Fairchild FDMS3500 service manual

May 2009

FDMS3500 N-Channel Power Trench

FDMS3500

N-Channel Power Trench® MOSFET

75V, 49A, 14.5m:

Features

 Max r

 Advanced Package and Silicon combination for low r

 MSL1 robust package design

 100% UIL Tested

 RoHS Compliant

= 14.5m: at VGS = 10V, ID = 11.5A

DS(on)

= 16.3m: at VGS = 4.5V, ID = 10A

DS(on)

Top

Power 56

DS(on)

Bottom

S

D

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

®

process that has

Application

 DC - DC Conversion

S

Pin 1

G

5

D

6

D

7

D

8

D

G

4

S

3

S

2

1

S

tm

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

TJC

R

TJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS3500 FDMS3500 Power 56 13’’ 12mm 3000 units

Drain to Source Voltage 75 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25°C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 100

Single Pulse Avalanche Energy (Note 3) 384 mJ

Power Dissipation TC = 25°C 96

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 1.3

Thermal Resistance, Junction to Ambient (Note 1a) 50

1

= 25°C unless otherwise noted

A

= 25°C 57

C

= 25°C (Note 1a) 9.2

A

= 25°C (Note 1a) 2.5

A

1

A

W

°C/W

www.fairchildsemi.com

FDMS3500 N-Channel Power Trench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV 'T

I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 75 V

Breakdown Voltage Temperature Coefficient

I

= 250PA, referenced to 25°C 71 mV/°C

D

Zero Gate Voltage Drain Current VGS= 0V, VDS = 60V, 1 PA

Gate to Source Leakage Current VGS = ±20V, VDS= 0V ±100 nA

On Characteristics

V

GS(th)

'V 'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 1.0 1.8 3.0 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

= 250PA, referenced to 25°C -6.8 mV/°C

I

D

V

= 10V, ID = 11.5A 11.1 14.5

GS

= 4.5V, ID = 10A 12.8 16.3

GS

= 10V, ID = 11.5A, TJ = 125°C 17.6 23.0

V

GS

Forward Transconductance VDD = 5V, ID = 11.5A 56 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 225 300 pF

Reverse Transfer Capacitance 120 175 pF

V

= 40V, VGS = 0V,

DS

f = 1MHz

3580 4765 pF

Gate Resistance f = 1MHz 1.2 :

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Turn-On Delay Time

Rise Time 918ns

Turn-Off Delay Time 48 77 ns

V

= 40V, ID = 11.5A,

DD

= 10V, R

V

GS

GEN

= 6:

Fall Time 611ns

g

gs

gd

Total Gate Charge VGS= 0 V t o 1 0 V

Total Gate Charge VGS = 0V to 5V 34 48 nC

Gate to Source Charge 9.9 nC

V

DD

I

D

= 40V,

= 11.5A

Gate to Drain “Miller” Charge 11.6 nC

16 29 ns

65 91 nC

m:V

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

the user's board design.

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

3. Starting T

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 45 72 nC

= 25°C, L = 3mH, IAS = 16A, VDD = 75V, VGS = 10V

J

V

GS

V

GS

= 11.5A, di/dt = 100A/Ps

I

F

a. 50°C/W when mounted on a

2

pad of 2 oz copper.

1 in

= 0V, IS= 11.5A (Note 2) 0.8 1.3

= 0V, IS= 2.1A (Note 2) 0.7 1.2

38 60 ns

is guaranteed by design while R

TJC

b. 125°C/W when mounted on a minimum pad of 2 oz copper.

2

TCA

www.fairchildsemi.com

V

is determined by

FDMS3500 N-Channel Power Trench

Typical Characteristics T

100

VGS = 10V

80

VGS = 4.5V

60

40

, DRAIN CURRENT (A)

20

D

I

0

0123

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance

2.0

ID = 11.5A

1.8

V

= 10V

GS

1.6

1.4

1.2

NORMALIZED

1.0

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (

J

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

VGS = 4V

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

= 25°C unless otherwise noted

J

VGS = 3.5V

VGS = 3V

o

C)

3.0

VGS = 3V

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

2.5

2.0

VGS = 3.5V

V

= 4V

V

GS

=4.5V

V

= 10V

GS

1.5

NORMALIZED

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 020406080100

I

, DRAIN CURRENT(A)

D

vs Drain Current and Gate Voltage

40

(m:)

30

20

DRAIN TO

,

DS(on)

r

10

SOURCE ON-RESISTANCE

0

246810

ID= 11.5A

V

, GATE TO SOURCE VOLTAGE (V)

GS

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

TJ= 125oC

TJ= 25oC

F i g u re 4 . O n - R e si s t a n c e v s Ga t e t o

Source Voltage

®

MOSFET

100

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

80

V

= 5V

DS

60

TJ= 150oC

40

, DRAIN CURRENT (A)

20

D

I

0

012345

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

1

TJ = 25oC

TJ = -55oC

100

V

= 0V

GS

10

TJ= 150oC

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

3

www.fairchildsemi.com