Fairchild FDMS3008SDC service manual

FDMS3008SDC

4 3 2 1

5 6 7 8

D D

Bottom Top

Pin 1

Power 56

N-Channel Dual CoolTM PowerTrench® SyncFET

30 V, 49 A, 2.6 mΩ Features

 Dual CoolTM Top Side Cooling PQFN package  Max r  Max r  High performance technology for extremely low r  SyncFET Schottky Body Diode  RoHS Compliant

= 2.6 mΩ at VGS = 10 V, ID = 28 A

DS(on)

= 3.3 mΩ at VGS = 4.5 V, ID = 22 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench Advancements in both silicon and Dual Cool technologies have been combined to offer the lowest while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.

Applications

 Synchronous Rectifier for DC/DC Converters  Telecom Secondary Side Rectification  High End Server/Workstation Vcore Low Side

August 2011

process.

package

DS(on)

FDMS3008SDC N-Channel Dual Cool

PowerTrench

SyncFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

dv/dt Peak Diode Recovery dv/d t (Note 5) 2.3 V/ns P

, T

STG

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

Drain to Source Voltage 30 V Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200 Single Pulse Avalanche Energy (Note 3) 112 mJ

Power Dissipation TC = 25 °C 78 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

3008S FDMS3008SDC Dual Cool

= 25°C unless otherwise noted

= 25 °C 140

= 25 °C (Note 1a) 29

= 25 °C (Note 1a) 3.3

Power 56 13’’ 12 mm 3000 units

°C/W

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FDMS3008SDC N-Channel Dual Cool

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage I Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current V Gate to Source Leakage Current, Forward V

= 1 mA, VGS = 0 V30 V

= 10 mA, referenced to 25°C 13 mV/°C

= 24 V, V

= 20 V, V

= 0 V500μA

= 0 V 100nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, I Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance V

= 10 mA, referenced to 25°C -5 mV/°C

= 10 V, ID = 28 A 1.82.6

= 4.5 V, ID = 22 A2.73.3

= 10 V, ID = 28 A, T

= 5 V, ID = 28 A 144 S

= 1 mA 1.2 1.9 3.0 V

= 125°C 2.4 3.6

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 1115 1485 pF Reverse Transfer Capacitance 80 120 pF Gate Resistance 0.7 Ω

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 4.7 10 ns Turn-Off Delay Time 33 53 ns Fall Time 310ns Total Gate Charge V Total Gate Charge V Gate to Source Charge 9.6 nC Gate to Drain “Miller” Charge 4.3 nC

= 15 V, VGS = 0 V,

f = 1MHz

= 15 V, ID = 28 A,

= 10 V, R

= 0 V to 10 V

= 0 V to 4.5 V2129nC

GEN

= 6 Ω

= 28 A

= 15 V,

3400 4520 pF

15 27 ns

46 64 nC

mΩV

PowerTrench

SyncFET

Drain-Source Diode Characteristics

Source-Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 39 62 nC

= 0 V, IS = 2 A (Note 2) 0.4 0.8

= 0 V, IS = 28 A (Note 2) 0.8 1.2

= 28 A, di/dt = 300 A/μs

32 51 ns

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Thermal Characteristics

FDMS3008SDC N-Channel Dual Cool

θJC

θJA

NOTES:

1. R

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

θJA

by the user's board design.

Thermal Resistance, Junction to Case (Top Source) 3.5 Thermal Resistance, Junction to Case (Bottom Drain) 1.6 Thermal Resistance, Junction to Ambient (Note 1a) 38 Thermal Resistance, Junction to Ambient (Note 1b) 81 Thermal Resistance, Junction to Ambient (Note 1c) 27 Thermal Resistance, Junction to Ambient (Note 1d) 34 Thermal Resistance, Junction to Ambient (Note 1e) 16 Thermal Resistance, Junction to Ambient (Note 1f) 19 Thermal Resistance, Junction to Ambient (Note 1g) 26 Thermal Resistance, Junction to Ambient (Note 1h) 61 Thermal Resistance, Junction to Ambient (Note 1i) 16 Thermal Resistance, Junction to Ambient (Note 1j) 23 Thermal Resistance, Junction to Ambient (Note 1k) 1 1 Thermal Resistance, Junction to Ambient (Note 1l) 13

a. 38 °C/W when mounted on

a 1 in

pad of 2 oz copper

is guaranteed by design while R

θJC

b. 81 °C/W when mounted on a minimum pad of 2 oz copper

is determined

θCA

°C/W

PowerTrench

SyncFET

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink , 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminu m He at Si nk, mi n im u m pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. EAS of 112 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 15 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 33.4 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

5. ISD ≤ 28 A, di/dt ≤ 210 A/μs, VDD ≤ BV

pad of 2 oz copper

, Starting TJ = 25 oC.

DSS

pad of 2 oz copper

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