Fairchild FDMF6820A service manual

FDMF6820A — Extra-Small, High-Performance, High-Frequency DrMOS Module
FDMF6820A — Extra-Small, High-Performance, High-Frequency DrMOS Module
April 2012
Benefits
Compared to Conventional Discrete Solutions
Fully Optimized System Efficiency Clean Switching Waveforms with Minimal Ringing High-Current Handling
Features
Over 93% Peak-Efficiency High-Current Handling: 60A High-Performance PQFN Copper-Clip Package 3-State 3.3V PWM Input Driver Skip-Mode SMOD# (Low-Side Gate Turn Off) Input Thermal Warning Flag for Over-Temperature
Condition
Driver Output Disable Function (DISB# Pin) Internal Pull-Up and Pull-Down for SMOD# and
DISB# Inputs, Respectively
Fairchild PowerTrench
Clean Voltage Waveforms and Reduced Ringing
®
Technology MOSFETs for
Fairchild SyncFET™ (Integrated Schottky Diode)
Technology in Low-Side MOSFET
Integrated Bootstrap Schottky Diode Adaptive Gate Drive Timing for Shoot-Through
Protection
Under-Voltage Lockout (UVLO) Optimized for Switching Frequencies up to 1MHz Low-Profile SMD Package Fairchild Green Packaging and RoHS Compliance Based on the Intel
®
4.0 DrMOS Standard
Description
The XS™ DrMOS family is Fairchild’s next-generation, fully optimized, ultra-compact, integrated MOSFET plus driver power stage solution for high-current, high­frequency, synchronous buck DC-DC applications. The FDMF6820A integrates a driver IC, two power MOSFETs, and a bootstrap Schottky diode into a thermally enhanced, ultra-compact 6x6mm package.
With an integrated approach, the complete switching power stage is optimized with regard to driver and MOSFET dynamic performance, system inductance, and power MOSFET R Fairchild's high-performance PowerTrench technology, which dramatically reduces switch ringing, eliminating the need for snubber circuit in most buck converter applications.
A driver IC with reduced dead times and propagation delays further enhances the performance. A thermal warning function warns of a potential over-temperature situation. The FDMF6820A also incorporates a Skip Mode (SMOD#) for improved light-load efficiency. The FDMF6820A also provides a 3-state 3.3V PWM input for compatibility with a wide range of PWM controllers.
. XS™ DrMOS uses
DS(ON)
®
MOSFET
Applications
High-Performance Gaming Motherboards
  Compact Blade Servers, V-Core and Non-V-Core
DC-DC Converters
Desktop Computers, V-Core and Non-V-Core
DC-DC Converters
Workstations High-Current DC-DC Point-of-Load Converters Networking and Telecom Microprocessor Voltage
Regulators
Small Form-Factor Voltage Regulator Modules
Ordering Information
Part Number Current Rating Package Top Mark
FDMF6820A 60A 40-Lead, Clipbond PQFN DrMOS, 6.0mm x 6.0mm Package FDMF6820A
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMF6820A • Rev. 1.0.2
Typical Application Circuit
V5V
C
VDRV
DISB#
PWM Input
DISB#
PWM
OFF
ON
Open-Drain Output
SMOD#
THWN#
DrMOS Block Diagram
C
VIN
VCIN
VDRV
FDMF6820A
CGND
PGND
VIN
R
BOOT
PHASE
VSWH
BOOT
C
BOOT
Figure 1. Typical Application Circuit
VIN 3V ~ 16V
L
OUT
FDMF6820A — Extra-Small, High-Performance, High-Frequency DrMOS Module
V
OUT
C
OUT
VCIN
DISB#
PWM
THWN#
R
UP_PWM
R
DN_PWM
10µA
UVLO
V
CIN
Temp.
