Fairchild FDMS3572 service manual

tm

FDMS3572
N-Channel UltraFET Trench® MOSFET

80V, 22A, 16.5mΩ
Features

 Max r

 Max r

 Typ Qg = 28nC at VGS = 10V

 Low Miller Charge

 Optimized efficiency at high frequencies

 RoHS Compliant

= 16.5mΩ at VGS = 10V, ID = 8.8A

DS(on)

= 24mΩ at VGS = 6V, ID = 8.4A

DS(on)

General Description

UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r
these devices are ideal for high frequency DC to DC converters.

DS(on)

Application

 DC - DC Conversion

FDMS3572 N-Channel UltraFET Trench

February 2007

, low ESR, low total and Miller gate charge,

®

MOSFET

Pin 1

S

D

D

Power 56 (Bottom view)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 80 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC = 25°C 22

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 50

Power Dissipation TC = 25°C 78

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

S

S

G

D

5

D

6

7

D

D

D

D

= 25°C unless otherwise noted

A

C

A

A

8

= 25°C 48

= 25°C (Note 1a) 8.8

= 25°C (Note 1a) 2.5

G

4

S

3

S

2

S

1

Thermal Characteristics

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.6

Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS3572 FDMS3572 Power 56 13’’ 12mm 3000 units

©2007 Fairchild Semiconductor Corporation
FDMS3572 Rev.C1

°C/W

1

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FDMS3572 N-Channel UltraFET Trench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 80 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current VDS = 64V, V

Gate to Source Leakage Current VGS = ±20V, V

ID = 250µA, referenced to 25°C 76 mV/°C

= 0V 1 µA

GS

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2 3.2 4 V

Gate to Source Threshold Voltage
Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance VDS = 10V, ID = 8.8A 23 S

ID = 250µA, referenced to 25°C -11 mV/°C

VGS = 10V, ID = 8.8A 13.5 16.5

VGS = 10V, ID = 8.8A, TJ = 125°C 22.2 29

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 275 365 pF

Reverse Transfer Capacitance 78 120 pF

VDS = 40V, VGS = 0V,
f = 1MHz

1870 2490 pF

Gate Resistance f = 1MHz 1.3 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 13 24 ns

Turn-Off Delay Time 24 39 ns

VDD = 40V, ID = 8.8A
VGS = 10V, R

GEN

= 6Ω

11 20 ns

Fall Time 12 22 ns

Total Gate Charge at 10V V

Gate to Source Gate Charge 9 nC

= 0V to 10V

GS

VDD = 40V
ID = 8.8A

28 40 nC

Gate to Drain “Miller” Charge 8 nC

mΩVGS = 6V, ID = 8.4A 18.3 24

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

θJA

the user's board design.

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

FDMS3572 Rev.C1

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge 71 107 nC

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

IF = 8.8A, di/dt = 100A/µs

a. 50°C/W when mounted on

2

a 1 in

pa d o f 2 oz co pp er

= 0V, IS = 8.8A (Note 2) 0.8 1.2 V

GS

43 65 ns

is guaranteed by design while R

θJC

b. 125°C/W when mounted on a
minimum pad of 2 oz copper

2

is determined by

θCA

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FDMS3572 N-Channel UltraFET Trench

Typical Characteristics T

60

VGS = 10V

50

VGS = 8V

40

30

20

, DRAIN CURRENT (A)

D

10

I

0

01234

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

2.0

1.8

On Region Characteristics Figure 2.

ID = 8.8A
V

= 10V

GS

1.6

1.4

1.2

NORMALIZED

1.0

0.8

0.6

DRAIN TO SOURCE ON-RESISTANCE

-75 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

vs Junction Temperature

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

= 25°C unless otherwise noted

J

VGS = 6V

VGS = 5V

3.5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

VGS = 6V

V

GS

NORMALIZED

3.0

2.5

2.0

VGS = 5V

1.5

1.0

V

DRAIN TO SOURCE ON-RESISTANCE

0.5
0 102030405060

ID, DRAIN CURRENT(A)

GS

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

50

(mΩ)

40

30

, DRAIN TO

DS(on)

r

SOURCE ON-RESISTANCE

ID = 9A

20

10

45678910

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4.

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

TJ = 150oC

o

T

= 25

C

J

Source Voltage

= 8V

= 10V

®

MOSFET

50

40

30

20

10

, DRAIN CURRENT (A)

D

I

0

FDMS3572 Rev.C1

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

TJ = 150oC

TJ = 25oC

TJ = -55oC

234567

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

3

100

V

= 0V

GS

10

1

, REVERSE DRAIN CURRENT (A)

S

I

1E-3

0.01

TJ = 150oC

0.1

TJ = -55oC

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

Forward Voltage vs Source Current

TJ = 25oC

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