Fairchild FDMS0312S service manual
FDMS0312S
N-Channel PowerTrench® SyncFETTM
30 V, 42 A, 4.9 m:
FDMS0312S N-Channel PowerTrench
July 2011
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 4.9 m: at V
DS(on)
= 5.8 m: at VGS = 4.5 V, ID = 14 A
DS(on)
Top
= 10 V, ID = 18 A
GS
Power 56
D
D
D
D
DS(on)
Bottom
General Description
The FDMS0312S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
while maintaining excellent switching performance. This
DS(on)
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Desktop
Pin 1
S
S
S
G
D
5
D
6
D
7
D
8
G
4
S
3
S
2
S
1
®
SyncFET
TM
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
TJC
R
TJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS0312S FDMS0312S Power 56 3 ’’ 12 mm 3000 units
©2011 Fairchild Semiconductor Corporation
FDMS0312S Rev.D
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC= 25 °C 42
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 90
Single Pulse Avalanche Energy (Note 3) 60 mJ
Power Dissipation TC = 25 °C 46
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case 2.7
Thermal Resistance, Junction to Ambient (Note 1a) 50
= 25 °C unless otherwise noted
A
= 25 °C 83
C
= 25 °C (Note 1a) 19
A
= 25 °C (Note 1a) 2.5
A
1
A
W
°C/W
www.fairchildsemi.com
FDMS0312S N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
'BV
DSS
'T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
'V
GS(th)
'T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
(Note 2)
I
= 10 mA, referenced to 25 °C 18 mV/°C
D
= 0 V 500 PA
GS
= 0 V 100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.9 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 10 mA, referenced to 25 °C -5 mV/°C
D
V
= 10 V, I
GS
= 4.5 V, ID = 14 A 4.7 5.8
GS
= 10 V, ID = 18 A, TJ= 125 °C 5 6.2
V
GS
= 18 A 3.6 4.9
D
Forward Transconductance VDS = 5 V, ID = 18 A 97 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 735 975 pF
Reverse Transfer Capacitance 90 135 pF
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
2120 2820 pF
Gate Resistance 1.1 2.2 :
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 510ns
Turn-Off Delay Time 28 44 ns
= 15 V, ID = 18 A,
V
DD
= 10 V, R
V
GS
GEN
= 6 :
12 21 ns
Fall Time 410ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 15 22 nC
Gate to Source Gate Charge 6.5 nC
V
DD
= 18 A
I
D
= 15 V,
33 46 nC
Gate to Drain “Miller” Charge 4.0 nC
m:V
®
SyncFET
TM
Drain-Source Diode Characteristics
V
= 0 V, IS= 2 A (Note 2) 0.48 0.7
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJA
the user's board design.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
of 60 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 11 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 16 A.
3. E
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS0312S Rev.D
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 26 42 nC
a. 50 °C/W when mounted on a
1 in2pad of 2 oz copper.
GS
= 0 V, IS= 18 A (Note 2) 0.80 1.2
V
GS
= 18 A, di/dt = 300 A/Ps
I
F
26 42 ns
is guaranteed by design while R
TJC
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
TCA
www.fairchildsemi.com2
V
FDMS0312S N-Channel PowerTrench
Typical Characteristics T
90
PULSE DURATION = 80 Ps
60
30
DRAIN CURRENT (A)
,
D
I
0
0.0 0.5 1.0 1.5 2.0
Figure 1.
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
On-Region Characteristics Figure 2.
1.5
ID = 18 A
1.4
V
= 10 V
GS
1.3
1.2
1.1
1.0
NORMALIZED
0.9
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.7
-75 -50 -25 0 25 50 75 100 125 150
T
,
JUNCTION TEMPERATURE
J
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
DUTY CYCLE = 0.5% MAX
= 25 °C unless otherwise noted
J
VGS = 3.5 V
VGS = 3 V
o
(
C
)
12
VGS = 3 V
10
8
VGS = 3.5 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
6
NORMALIZED
4
VGS = 4 V
VGS = 4.5 V
VGS = 10 V
2
DRAIN TO SOURCE ON-RESISTANCE
0
0306090
I
,
DRAIN CURRENT (A)
D
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
12
)
:
(m
10
ID= 18 A
8
DRAIN TO
,
6
DS(on)
r
4
SOURCE ON-RESISTANCE
2
246810
V
,
GATE TO SOURCE VOLTAGE (V)
GS
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
TJ= 125 oC
TJ= 25 oC
F i g u re 4 . O n - R e si s t a n c e v s G a t e t o
Source Voltage
®
SyncFET
TM
90
60
30
, DRAIN CURRENT (A)
D
I
0
FDMS0312S Rev.D
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
V
= 5 V
DS
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
VGS= 0 V
10
TJ= 125 oC
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DI ODE FORWARD VOLTAGE (V)
Figure 6.
TJ = 25 oC
TJ = -55 oC
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
www.fairchildsemi.com3
Loading...