Sense
Input
3- State
Logic
VDRV
BOOT
VIN
Q1 HS Power MOSFET
GH
Logic
D
Level-Shift
Boot
GH
30kΩ
PHASE
Dead-Time
Control
V
DRV
GL
Logic
V
CIN
GL
30kΩ
VSWH
Q2 LS Power MOSFET
10µA
CGND
SMOD#
PGND
Figure 2. DrMOS Block Diagram
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMF6820A • Rev. 1.0.2 2
Pin Configuration
FDMF6820A — Extra-Small, High-Performance, High-Frequency DrMOS Module
Figure 3. Bottom View Figure 4. Top View
Pin Definitions
Pin # Name Description
When SMOD#=HIGH, the low-side driver is the inverse of the PWM input. When
1 SMOD#
2 VCIN IC bias supply. Minimum 1µF ceramic capacitor is recommended from this pin to CGND.
3 VDRV
4 BOOT
5, 37, 41 CGND IC ground. Ground return for driver IC.
6 GH For manufacturing test only. This pin must float; it must not be connected to any pin.
7 PHASE Switch node pin for bootstrap capacitor routing. Electrically shorted to VSWH pin.
8 NC
9 - 14, 42 VIN Power input. Output stage supply voltage.
15, 29 -
35, 43
16 – 28 PGND Power ground. Output stage ground. Source pin of the low-side MOSFET.
36 GL For manufacturing test only. This pin must float; it must not be connected to any pin.
38 THWN#
39 DISB#
40 PWM PWM signal input. This pin accepts a three-state 3.3V PWM signal from the controller.
VSWH
SMOD#=LOW, the low-side driver is disabled. This pin has a 10µA internal pull-up current source. Do not add a noise filter capacitor.
Power for the gate driver. Minimum 1µF ceramic capacitor is recommended to be connected as close as possible from this pin to CGND.
Bootstrap supply input. Provides voltage supply to the high-side MOSFET driver. Connect a bootstrap capacitor from this pin to PHASE.
No connect. The pin is not electrically connected internally, but can be connected to VIN for convenience.
Switch node input. Provides return for high-side bootstrapped driver and acts as a sense point for the adaptive shoot-through protection.
Thermal warning flag, open collector output. When temperature exceeds the trip limit, the output is pulled LOW. THWN# does not disable the module.
Output disable. When LOW, this pin disables the power MOSFET switching (GH and GL are held LOW). This pin has a 10µA internal pull-down current source. Do not add a noise filter capacitor.
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMF6820A • Rev. 1.0.2 3
Absolute Maximum Ratings
FDMF6820A — Extra-Small, High-Performance, High-Frequency DrMOS Module
Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol Parameter Min. Max. Unit
V
Supply Voltage Referenced to CGND -0.3 6.0 V
CIN
V
Drive Voltage Referenced to CGND -0.3 6.0 V
DRV
V
Output Disable Referenced to CGND -0.3 6.0 V
DISB#
V
PWM Signal Input Referenced to CGND -0.3 6.0 V
PWM
V
Skip Mode Input Referenced to CGND -0.3 6.0 V
SMOD#
V
Low Gate Manufacturing Test Pin Referenced to CGND -0.3 6.0 V
GL
V
Thermal Warning Flag Referenced to CGND -0.3 6.0 V
THWN#
V
Power Input Referenced to PGND, CGND -0.3 25.0 V
IN
V
Bootstrap Supply
BOOT
V
High Gate Manufacturing Test Pin
GH
V
PHASE Referenced to CGND -0.3 25.0 V
PHS
V
Switch Node Input
SWH
V
Bootstrap Supply
BOOT
I
THWN# Sink Current -0.1 7.0 mA
THWN#
I
O(AV)
θ
JPCB
Output Current
Junction-to-PCB Thermal Resistance 2.7 °C/W
(1)
TA Ambient Temperature Range -40 +125 °C
TJ Maximum Junction Temperature +150 °C
T
Storage Temperature Range -55 +150 °C
STG
ESD Electrostatic Discharge Protection
Note:
1. I
is rated using Fairchild’s DrMOS evaluation board, at TA = 25°C, with natural convection cooling. This rating
O(AV)
is limited by the peak DrMOS temperature, T layout. This rating can be changed with different application settings.
