Fairchild FDMS3016DC service manual

FDMS3016DC

Bottom Top

Pin 1

Power 56

D D

N-Channel Dual CoolTM PowerTrench® MOSFET

30 V, 49 A, 6.0 mΩ

Features

 Dual CoolTM Top Side Cooling PQFN package  Max r  Max r  High performance technology for extremely low r  RoHS Compliant

= 6.0 mΩ at VGS = 10 V, ID = 12 A

DS(on)

= 9.0 mΩ at VGS = 4.5 V, ID = 10 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench Advancements in both silicon and Dual Cool technologies have been combined to offer the lowest r while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Applications

 Synchronous Rectifier for DC/DC Converters  Telecom Secondary Side Rectification  High End Server/Workstation

July 2010

process.

package

DS(on)

FDMS3016DC N-Channel Dual Cool

PowerTrench

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

dv/dt Peak Diode Recovery dv/dt (Note 4) 1.3 V/ns P

, T

STG

Drain to Source Voltage 30 V Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200 Single Pulse Avalanche Energy (Note 3) 72 mJ

Power Dissipation TC = 25 °C 60 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

= 25 °C 78

= 25 °C (Note 1a) 18

= 25 °C (Note 1a) 3.3

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

3016 FDMS3016DC Dual Cool

Power 56 13’’ 12 mm 3000 units

MOSFET

°C/W

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FDMS3016DC N-Channel Dual Cool

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 24 V, V Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 17 mV/°C

= 0 V 1 μA

= 0 V ±100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.9 3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C -6 mV/°C

= 10 V, ID = 12 A 5.0 6.0

= 4.5 V, ID = 10 A 7.0 9.0

= 10 V, ID = 12 A, TJ = 125 °C 7.5 9.4

Forward Transconductance VDS = 5 V, ID = 12 A 44 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 513 685 pF Reverse Transfer Capacitance 87 135 pF

= 15 V, VGS = 0 V,

f = 1 MHz

Gate Resistance 0.9 Ω

1038 1385 pF

Switching Characteristics

d(on)

d(off)

Q Q Q Q

Turn-On Delay Time Rise Time 310ns Turn-Off Delay Time 19 35 ns

= 15 V, ID = 12 A,

= 10 V, R

GEN

= 6 Ω

Fall Time 210ns

g g gs gd

Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 4.5 V 7.6 10.6 nC Gate to Source Gate Charge 3 nC

= 12 A

= 15 V,

Gate to Drain “Miller” Charge 2.5 nC

918ns

16 23 nC

mΩV

PowerTrench

MOSFET

Drain-Source Diode Characteristics

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 9 18 nC

= 0 V, IS = 12 A (Note 2) 0.82 1.3

= 0 V, IS = 1.9 A (Note 2) 0.73 1.2

= 12 A, di/dt = 100 A/μs

25 45 ns

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Thermal Characteristics

FDMS3016DC N-Channel Dual Cool

θJC

θJA

NOTES:

1. R

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

θJA

by the user's board design.

Thermal Resistance, Junction to Case (Top Source) 5.7 Thermal Resistance, Junction to Case (Bottom Drain) 2.1 Thermal Resistance, Junction to Ambient (Note 1a) 38 Thermal Resistance, Junction to Ambient (Note 1b) 81 Thermal Resistance, Junction to Ambient (Note 1c) 27 Thermal Resistance, Junction to Ambient (Note 1d) 34 Thermal Resistance, Junction to Ambient (Note 1e) 16 Thermal Resistance, Junction to Ambient (Note 1f) 19 Thermal Resistance, Junction to Ambient (Note 1g) 26 Thermal Resistance, Junction to Ambient (Note 1h) 61 Thermal Resistance, Junction to Ambient (Note 1i) 16 Thermal Resistance, Junction to Ambient (Note 1j) 23 Thermal Resistance, Junction to Ambient (Note 1k) 11 Thermal Resistance, Junction to Ambient (Note 1l) 13

a. 38 °C/W when mounted on a 1 in2 pad of 2 oz copper

is guaranteed by design while R

θJC

b. 81 °C/W when mounted on a minimum pad of 2 oz copper

is determined

θCA

°C/W

PowerTrench

MOSFET

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Alumi num He at Si nk, 1 in j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41 B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. EAS of 72 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V.

4. ISD ≤ 12 A, di/dt ≤ 100 A/μs, VDD ≤ BV

, Starting TJ = 25 oC.

DSS

pad of 2 oz copper

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