Fairchild FDMS2734 service manual

FDMS2734

4

3

2

1

5

6

7

8

®

N-Channel UltraFET Trench

250V, 14A, 122m:
Features

 Max r

 Max r

 Low Miller Charge

 Optimized efficiency at high frequencies

 RoHS Compliant

= 122m: at VGS = 10V, ID = 2.8A

DS(on)

= 130m: at VGS = 6V, ID = 1.7A

DS(on)

MOSFET

General Description

UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r
these devices are ideal for high frequency DC to DC converters.

Application

 DC - DC Conversion

DS(on)

FDMS2734 N-Channel UltraFET Trench

March 2011

, low ESR, low total and Miller gate charge,

®

MOSFET

Pin 1

S

D

D

Power 56 (Bottom view)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 250 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Silicon limited) TC = 25°C 14

-Pulsed 30

Power Dissipation TC = 25°C 78

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

S

S

G

D

D

D

D

D

= 25°C unless otherwise noted

A

D

= 25°C (Note 1a) 2.8

A

= 25°C (Note 1a) 2.5

A

G

S

S

S

Thermal Characteristics

R

TJC

R

TJA

Thermal Resistance, Junction to Case 1.6

Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

A -Continuous T

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDMS2734 FDMS2734 Power 56 13’’ 12mm 3000 units

©2011 Fairchild Semiconductor Corporation
FDMS2734 Rev.C1

1

www.fairchildsemi.com

FDMS2734 N-Channel UltraFET Trench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

'BV

DSS

'T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

'V

GS(th)

'T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 250 V

Breakdown Voltage Temperature
Coefficient

I

= 250PA, referenced to 25°C 250 mV/°C

D

Zero Gate Voltage Drain Current VDS = 200V, 1 PA

Gate to Source Leakage Current VGS = ±20V, V

= 0V ±100 nA

GS

(Note 2)

Gate to Source Threshold Voltage VGS = VDS, ID = 250PA234V

Gate to Source Threshold Voltage
Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance VDS = 10V, ID = 2.8A 11 S

= 250PA, referenced to 25°C -11 mV/°C

I

D

V

= 10V, ID = 2.8A 105 122

GS

= 6V, ID = 1.7A 110 130

GS

= 10V, ID = 2.8A TJ = 125°C 217 258

V

GS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 80 110 pF

Reverse Transfer Capacitance 25 40 pF

V

= 100V, VGS = 0V,

DS

f = 1MHz

1775 2365 pF

Gate Resistance f = 1MHz 0.9 :

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 10 20 ns

Turn-Off Delay Time 36 58 ns

VDD = 125V, ID = 2.8A
V

GS

= 10V, R

GEN

= 6:

Fall Time 12 22 ns

Total Gate Charge at 10V V

Gate to Source Gate Charge 7 nC

= 0V to 10V

GS

V

DD

I

D

= 125V

= 2.8A

Gate to Drain “Miller” Charge 9 nC

22 36 ns

30 42 nC

m:V

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:
1: R

TJA

by the user's board design.

2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

FDMS2734 Rev.C1

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge 214 321 nC

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

I

F

a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper

= 0V, IS = 2.8A (Note 2) 0.75 1.20 V

GS

= 2.8A, di/dt = 100A/Ps

2

79 119 ns

is guaranteed by design while R

TJC

b. 125°C/W when mounted on a
minimum pad of 2 oz copper

TCA

www.fairchildsemi.com

is determined

FDMS2734 N-Channel UltraFET Trench

012345

0

5

10

15

20

25

30

VGS = 6V

VGS = 5V

VGS = 4.5V

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

VGS = 10V

I

D

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

0 5 10 15 20 25 30

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

ID, DRAIN CURRENT(A)

V

GS

= 6V

VGS = 5V

VGS = 4.5V

V

GS

= 10V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

ID = 2.8A

V

GS

= 10V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

TJ, JUNCTION TEMPERATURE (oC)

46810

80

160

240

320

400

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

TJ = 150oC

T

J

= 25

o

C

ID = 7A

r

DS(on)

, DRAIN TO

SOURCE ON-RESISTANCE

(m:)

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

TJ = -55oC

TJ = 25oC

TJ = 150oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

1E-3

0.01

0.1

1

10

TJ = -55oC

TJ = 25oC

TJ = 150oC

V

GS

= 0V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

20

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

®

MOSFET

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

vs Junction Temperature

16

12

8

4

0

23456

FDMS2734 Rev.C1

Figure 5. Transfer Characteristics

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

Figure 6.

S o u r ce t o D r a i n Di o d e

Forward Voltage vs Source Current

3

www.fairchildsemi.com