Fairchild FDMS2672 service manual

April 2012

FDMS2672 N-Channel UltraFET Trench MOSFET

FDMS2672 N-Channel UltraFET Trench MOSFET

200V, 20A, 77m: Features

 Max r

 Low Miller Charge

 RoHS Compliant

= 77m: at VGS = 10V, ID = 3.7A

DS(on)

= 88m: at VGS = 6V, ID = 3.5A

DS(on)

Pin 1

S

G

General Description

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for r these devices are ideal for high frequency DC to DC converters.

DS(on)

Application

 DC - DC Conversion

D

5

D

6

7

D

, low ESR, low total and Miller gate charge,

G

4

S

3

S

2

tm

D

Power 56 (Bottom view)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 200 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Silicon limited) TC = 25°C 20

-Pulsed 20

Single Pulse Avalanche Energy (Note 3) 33.8 mJ Power Dissipation TC = 25°C 78

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

D

= 25°C unless otherwise noted

A

8

= 25°C (Note 1a) 3.7

A

= 25°C (Note 1a) 2.5

A

S

1

Thermal Characteristics

R

TJC

R

TJA

Thermal Resistance, Junction to Case 1.6

Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS2672 FDMS2672 Power 56 13’’ 12mm 3000 units

A -Continuous T

W

°C/W

72 Rev.C

1

www.fairchildsemi.com

FDMS2672 N-Channel UltraFET Trench MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

'BV

DSS

'T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

'V

GS(th)

'T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 200 V

Breakdown Voltage Temperature Coefficient

I

= 250PA, referenced to 25°C 210 mV/°C

D

Zero Gate Voltage Drain Current VDS = 160V 1 PA

Gate to Source Leakage Current VGS = ±20V, V

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 2 3.1 4 V

Gate to Source Threshold Voltage Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance VDS = 10V, ID = 3.7A 14 S

= 250PA, referenced to 25°C -10 mV/°C

I

D

V

= 10V, ID = 3.7A 64 77

GS

= 6V, ID = 3.5A 69 88

GS

= 10V, ID = 3.7A TJ = 125°C 129 156

V

GS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 95 125 pF

Reverse Transfer Capacitance 30 45 pF

V

= 100V, VGS = 0V,

DS

f = 1MHz

Gate Resistance

1740 2315 pF

0.1

1

5

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 11 22 ns

Turn-Off Delay Time 36 57 ns

VDD = 100V, ID = 3.7A V

GS

= 10V, R

GEN

= 6:

Fall Time 10 20 ns

Total Gate Charge at 10V V

Gate to Source Gate Charge 7 nC

= 0V to 10V

GS

V

DD

I

D

= 100V

= 3.7A

Gate to Drain “Miller” Charge 8 nC

22 34 ns

30 42 nC

m:V

:

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

TJA

the user's board design.

2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

3: EAS of 33.8mJ is based on starting TJ = 25 C, L = 3mH, IAS = 4.75A, VDD = 25V, V

FDMS2672 Rev.C1

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge 238 357 nC

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

a. 50°C/W when mounted on

2

pa d o f 2 oz co pp er

a 1 in

°

= 0V, IS = 3.7A (Note 2) 0.8 1.2 V

GS

= 3.7A, di/dt = 100A/Ps

I

F

= 10V.

GS

2

70 105 ns

is guaranteed by design while R

TJC

b. 125°C/W when mounted on a minimum pad of 2 oz copper

is determined by

TCA

www.fairchildsemi.com

FDMS2672 N-Channel UltraFET Trench MOSFET

:

Typical Characteristics T

40

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

30

20

10

, DRAIN CURRENT (A)

D

I

Figure 1.

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

NORMALIZED

0.8

0.6

0.4

DRAIN TO SOURCE ON-RESISTANCE

-75 -50 -25 0 25 50 75 100 125 150

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

VGS = 10V

0

01234

VDS, DRAIN TO SOURCE VOLTAGE (V)

On Region Characteristics Figure 2.

ID = 3.7A

= 10V

V

GS

TJ, JUNCTION TEMPERATURE (oC)

vs Junction Temperature

= 25°C unless otherwise noted

J

VGS = 8V

VGS = 6V

VGS = 5V

3.0

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

2.5

VGS = 5V

VGS = 6V

2.0

1.5

NORMALIZED

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 0 10203040

ID, DRAIN CURRENT(A)

V

= 8V

GS

V

= 10V

GS

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

200

)

ID = 4.5A

175

(m

150

125

, DRAIN TO

100

DS(on)

r

75

SOURCE ON-RESISTANCE

50

45678910

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4.

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

TA = 150oC

TA = 25oC

Source Voltage

25

20

15

10

, DRAIN CURRENT (A)

D

I

FDMS2672 Rev.C1

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

TJ = 150oC

TJ = 25oC

TJ = -55oC

5

0

234567

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

40

V

= 0V

GS

10

TJ = 150oC

1

TJ = 25oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

1E-3

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55oC

Forward Voltage vs Source Current

3

www.fairchildsemi.com