Fairchild FDMS2572 service manual

tm

FDMS2572
N-Channel UltraFET Trench® MOSFET

150V, 27A, 47mΩ
Features

 Max r

 Max r

 Low Miller Charge

 Optimized efficiency at high frequencies

 UIS Capability (Single pulse and Repetitive pulse)

 RoHS Compliant

= 47mΩ at VGS = 10V, ID = 4.5A

DS(on)

= 53mΩ at VGS = 6V, ID = 4.5A

DS(on)

General Description

UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r
these devices are ideal for high frequency DC to DC converters.

DS(on)

Application

 Distributed Power Architectures and VRMs

 Primary Switch for 24V and 48V Systems

 High Voltage Synchronous Rectifier

FDMS2572 N-Channel UltraFET Trench

February 2007

, low ESR, low total and Miller gate charge,

®

MOSFET

Pin 1

S

D

D

Power 56 (Bottom view)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 150 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC = 25°C 27

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 30

Power Dissipation TC = 25°C 78

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

S

S

G

D

5

D

6

7

D

D

D

D

= 25°C unless otherwise noted

A

8

= 25°C 27

C

= 25°C (Note 1a) 4.5

A

= 25°C (Note 1a) 2.5

A

G

4

S

3

S

2

S

1

Thermal Characteristics

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.6

Thermal Resistance, Junction to Ambient (N ote 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS2572 FDMS2572 Power 56 13’’ 12mm 3000 units

©2007 Fairchild Semiconductor Corporation
FDMS2572 Rev.C2

°C/W

1

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FDMS2572 N-Channel UltraFET Trench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 150 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current VDS = 120V, V

Gate to Source Leakage Current VGS = ±20V, V

ID = 250µA, referenced to 25°C 180 mV/°C

= 0V 1 µA

GS

= 0V ±100 nA

DS

(Note 2)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2 3 4 V

Gate to Source Threshold Voltage
Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance VDS = 10V, ID = 4.5A 14 S

ID = 250µA, referenced to 25°C -9.8 mV/°C

VGS = 10V, ID = 4.5A 36 47

VGS = 10V, ID = 4.5A, TJ = 125°C 69 103

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 130 175 pF

Reverse Transfer Capacitance 30 45 pF

VDS = 75V, VGS = 0V,
f = 1MHz

1960 2610 pF

Gate Resistance f = 1MHz 1.3 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 8 16 ns

Turn-Off Delay Time 38 61 ns

VDD = 75V, ID = 1.0A
VGS = 10V, R

GEN

= 6Ω

11 20 ns

Fall Time 31 50 ns

Total Gate Charge at 10V V

Gate to Source Gate Charge 9 nC

= 0V to 10V

GS

VDD = 75V
ID = 4.5A

31 43 nC

Gate to Drain “Miller” Charge 7 nC

mΩVGS = 6V, ID = 4.5A 39 53

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

θJA

the user's board design.

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

FDMS2572 Rev.C2

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge 130 195 nC

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

IF = 4.5A, di/dt = 100A/µs

a.50°C/W when mounted on
a 1 in2 pad of 2 oz copper

= 0V, IS = 2.2A (Note 2) 0.7 1.0 V

GS

67 101 ns

is guaranteed by design while R

θJC

b. 125°C/W when mounted on a
minimum pad of 2 oz copper

2

is determined by

θCA

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FDMS2572 N-Channel UltraFET Trench

Typical Characteristics T

40

VGS = 10V

35

VGS = 6V

30

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

012345

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

NORMALIZED

0.8

0.6

0.4

0.2

DRAIN TO SOURCE ON-RESISTANCE

-75 -50 -25 0 25 50 75 100 125 150

On-Region Characteristics Figure 2.

ID = 4.5A

V

= 10V

GS

TJ, JUNCTION TEMPERATURE (oC)

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

60

PULSE DURATION = 300µs
DUTY CYCLE = 2.0 %MAX

50

PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX

VGS = 5.5V

= 25°C unless otherwise noted

J

VGS = 5V

VGS = 4.5V

1.8

VGS =4.5V

0 8 16 24 32 40

ID, DRAIN CURRENT(A)

NORMALIZED

1.6

1.4

1.2

1.0

0.8

DRAIN TO SOURCE ON-RESISTANCE

PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX

VGS =5V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

110

PULSE DURATION =300µs
DUTY CYCLE = 2.0%MAX

, DRAIN TO

DS(on)

r

100

90

(mOHM)

80

70

60

50

40

30

SOURCE ON-RESISTANCE

345678910

Figure 4.

ID = 4.5A

VGS, GATE TO SOURCE VOLTAGE (V)

O n - R es i s t a n c e vs G a t e t o

Source Voltage

60

V

= 0V

GS

10

VGS =5.5V

VGS = 6V

VGS = 10V

TJ = 150oC

o

T

= 25

J

®

MOSFET

C

40

30

20

, DRAIN CURRENT (A)

10

D

I

0

FDMS2572 Rev.C2

TJ = 125oC

TJ = 25oC

TJ =-55oC

123456

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

3

1

TJ = 125oC

0.1

0.01

1E-3

, REVERSE DRAIN CURRENT (A)

S

I

1E-4

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

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