FDMS039N08B
Bottom
Power 56
Top
D
D
D
D
G
S
S
S
Pin 1
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
FDMS039N08B N-Channel PowerTrench
September
N-Channel PowerTrench® MOSFET
80V, 100A, 3.9mΩ
Features
• R
• Low FOM R
• Low reverse recovery charge, Q
• Soft reverse recovery body diode
• Enables highly efficiency in synchronous rectification
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
= 3.2mΩ (Typ.)@ VGS = 10V, ID = 50A
DS(on)
DS(on) *QG
rr
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• Synchronous Rectification for Server / Telecom PSU
• Battery Charger and Battery Protection circuit
• DC motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
I
DM
E
AS
P
D
TJ, T
STG
Drain to Source Voltage 80 V
Gate to Source Voltage ±20 V
Drain Current
Drain Current - Pulsed (Note 2) 400 A
Single Pulsed Avalanche Energy (Note 3) 240 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
= 25oC unless otherwise noted*
C
- Continuous (TC = 25oC) 100
- Continuous (TA = 25oC) (Note 1) 19.4
(TC = 25oC) 104 W
(TA = 25oC) (Note 1) 2.5 W
Thermal Characteristics
Symbol Parameter
R
θJC
R
θJA
©2011 Fairchild Semiconductor Corporation
FDMS039N08B Rev. C2
Thermal Resistance, Junction to Case 1.2
Thermal Resistance, Junction to Ambient (Note 1) 50
1
Ratings
A
o
C
Units
o
C/W
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Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS039N08B FDMS039N08B Power 56 13 ” 12 mm 3000 units
FDMS039N08B N-Channel PowerTrench
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 80 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 64V, V
Gate to Body Leakage Current VGS = ±20V, V
ID = 250µA, Referenced to 25oC - 0.04 - V/oC
= 0V - - 1 µA
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250µA 2.5 - 4.5 V
Static Drain to Source On Resistance VGS = 10V, I
Forward Transconductance
VDS = 10V, ID = 50A (Note 4)
= 50A - 3.2 3.9 mΩ
D
- 100 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
(er) Engry Releted Output Capacitance VDS = 40V, VGS = 0V - 1646 - pF
oss
Q
g(tot)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance - 881 1170 pF
Reverse Transfer Capacitance - 15 - pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 34 - nC
Gate Charge Threshold to Plateau - 13 - nC
Gate to Drain “Miller” Charge - 16 - nC
VDS = 40V, VGS = 0V
f = 1MHz
VDS = 40V, ID = 50A
VGS = 0V to 10V
(Note 4,5)
- 5715 7600 pF
- 77 100 nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 25 60 ns
Turn-Off Delay Time - 48 106 ns
Turn-Off Fall Time - 17 44 ns
VDD = 40V, ID = 50A
VGS = 10V, R
(Note 4,5)
GEN
= 4.7Ω
ESR Equivalent Series Resistance Drain Open, f = 1MHZ - 1.2 - Ω
- 42 94 ns
®
MOSFET
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1.R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 0.3mH, IAS = 40A, Starting TJ = 25°C
4. Pulse Test: Pulse Width ≤ 300 µs, Duty cycle ≤ 2.0%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDMS039N08B Rev. C2
Maximum Continuous Drain to Source Diode Forward Current - - 100 A
Maximum Pulsed Drain to Source Diode Forward Current - - 400 A
Drain to Source Diode Forward Voltage VGS = 0V, I
Reverse Recovery Time
Reverse Recovery Charge - 80 - nC
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
= 50A - - 1.3 V
SD
VGS = 0V, I
= 50A, VDD = 40V
SD
dIF/dt = 100A/µs (Note 4)
is guaranteed by design while R
θJC
2
- 68 - ns
is determined by
θCA
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
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Typical Performance Characteristics
0.1 1 4
1
10
100
400
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
V
GS
= 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
3 4 5 6 7
1
10
100
400
-55oC
150oC
*Notes:
1. VDS = 10V
2. 250µs Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage[V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
1
10
100
400
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0 50 100 150 200 250 300 350
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[mΩ],
Drain-Source On-Resistance
ID, Drain Current [A]
0.1 1 10 80
5
10
100
1000
10000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. VGS = 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 20 40 60 80
0
2
4
6
8
10
*Note: ID = 50A
VDS = 16V
VDS = 40V
VDS = 64V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDMS039N08B N-Channel PowerTrench
®
MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDMS039N08B Rev. C2
3
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