Fairchild FDML7610S service manual

FDML7610S

Dual N-Channel PowerTrench® MOSFET

N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ

Features

Q1: N-Channel

 Max r  Max r

Q2: N-Channel

 Max r  Max r

 RoHS Compliant

= 7.5 mΩ at VGS = 10 V, ID = 12 A

DS(on)

= 12 mΩ at VGS = 4.5 V, ID = 10 A

DS(on)

= 4.2 mΩ at VGS = 10 V, ID = 17 A

DS(on)

= 5.5 mΩ at VGS = 4.5 V, ID = 14 A

DS(on)

General Description

This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Applications

 Computing  Communications  General Purpose Point of Load

FDML7610S Dual N-Channel PowerTrench

April 2010

®

MOSFET

 Notebook V

D1

Pin 1

Top

MLP 3X4.5

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

P

D

TJ, T

STG

Drain to Source Voltage 30 30 V Gate to Source Voltage (Note 3) ±20 ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 30 28

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 40 40 Power Dissipation for Single Operation TA = 25 °C 2.1 T Operating and Storage Junction Temperature Range -55 to +150 °C

D1

G1

D1

S1/D2

S2

G2

Bottom

= 25 °C unless otherwise noted

A

S2

CORE

S2 S2 S2 D1

G2 G1

= 25 °C 40 60

C

= 25 °C 12

A

= 25 °C 0.8

A

1a

1a 1c

17

2.2

0.9

1b

1b 1d

Thermal Characteristics

R

θJA θJA

R

θJC

Thermal Resistance, Junction to Ambient 60 Thermal Resistance, Junction to Ambient 150 Thermal Resistance, Junction to Case 4 3.5

1a

1c

56

140

1b

1d

Package Marking and Ordering Information

D1 D1

A

W

°C/WR

Device Marking Device Package Reel Size Tape Width Quantity

FDML7610S FDML7610S MLP3X4.5 13 ” 12 mm 3000 units

1

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FDML7610S Dual N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

∆BV ∆T

I

DSS

I

GSS

DSS

DSS J

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 24 V, V

Gate to Source Leakage Current VGS = 20 V, VDS= 0 V

On Characteristics

V

GS(th)

∆V ∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance

ID = 250 µA, VGS = 0 V ID = 1 mA, VGS = 0 V

ID = 250 µA, referenced to 25 °C ID = 10 mA, referenced to 25 °C

= 0 V

GS

VGS = VDS, ID = 250 µA VGS = VDS, ID = 1 mA

ID = 250 µA, referenced to 25 °C ID = 10 mA, referenced to 25 °C

VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 10 A VGS = 10 V , ID = 12 A , TJ = 125 °C

VGS = 10 V, ID = 17 A VGS = 4.5 V, ID = 14 A VGS = 10 V , ID = 17 A , TJ = 125 °C

VDS = 5 V, ID = 12 A VDS = 5 V, ID = 17 A

Q1Q230

30

Q1 Q2

Q1Q21

Q1 Q2

Q1

Q2

Q1 Q2

1

15 14

1.8

6.0

8.5

8.3

3.2

4.1

4.1 63

86

V

mV/°C

1

500µAµA 100

100nAnA

3 3

-6

-5

mV/°C

7.5 12 12

4.2

5.5

6

V

mΩ

S

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

Q1: V

= 15 V, VGS = 0 V, f = 1 MHZ

DS

Q2: V

= 15 V, VGS = 0 V, f = 1 MHZ

DS

Q1: VDD = 15 V, ID = 12 A, VGS = 10 V, R

GEN

= 6 Ω

Q2: VDD = 15 V, ID = 17 A, VGS = 10 V, R

= 0 V to 10 V

GS

GEN

= 6 Ω

Q1 VDD = 15 V,

= 0 V to 4.5 V

GS

ID = 12 A

Q2 VDD = 15 V, ID = 17A

Q1 Q2

1315

1750

2960

3940

455

1135

600

1510

45

10070150

0.9

0.6

8.61318

2.5410

20 31

2.3

3.11010 20

43

9.32013

4.3

8.9

2.2

4.7

23

10 32

49

28 60

28

pF

Ω

ns

nC

2

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FDML7610S Dual N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

0.8

V

= 0 V, IS = 12 A (Note 2)

V

SD

t

rr

Q

rr

Notes:

1: R

θJA

by the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

is determined with the devic e mo un ted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

a. 60 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

c. 150 °C/W when mounted on a minimum pad of 2 oz copper

GS

V

= 0 V, IS = 17 A (Note 2)Q1Q2

GS

Q1 I

= 12 A, di/dt = 100 A/µs

F

Q2 I

= 17 A, di/dt = 300 A/µs

F

Q1 Q2

is guaranteed by design while R

θJC

b. 56 °C/W when mounted on a 1 in

d. 140 °C/W when mounted on a minimum pad of 2 oz copper

2

pad of 2 oz copper

0.8 273543

104018

1.2

56

64

θCA

is determined

V

ns

nC

®

MOSFET

2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

3

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FDML7610S Dual N-Channel PowerTrench

Typical Characteristics (Q1 N-Channel) T

40

30

20

10

, DRAIN CURRENT (A)

D

I

VGS = 3.5 V

0

0.0 0.5 1.0 1 .5 2.0

Figure 1.

1.6

ID = 12 A V

= 10 V

GS

1.4

1.2

NORMALIZED

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.8

-75 -50 -25 0 25 50 75 100 125 150

T

Fi g u r e 3. No r m alized O n Resist a n ce

vs Junction Temperature

VGS = 10 V

V

= 6

V

GS

VGS = 4.5 V

VGS = 4 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

V

,

DRAIN TO SOURCE VOLTAGE (V)

DS

On Region Characteristics Figure 2.

, JUNCTION TEMPERATURE (

J

o

C)

= 25 °C unless otherwise noted

J

4

3

VGS = 3.5 V

2

NORMALIZED

1

DRAIN TO SOURCE ON-RESISTANCE

0

0 10203040

I

,

D

Norm a l i z e d O n - R e sistance

vs Drain Current and Gate Voltage

40

)

Ω

m

(

30

20

DRAIN TO

,

DS(on)

r

10

SOURCE ON-RESISTANCE

0

246810

Figure 4.

TJ = 125 oC

TJ = 25 oC

V

,

GATE TO SOURCE VOLTAGE (V)

GS

On-Res istance vs Gate to

Source Voltage

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

VGS = 4 V

VGS = 6 V

DRAIN CURRENT (A)

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

ID = 12 A

V

GS

= 4.5 V

V

GS

= 10 V

®

MOSFET

40

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

30

V

= 5 V

DS

20

10

, DRAIN CURRENT (A)

D

I

0

1.5 2.0 2.5 3.0 3.5 4.0

TJ = 150 oC

TJ = 25 oC

VGS, GATE TO SOURCE V OLTAGE (V)

Figure 5. Transfer Characteristics

40

V

= 0 V

GS

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

TJ = -55 oC

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150 oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Diode

TJ = 25 oC

TJ = -55 oC

Forward Voltage vs Source Current

4

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