Fairchild FDMS3006SDC service manual

FDMS3006SDC

4

3

2

1

5

6

7

8

S

S

S

G

D

D

D

D

Bottom

Top

Pin 1

S

G

S

S

D

D

D

D

Power 56

N-Channel Dual CoolTM Power Trench® SyncFET

30 V, 49 A, 1.9 mΩ

Features

 Dual CoolTM Top Side Cooling PQFN package

 Max r

 Max r

 High performance technology for extremely low r

 SyncFET Schottky Body Diode

 RoHS Compliant

= 1.9 mΩ at VGS = 10 V, ID = 30 A

DS(on)

= 2.7 mΩ at VGS = 4.5 V, ID = 26 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
Advancements in both silicon and Dual Cool
technologies have been combined to offer the lowest
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance. This device has the
added benefit of an efficient monolithic Schottky body diode.

Applications

 Synchronous Rectifier for DC/DC Converters

 Telecom Secondary Side Rectification

 High End Server/Workstation Vcore Low Side

TM

August 2011

®

process.

TM

package

r

DS(on)

FDMS3006SDC N-Channel Dual Cool

TM

Power Trench

®

SyncFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 5) 1.8 V/ns

P

D

, T

T

J

STG

Drain to Source Voltage 30 V

Gate to Source Voltage (Note 4) ±20 V

Drain Current -Continuous (Package limited) TC = 25 °C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200

Single Pulse Avalanche Energy (Note 3) 144 mJ

Power Dissipation TC = 25 °C 89

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

A

= 25 °C 179

C

= 25 °C (Note 1a) 34

A

= 25 °C (Note 1a) 3.3

A

A

W

Thermal Characteristics

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

Package Marking and Ordering Information

©2011 Fairchild Semiconductor Corporation
FDMS3006SDC Rev.C

Device Marking Device Package Reel Size Tape Width Quantity

Thermal Resistance, Junction to Case (Top Source) 2.7

Thermal Resistance, Junction to Case (Bottom Drain) 1.4

Thermal Resistance, Junction to Ambient (Note 1a) 38

Thermal Resistance, Junction to Ambient (Note 1b) 81

Thermal Resistance, Junction to Ambient (Note 1i) 16

Thermal Resistance, Junction to Ambient (Note 1j) 23

Thermal Resistance, Junction to Ambient (Note 1k) 11

3006S FDMS3006SDC Dual Cool

TM

Power 56 13’’ 12 mm 3000 units

1

°C/W

www.fairchildsemi.com

TM

FDMS3006SDC N-Channel Dual Cool

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current VDS = 24 V, V

Gate to Source Leakage Current, Forward VGS = 20 V, V

I

= 10 mA, referenced to 25 °C 16 mV/°C

D

= 0 V 500 μA

GS

= 0 V 100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.7 3.0 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

I

= 10 mA, referenced to 25 °C -5 mV/°C

D

V

= 10 V, ID = 30 A 1.3 1.9

GS

= 4.5 V, ID = 26 A 1.9 2.7

GS

= 10 V, ID = 30 A, TJ = 125 °C 1.8 2.7

V

GS

Forward Transconductance VDS = 5 V, ID = 30 A 167 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

g

Q

gs

Q

gd

Input Capacitance

Output Capacitance 1630 2170 pF

Reverse Transfer Capacitance 102 155 pF

V

= 15 V, VGS = 0 V,

DS

f = 1 MHz

4305 5725 pF

Gate Resistance 0.8 Ω

Turn-On Delay Time

Rise Time 5.9 12 ns

Turn-Off Delay Time 39 62 ns

= 15 V, ID = 30 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

16 29 ns

Fall Time 3.5 10 ns

Total Gate Charge VGS = 0 V to 10 V

Total Gate Charge VGS = 0 V to 4.5 V 26 36 nC

Gate to Source Gate Charge 12 nC

V

DD

I

= 30 A

D

= 15 V,

57 80 nC

Gate to Drain “Miller” Charge 5.3 nC

mΩV

TM

Power Trench

®

SyncFET

TM

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

©2011 Fairchild Semiconductor Corporation
FDMS3006SDC Rev.C

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 58 93 nC

V

= 0 V, IS = 2 A (Note 2) 0.4 0.8

GS

= 0 V, IS = 30 A (Note 2) 0.8 1.2

V

GS

= 30 A, di/dt = 300 A/μs

I

F

2

38 61 ns

V

www.fairchildsemi.com

Thermal Characteristics

FDMS3006SDC N-Channel Dual Cool

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

Thermal Resistance, Junction to Case (Top Source) 2.7

Thermal Resistance, Junction to Case (Bottom Drain) 1.4

Thermal Resistance, Junction to Ambient (Note 1a) 38

Thermal Resistance, Junction to Ambient (Note 1b) 81

Thermal Resistance, Junction to Ambient (Note 1c) 27

Thermal Resistance, Junction to Ambient (Note 1d) 34

Thermal Resistance, Junction to Ambient (Note 1e) 16

Thermal Resistance, Junction to Ambient (Note 1f) 19

Thermal Resistance, Junction to Ambient (Note 1g) 26

Thermal Resistance, Junction to Ambient (Note 1h) 61

Thermal Resistance, Junction to Ambient (Note 1i) 16

Thermal Resistance, Junction to Ambient (Note 1j) 23

Thermal Resistance, Junction to Ambient (Note 1k) 11

Thermal Resistance, Junction to Ambient (Note 1l) 13

a. 38 °C/W when mounted on

2

pa d of 2 oz c opp er

a 1 in

is guaranteed by design while R

θJC

b. 81 °C/W when mounted on
a minimum pad of 2 oz copper

is determined by

θCA

°C/W

TM

Power Trench

®

SyncFET

c. Still air, 13x8.1x5.8mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper

d. Still air, 13x8.1x5.8mm Aluminum Heat Sink, minimum pad of 2 oz copper

e. Still air, 25x25x10mm Aavid Thermalloy part#10-6327-01 Heat Sink, 1 in2 pad of 2 oz copper

f. Still air, 25x25x10mm Aavid Thermalloy part#10-6327-01 Heat Sink, minimum pad of 2 oz copper

g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper

h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper

i. 200FPM Airflow, 13x8.1x5.8mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper

j. 200FPM Airflow, 13x8.1x5.8mm Aluminum Heat Sink, minimum pad of 2 oz copper

k. 200FPM Airflow, 25x25x10mm Aavid Thermalloy part#10-6327-01 Heat Sink, 1 in2 pad of 2 oz copper

l. 200FPM Airflow, 25x25x10mm Aavid Thermalloy part#10-6327-01 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

of 144 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 17 A, VDD = 27 V, V

3. E

AS

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

5. ISD ≤ 30 A, di/dt ≤ 165 A/μs, VDD ≤ BV

, Starting TJ = 25 oC.

DSS

= 10 V. 100% test at L = 0.1 mH, IAS = 39.2 A.

GS

TM

©2011 Fairchild Semiconductor Corporation
FDMS3006SDC Rev.C

3

www.fairchildsemi.com