
V
= 10V
GS
1.6
1.4
1.2
NORMALIZED
1.0
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
vs Junction Temperature
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
= 25°C unless otherwise noted
J
VGS = 6V
VGS = 5V
3.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 6V
V
GS
NORMALIZED
3.0
2.5
2.0
VGS = 5V
1.5
1.0
V
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 102030405060
ID, DRAIN CURRENT(A)
GS
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
50
(mΩ)
40
30
, DRAIN TO
DS(on)
r
SOURCE ON-RESISTANCE
ID = 9A
20
10
45678910
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4.
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 150oC
o
T
= 25
C
J
Source Voltage
= 8V
= 10V
®
MOSFET
50
40
30
20
10
, DRAIN CURRENT (A)
D
I
0
FDMS3572 Rev.C1
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 150oC
TJ = 25oC
TJ = -55oC
234567
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
3
100
V
= 0V
GS
10
1
, REVERSE DRAIN CURRENT (A)
S
I
1E-3
0.01
TJ = 150oC
0.1
TJ = -55oC
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
TJ = 25oC
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FDMS3572 N-Channel UltraFET Trench
Typical Characteristics T
10
8
6
4
2
, GATE TO SOURCE VOLTAGE(V)
0
GS
V
0102030
Qg, GATE CHARGE(nC)
Figure 7.
10
9
8
7
Gate Charge Characteristics Figure 8.
6
5
4
3
2
, AVALANCHE CURRENT(A)
AS
I
1
0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE(ms)
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
50
10
1
OPERATION IN THIS
0.1
AREA MAY BE
LIMITED BY r
, DRAIN CURRENT (A)
D
I
0.01
1E-3
0.1 1 10 100
DS(on)
VDS, DRAIN to SOURCE VOLTAGE (V)
F ig u re 1 1. F or w ar d B ia s Sa f e
Operating Area
V
VDD = 40V
TJ = 125oC
SINGLE PULSE
T
= MAX RATED
J
= 25OC
T
A
= 25°C unless otherwise noted
J
= 30V
DD
VDD = 50V
TJ = 25oC
100us
1ms
10ms
100ms
1s
10s
DC
300
4000
C
iss
1000
C
oss
C
CAPACITANCE (pF)
f = 1MHz
100
50
= 0V
V
GS
0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
rss
C a p a c i t a n c e v s D r a i n
to Source Voltage
50
40
V
= 10V
GS
30
V
= 6V
GS
20
, DRAIN CURRENT (A)
D
I
10
R
= 1.6oC/W
θJC
0
25 50 75 100 125 150
Limited by Package
TC, CASE TEMPERATURE (oC)
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
2000
1000
VGS = 10V
100
FOR TEMPERATURES
o
ABOVE 25
CURRENT AS FOLLOWS:
I = I
25
C DERATE PEAK
150 TA–
-----------------------
125
10
1
), PEAK TRANSIENT POWER (W)
PK
0.3
P(
10
-3
Figure 12.
SINGLE PULSE
-2
-1
10
10
t, PULSE WIDTH (s)
0
10
10110
S i n g l e P u l s e M a x i m u m
Power Dissipation
TA = 25oC
2
®
MOSFET
3
10
FDMS3572 Rev.C1
4
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FDMS3572 N-Channel UltraFET Trench
Typical Characteristics T
2
DUTY CYCLE -DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.01
1E-3
1E-4
0.1
0.05
0.02
0.01
SINGLE PULSE
-3
10
-2
10
θJA
IMPEDANCE, Z
NORMALIZED THERMAL
= 25°C unless otherwise noted
J
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
1/t2
x R
+ T
θJA
θJA
A
2
10
3
10
®
MOSFET
FDMS3572 Rev.C1
5
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FDMS3572 N-Channel UltraFET Trench
®
MOSFET
FDMS3572 Rev.C1
6
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FDMS3572 N-Channel UItraFET Trench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain
life, or (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FDMS3572 Rev. C1
Rev. I22
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