Fairchild FDMS015N04B service manual
FDMS015N04B
N-Channel PowerTrench® MOSFET
40V, 100A, 1.5mW
FDMS015N04B N-Channel PowerTrench
February 2012
Features
• R
• Advanced Package and Silicon Combination for Low R
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
= 1.13mW (Typ.)@ VGS = 10V, ID = 50A
DS(on)
and High Efficiency
Top
Power 56
Bottom
D
D
D
D
DS(on)
S
S
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• Synchronous Rectification for Server / Telecom PSU
• Battery Charger and Battery Protection circuit
• DC motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
S
Pin 1
G
D
5
D
6
D
7
8
D
G
4
S
3
S
2
S
1
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
I
DM
E
AS
P
D
TJ, T
STG
Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current
Drain Current - Pulsed (Note 2) 400 A
Single Pulsed Avalanche Energy (Note 3) 526 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
= 25oC unless otherwise noted*
C
- Continuous (TC = 25oC) 100
- Continuous (TA = 25oC) (Note 1) 31.3
(TC = 25oC) 104 W
(TA = 25oC) (Note 1) 2.5 W
Thermal Characteristics
Symbol Parameter
R
qJC
R
qJA
©2012 Fairchild Semiconductor Corporation
FDMS015N04B Rev. C1
Thermal Resistance, Junction to Case 1.2
Thermal Resistance, Junction to Ambient (Note 1) 50
1
Ratings
A
o
C
Units
o
C/W
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Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS015N04B FDMS015N04B Power 56 13 ” 12 mm 3000 units
FDMS015N04B N-Channel PowerTrench
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DBV
DT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250mA, VGS = 0V 40 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 32V, V
Gate to Body Leakage Current VGS = ±20V, V
ID = 250mA, Referenced to 25oC - 37 - mV/oC
= 0V - - 1 mA
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250mA 2.0 - 4.0 V
Static Drain to Source On Resistance VGS = 10V, ID = 50A - 1.13 1.5 mW
Forward Transconductance
VDS = 5V, ID = 50A
- 171 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
(er) Engry Releted Output Capacitance VDS = 20V, VGS = 0V - 3896 - pF
oss
Q
g(tot)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance - 2795 3720 pF
Reverse Transfer Capacitance - 162 - pF
VDS = 20V, VGS = 0V
f = 1MHz
Total Gate Charge at 10V
Gate to Source Gate Charge - 26 - nC
Gate Charge Threshold to Plateau - 9 - nC
Gate to Drain “Miller” Charge - 16 - nC
VDS = 20V, ID = 50A
VGS = 0V to 10V
(Note 4)
- 6560 8725 pF
- 91 118 nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
ESR Equivalent Series Resistance Drain Open, f = 1MHZ - 1.4 - W
Turn-On Delay Time
Turn-On Rise Time - 24 58 ns
Turn-Off Delay Time - 71 152 ns
Turn-Off Fall Time - 26 62 ns
VDD = 20V, ID = 50A
VGS = 10V, R
(Note 4)
GEN
= 4.7W
- 34 78 ns
®
MOSFET
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1.R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
qJA
the user's board design.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 3mH, IAS = 18.72A, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
FDMS015N04B Rev. C1
Maximum Continuous Drain to Source Diode Forward Current - - 100 A
Maximum Pulsed Drain to Source Diode Forward Current - - 400 A
Drain to Source Diode Forward Voltage VGS = 0V, I
Reverse Recovery Time
Reverse Recovery Charge - 90 - nC
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
= 50A - - 1.3 V
SD
VGS = 0V, I
SD
= 50A
dIF/dt = 100A/ms
qJC
2
- 78 - ns
is guaranteed by design while R
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
qCA
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Typical Performance Characteristics
VGS, Gate-Source Voltage
[V]
400
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
500
400
*Notes:
1. VDS = 10V
2. 250ms Pulse Test
100
FDMS015N04B N-Channel PowerTrench
100
V
= 15.0V
GS
10.0V
, Drain Current[A]
D
I
10
0.1 1 2
*Notes:
1. 250ms Pulse Test
2. TC = 25oC
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
150oC
10
, Drain Current[A]
D
I
1
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
25oC
-55oC
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
1.3
1.2
VGS = 10V
1.1
[mW],
DS(ON)
R
VGS = 20V
1.0
Drain-Source On-Resistance
*Note: TC = 25oC
0.9
0 50 100 150 200 250 300
ID, Drain Current [A]
100
150oC
25oC
10
, Reverse Drain Current [A]
S
I
1
0.2 0.4 0.6 0.8 1.0 1.2
*Notes:
1. VGS = 0V
2. 250ms Pulse Test
VSD, Body Diode Forward Voltage [V]
®
MOSFET
FDMS015N04B Rev. C1
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10000
1000
*Note:
1. VGS = 0V
Capacitances [pF]
2. f = 1MHz
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
100
C
rss
50
0.1 1 10 40
= C
gd
gd
VDS, Drain-Source Voltage [V]
C
iss
C
oss
C
rss
10
8
VDS = 8V
VDS = 20V
VDS = 32V
6
4
, Gate-Source Voltage [V]
GS
V
2
*Note: ID = 50A
0
0 25 50 75 100
Qg, Total Gate Charge [nC]
3
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