Fairchild FDME910PZT service manual

FDME910PZT

MicroFET 1.6x1.6 Thin

TOP

BOTTOM

Pin 1

D

G

D

S

D

D

5

1

6

2

3

4

D

D

S

D

D

G

Bottom Drain Contact

P-Channel PowerTrench® MOSFET

-20 V, -8 A, 24 mΩ
Features

 Max r
 Max r
 Max r
 Low profile: 0.55 mm maximum in the new package MicroFET

1.6x1.6 Thin

 HBM ESD protection level > 2 kV typical (Note 3)
 Free from halogenated compounds and antimony oxides
 RoHS Compliant

= 24 mΩ at VGS = -4.5 V, ID = -8 A

DS(on)

= 31 mΩ at VGS = -2.5 V, ID = -7 A

DS(on)

= 45 mΩ at VGS = -1.8 V, ID = -6 A

DS(on)

General Description

This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance and zener
diode protection against ESD. The MicroFET 1.6x1.6 Thin
package offers exceptional thermal performance for its physical
size and is well suited to switching and linear mode applications.

FDME910PZT P-Channel PowerTrench

May 2012

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Thermal Characteristics

R

θJA

R

θJA

Package Marking and Ordering Information

©2012 Fairchild Semiconductor Corporation
FDME910PZT Rev.C

Device Marking Device Package Reel Size Tape Width Quantity

Drain to Source Voltage -20 V
Gate to Source Voltage ±8 V

-Continuous TA = 25°C (Note 1a) -8

-Pulsed -32
Power Dissipation TA = 25°C (Note 1a) 2.1
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Ambient (Note 1a) 60
Thermal Resistance, Junction to Ambient (Note 1a) 175

E91 FDME910PZT MicroFET 1.6x1.6 Thin 7 ’’ 8

= 25 °C unless otherwise noted

A

A

= 25°C (Note 1b) 0.7

A

W

°C/W

mm 5000 units

1

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FDME910PZT P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -20 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = -16 V, V
Gate to Source Leakage Current VGS = ±8 V, V

I

= -250 μA, referenced to 25 °C -16 mV/°C

D

= 0 V -1 μA

GS

= 0 V ±10 μA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -0.4 -0.6 -1.5 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= -250 μA, referenced to 25 °C 2.7 mV/°C

D

= -4.5 V, ID = -8 A 20 24

V

GS

V

= -2.5 V, ID = -7 A 25 31

GS

= -1.8 V, ID = -6 A 32 45

V

GS

= -4.5 V, ID = -8 A,TJ = 125°C 26 36

V

GS

Forward Transconductance VDD = -5 V, ID = -8 A 38 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 236 355 pF
Reverse Transfer Capacitance 218 330 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Rise Time 11 20 ns
Turn-Off Delay Time 87 139 ns
Fall Time 46 74 ns
Total Gate Charge
Gate to Source Charge 2.2 nC
Gate to Drain “Miller” Charge 3.6 nC

= -10 V, VGS = 0 V,

V

DS

f = 1 MHz

VDD = -10 V, ID = -8 A,
V

= -4.5 V, R

GS

V

= -4.5 V, VDD = -10 V,

GS

I

= -8 A

D

GEN

= 6 Ω

1586 2110 pF

918ns

15 21 nC

mΩ

®

MOSFET

Drain-Source Diode Characteristics

V

= 0 V, IS = - 8 A (Note 2) -0.8 -1.2 V

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mo unted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.

©2012 Fairchild Semiconductor Corporation
FDME910PZT Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 4.1 10 nC

a. 60 °C/W when mounted on
a 1 in2 pad of 2 oz copper.

GS

= 0 V, IS = -1.8 A (Note 2) -0.7 -1.2 V

V

GS

= -8 A, di/dt = 100 A/μs

I

F

2

17 31 ns

is guaranteed by design while R

θJC

b. 175 °C/W when mounted on a
minimum pad of 2 oz copper.

is determined by

θCA

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FDME910PZT P-Channel PowerTrench

0123

0

8

16

24

32

VGS = -2.5 V

VGS = -1.8 V

VGS = -1.5 V

VGS = - 3 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = -4.5 V

-I

D

, DRAIN CURRENT (A)

-V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 8 16 24 32

0

1

2

3

VGS = -1.8 V

VGS = -2.5 V

VGS = -1.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESIST AN CE

-I

D

, DRAIN CURRENT (A)

VGS = -4.5 V

V

GS

= -3 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

ID = -8 A
V

GS

= -4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0

40

80

120

TJ = 125 oC

ID = -8 A

TJ = 25 oC

-V

GS

, GATE TO SOURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0.5 1.0 1.5 2.0

0

8

16

24

32

TJ = 150 oC

V

DS

= -5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

-I

D

, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE V O LTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

-I

S

, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norm a l i z e d O n -Resistan c e

vs Drain Current and Gate Voltage

®

MOSFET

Fi g ure 3 . Nor m aliz e d On R esis t ance

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation
FDME910PZT Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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