Fairchild FDMS2508SDC service manual

FDMS2508SDC

4 3 2 1

5 6 7 8

D D

Bottom Top

Pin 1

Power 56

N-Channel Dual CoolTM PowerTrench® SyncFET

25 V, 49 A, 1.95 mΩ

Features

 Dual CoolTM Top Side Cooling PQFN package  Max r  Max r  High performance technology for extremely low r  SyncFET Schottky Body Diode

 RoHS Compliant

= 1.95 mΩ at VGS = 10 V, ID = 28 A

DS(on)

= 2.85 mΩ at VGS = 4.5 V, ID = 22 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench Advancements in both silicon and Dual Cool technologies have been combined to offer the lowest r while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.

Applications

 Synchronous Rectifier for DC/DC Converters  Telecom Secondary Side Rectification  High End Server/Workstation Vcore Low Side

July 2010

process.

package

DS(on)

FDMS2508SDC N-Channel Dual Cool

PowerTrench

SyncFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

dv/dt Peak Diode Recovery dv/dt (Note 5) 1.9 V/ns P

, T

STG

Drain to Source Voltage 25 V Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200 Single Pulse Avalanche Energy (Note 3) 144 mJ

Power Dissipation TC = 25 °C 78 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

= 25 °C 163

= 25 °C (Note 1a) 34

= 25 °C (Note 1a) 3.3

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

2508S FDMS2508SDC Dual Cool

Power 56 13’’ 12 mm 3000 units

°C/W

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FDMS2508SDC N-Channel Dual Cool

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 20 V, V Gate to Source Leakage Current, Forward VGS = 20 V, V

= 10 mA, referenced to 25 °C 22 mV/°C

= 0 V 500 μA

= 0 V 100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.7 3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 10 mA, referenced to 25 °C -5 mV/°C

= 10 V, ID = 28 A 1.6 1.95

= 4.5 V, ID = 22 A 2.3 2.85

= 10 V, ID = 28 A, TJ = 125 °C 2.4 3.0

Forward Transconductance VDS = 5 V, ID = 28 A 170 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 912 1215 pF Reverse Transfer Capacitance 172 260 pF

= 13 V, VGS = 0 V,

f = 1 MHz

Gate Resistance 1.2 2.1 Ω

3392 4515 pF

Switching Characteristics

d(on)

d(off)

Q Q Q Q

Turn-On Delay Time Rise Time 5.9 12 ns Turn-Off Delay Time 34 55 ns

= 13 V, ID = 28 A,

= 10 V, R

GEN

= 6 Ω

Fall Time 410ns

g g gs gd

Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 4.5 V 22 32 nC Gate to Source Gate Charge 9.9 nC

= 28 A

= 13 V,

Gate to Drain “Miller” Charge 5.3 nC

14 25 ns

49 69 nC

mΩV

PowerTrench

SyncFET

Drain-Source Diode Characteristics

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 27 43 nC

= 0 V, IS = 2 A (Note 2) 0.43 0.8

= 0 V, IS = 28 A (Note 2) 0.78 1.2

= 28 A, di/dt = 300 A/μs

28 45 ns

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Thermal Characteristics

FDMS2508SDC N-Channel Dual Cool

θJC

θJA

NOTES:

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

1. R

θJA

by the user's board design.

Thermal Resistance, Junction to Case (Top Source) 3.5 Thermal Resistance, Junction to Case (Bottom Drain) 1.6 Thermal Resistance, Junction to Ambient (Note 1a) 38 Thermal Resistance, Junction to Ambient (Note 1b) 81 Thermal Resistance, Junction to Ambient (Note 1c) 27 Thermal Resistance, Junction to Ambient (Note 1d) 34 Thermal Resistance, Junction to Ambient (Note 1e) 16 Thermal Resistance, Junction to Ambient (Note 1f) 19 Thermal Resistance, Junction to Ambient (Note 1g) 26 Thermal Resistance, Junction to Ambient (Note 1h) 61 Thermal Resistance, Junction to Ambient (Note 1i) 16 Thermal Resistance, Junction to Ambient (Note 1j) 23 Thermal Resistance, Junction to Ambient (Note 1k) 11 Thermal Resistance, Junction to Ambient (Note 1l) 13

a. 38 °C/W when mounted on a 1 in2 pad of 2 oz copper

is guaranteed by design while R

θJC

b. 81 °C/W when mounted on a minimum pad of 2 oz copper

is determined

θCA

°C/W

PowerTrench

SyncFET

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. E

of 144 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 17 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 25 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

5. ISD ≤ 28 A, di/dt ≤ 200 A/μs, VDD ≤ BV

, Starting TJ = 25 oC.

DSS

pad of 2 oz copper

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