Referenced to VSWH, PHASE -0.3 6.0 V Referenced to CGND -0.3 25.0 V Referenced to VSWH, PHASE -0.3 6.0 V
Referenced to CGND -0.3 25.0 V
Referenced to PGND, CGND (DC Only) -0.3 25.0 V
Referenced to PGND, <20ns -8.0 28.0 V Referenced to VDRV 22.0 V
Referenced to VDRV, <20ns 25.0 V
f
=300kHz, VIN=12V, V
SW
fSW=1MHz, VIN=12V, VO=1.0V 55
Human Body Model, JESD22-A114 2000
Charged Device Model, JESD22-C101 2500
= 150°C, and varies depending on operating conditions and PCB
J
=1.0V 60
O
A
V
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol Parameter Min. Typ. Max. Unit
V
Control Circuit Supply Voltage 4.5 5.0 5.5 V
CIN
V
Gate Drive Circuit Supply Voltage 4.5 5.0 5.5 V
DRV
VIN Output Stage Supply Voltage 3.0 12.0 16.0
Note:
2. Operating at high V
can create excessive AC overshoots on the VSWH-to-GND and BOOT-to-GND nodes
IN
during MOSFET switching transients. For reliable DrMOS operation, VSWH-to-GND and BOOT-to-GND must
remain at or below the Absolute Maximum Ratings shown in the table above. Refer to the “Application Information” and “PCB Layout Guidelines” sections of this datasheet for additional information.
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMF6820A • Rev. 1.0.2 4
(2)
V
Electrical Characteristics
Typical values are VIN = 12V, V
Symbol Parameter Condition Min. Typ. Max. Unit
Basic Operation
IQ Quiescent Current IQ=I
V
UVLO Threshold V
UVLO
V
UVLO_Hys
PWM Input (V
R
R
V
V
V
V
t
D_HOLD-OFF
V
t
PWM-OFF_MIN
PWM Input (V
R
R
V
V
V
V
t
D_HOLD-OFF
V
t
PWM-OFF_MIN
DISB# Input
V
V
t
PD_DISBL
t
PD_DISBH
SMOD# Input
V
V
t
PD_SLGLL
t
PD_SHGLH
UVLO Hysteresis 0.4 V
= V
CIN
Pull-Up Impedance V
UP_PWM
Pull-Down Impedance V
DN_PWM
PWM High Level Voltage 1.88 2.25 2.61 V
IH_PWM
3-State Upper Threshold 1.84 2.20 2.56 V
TRI_HI
3-State Lower Threshold 0.70 0.95 1.19 V
TRI_LO
PWM Low Level Voltage 0.62 0.85 1.13 V
IL_PWM
= 5V ±10%)
DRV
3-State Shut-Off Time 160 200 ns
3-State Open Voltage 1.40 1.60 1.90 V
HiZ_PWM
PWM Minimum Off Time 120 ns
= V
CIN
Pull-Up Impedance V
UP_PWM
Pull-Down Impedance V
DN_PWM
PWM High Level Voltage 2.00 2.25 2.50 V
IH_PWM
3-State Upper Threshold 1.94 2.20 2.46 V
TRI_HI
3-State Lower Threshold 0.75 0.95 1.15 V
TRI_LO
PWM Low Level Voltage 0.66 0.85 1.09 V
IL_PWM
= 5V ±5%)
DRV
3-State Shut-Off Time 160 200 ns
3-State Open Voltage 1.45 1.60 1.80 V
HiZ_PWM
PWM Minimum Off Time 120 ns
High-Level Input Voltage 2 V
IH_DISB
Low-Level Input Voltage 0.8 V
IL_DISB
I
Pull-Down Current 10 µA
PLD
Propagation Delay
Propagation Delay
High-Level Input Voltage 2 V
IH_SMOD
Low-Level Input Voltage 0.8 V
IL_SMOD
I
Pull-Up Current 10 µA
PLU
Propagation Delay
Propagation Delay
= 5V, V
CIN
= 5V, and TA = T
DRV
VCIN+IVDRV
Rising 2.9 3.1 3.3 V
CIN
=5V 26 k
PWM
=0V 12 k
PWM
=5V 26 k
PWM
=0V 12 k
PWM
PWM=GND, Delay Between DISB# from HIGH to LOW to GL from HIGH to LOW
PWM=GND, Delay Between DISB# from LOW to HIGH to GL from LOW to HIGH
PWM=GND, Delay Between SMOD# from HIGH to LOW to GL from HIGH to LOW
PWM=GND, Delay Between SMOD# from LOW to HIGH to GL from LOW to HIGH
= +25°C unless otherwise noted.
