Fairchild FDMQ8203 service manual
MLP 4.5x5
Top
Bottom
10
9
8
7
3
4
5
6
11
12
2
1
Q1 (Nch)Q4 (Nch)
Q3 (Pch)
Q2 (Pch)
D1,D2 to backside
D3,D4 to backside
(isolated from D1,D2)
G1
S1
S1
G2
S2
S2
G4
S4
S4
G3
S3
S3
S2
S1
G2
S2
S1
G1
S3
S4
G3
S3
S4
G4
Pin 1
D3/
D4
D3/
D4
D1/
D2
D1/
D2
FDMQ8203
GreenBridge
Dual N-Channel and Dual P-Channel PowerTrench
N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ
Features
Q1/Q4: N-Channel
Max r
Max r
Q2/Q3: P-Channel
Max r
Max r
Substantial efficiency benefit in PD solutions
RoHS Compliant
= 110 mΩ at VGS = 10 V, ID = 3 A
DS(on)
= 175 mΩ at VGS = 6 V, ID = 2.4 A
DS(on)
= 190 mΩ at VGS = -10 V, ID = -2.3 A
DS(on)
= 235 mΩ at VGS = -4.5 V, ID = -2.1 A
DS(on)
TM
Series of High-Efficiency Bridge Rectifiers
®
MOSFET
General Description
This quad mosfet solution provides ten-fold improvement in
power dissipation over diode bridge.
Application
High-Efficiency Bridge Rectifiers
FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench
December 2011
MOSFET Maximum Ratings T
Symbol Parameter Q1/Q4 Q2/Q3 Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Thermal Characteristics
R
θJA
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
©2011 Fairchild Semiconductor Corporation
FDMQ8203 Rev.C1
FDMQ8203 FDMQ8203 MLP4.5x5 13 ” 12 mm 3000 units
Drain to Source Voltage 100 -80 V
Gate to Source Voltage ±20 ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 6 -6
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 12 -10
Power Dissipation for Single Operation TC = 25 °C 22 37
Power Dissipation for Dual Operation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Ambient (Note 1a) 50
Thermal Resistance, Junction to Ambient (Note 1b) 160
= 25 °C unless otherwise noted
A
= 25 °C 10 -10
C
= 25 °C (Note 1a) 3.4 -2.6
A
= 25 °C (Note 1a) 2.5
A
1
®
MOSFET
A
W
°C/W
www.fairchildsemi.com
FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
= 250 μA, VGS = 0 V
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
D
I
= -250 μA, VGS = 0 V
D
ID = 250 μA, referenced to 25 °C
I
= -250 μA, referenced to 25 °C
D
V
= 80 V, V
DS
V
= -64 V, V
DS
GS
GS
= 0 V
= 0 V
Gate to Source Leakage Current VGS = ±20 V, VDS= 0 V
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
100
-80
V
72
-79
mV/°C
1
-1
±100
±100nAnA
I
On Characteristics
V
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
= VDS, ID = 250 μA
GS
V
= VDS, ID = -250 μA
GS
ID = 250 μA, referenced to 25 °C
I
= -250 μA, referenced to 25 °C
D
= 10 V, ID = 3 A
V
GS
V
= 6 V, ID = 2.4 A
GS
V
= 10 V, ID = 3 A , TJ = 125 °C
GS
V
= -10 V, ID = -2.3 A
GS
V
= -4.5 V, ID = -2.1 A
GS
V
= -10 V, ID = -2.3 A, TJ = 125 °C
GS
V
= 10 V, ID = 3 A
DS
V
= -10 V, ID = -2.3 A
DS
Q1/Q4
Q2/Q32-13-1.64-3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
-8
5
85
118
147
161
188
273
6
6
110
175
191
190
235
323
mV/°C
μA
μA
V
mΩ
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Q1/Q4:
= 50 V, VGS = 0 V, f = 1 MHZ
V
DS
Q2/Q3:
= -40 V, VGS = 0 V, f = 1 MHZ
V
DS
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
158
639
41
46
2.6
24
210
850
55
65
5
40
pF
pF
pF
®
MOSFET
Q1/Q4:
= 50 V, ID = 3 A,
V
DD
V
= 10 V, R
GS
GEN
Q2/Q3:
= -40 V, ID = -2.3 A,
V
DD
V
= -10 V, R
GS
GEN
VGS = 0 V to 10 V
VGS = 0 V to -10 V
VGS = 0 V to 5 V
VGS = 0 V to -4.5 V
= 6 Ω
= 6 Ω
Q1/Q4:
V
DD
I
D
Q2/Q3:
V
DD
I
D
= 50 V,
= 3 A
= -40 V,
= -2.3A
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
3.8
4.71010
1.3
2.81010
7.52215
35
1.9
2.71010
2.9
13
19
1.6
6.4310
0.8
1.6
0.8
2.6
ns
ns
ns
ns
5
nC
nC
nC
nC
©2011 Fairchild Semiconductor Corporation
FDMQ8203 Rev.C1
2
www.fairchildsemi.com
FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Type Min Typ Max Units
Drain-Source Diode Characteristics
V
= 0 V , IS = 3 A (Note 2)
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
by the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
a.
50 °C/W when mounted on a 1 in
pad of 2 oz copper, the board
designed Q1+Q3 or Q2+Q4.
GS
V
= 0 V, IS = -2.3 A (Note 2)
GS
Q1/Q4:
I
= 3 A, di/dt = 100 A/μs
F
Q2/Q3:
I
= -2.3 A, di/dt = 100 A/μs
F
2
Q1/Q4
Q2/Q3
0.86
-0.82
Q1/Q4
Q2/Q3
Q1/Q4
Q2/Q3
θJC
b.
160 °C/W when mounted on a
minimum pad of 2 oz copper, the
board designed Q1+Q3 or Q2+Q4.
is guaranteed by design while R
32
26
21
26
1.3
-1.3
52
42
34
42
θCA
is determined
V
ns
nC
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDMQ8203 Rev.C1
3
www.fairchildsemi.com
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