J
, PWM=LOW or HIGH or Float 2 mA
25 ns
25 ns
10 ns
10 ns
FDMF6820A — Extra-Small, High-Performance, High-Frequency DrMOS Module
Continued on the following page…
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMF6820A • Rev. 1.0.2 5
Electrical Characteristics
Typical values are VIN = 12V, V
Symbol Parameter Condition Min. Typ. Max. Unit
Thermal Warning Flag
T
Activation Temperature 150 °C
ACT
T
Reset Temperature 135 °C
RST
R
Pull-Down Resistance I
THWN
250ns Timeout Circuit
t
D_TIMEOUT
High-Side Driver (fSW = 1000kHz, I
R
SOURCE_GH
R
t
D_DEADON
t
PD_PLGHL
t
PD_PHGHH
t
PD_TSGHH
Timeout Delay
Output Impedance, Sourcing Source Current=100mA 1
Output Impedance, Sinking Sink Current=100mA 0.8
SINK_GH
t
Rise Time GH=10% to 90% 10 ns
R_GH
t
Fall Time GH=90% to 10% 10 ns
F_GH
LS to HS Deadband Time
PWM LOW Propagation Delay
PWM HIGH Propagation Delay (SMOD# =0)
Exiting 3-State Propagation Delay
= 5V, V
CIN
= 5V, and TA = T
DRV
=5mA 30
PLD
SW=0V, Delay Between GH from HIGH to LOW and GL from LOW to HIGH
= 30A, TA = +25°C)
OUT
GL Going LOW to GH Going HIGH,
1.0V GL to 10% GH
PWM Going LOW to GH Going LOW, V
IL_PWM
to 90% GH
PWM Going HIGH to GH Going HIGH, V
IH_PWM
PWM (From 3-State) Going HIGH to GH Going HIGH, V
= +25°C unless otherwise noted.
J
to 10% GH (SMOD# =0, I
to 10% GH
IH_PWM
D_LS
>0)
250 ns
15 ns
20 30 ns
30 ns
30 ns
FDMF6820A — Extra-Small, High-Performance, High-Frequency DrMOS Module
Low-Side Driver (fSW = 1000kHz, I
R
SOURCE_GL
R
SINK_GL
t
t
t
D_DEADOFF
t
PD_PHGLL
t
PD_TSGLH
Output Impedance, Sourcing Source Current=100mA 1
Output Impedance, Sinking Sink Current=100mA 0.5
Rise Time GL=10% to 90% 30 ns
R_GL
Fall Time GL=90% to 10% 15 ns
F_GL
HS to LS Deadband Time
PWM-HIGH Propagation Delay
Exiting 3-State Propagation Delay
= 30A, TA = +25°C)
OUT
SW Going LOW to GL Going HIGH,
2.2V SW to 10% GL
PWM Going HIGH to GL Going LOW, V
IH_PWM
PWM (From 3-State) Going LOW to GL Going HIGH, V
to 90% GL
IL_PWM
to 10% GL
15 ns
10 25 ns
20 ns
Boot Diode
VF Forward-Voltage Drop IF=20mA 0.3 V
VR Breakdown Voltage IR=1mA 22 V
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMF6820A • Rev. 1.0.2 6
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