Fairchild FDME905PT service manual
FDME905PT
MicroFET 1.6x1.6 Thin
G
D
D
TOP BOTTOM
Pin 1
D
G
D
S
D
D
S
D
D
5
1
6
2
3
4
Bottom Drain Contact
P-Channel PowerTrench® MOSFET
-12 V, -8 A, 22 mΩ
Features
Max r
Max r
Max r
Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
RoHS Compliant
= 22 mΩ at VGS = -4.5 V, ID = -8 A
DS(on)
= 26 mΩ at VGS = -2.5 V, ID = -7.3 A
DS(on)
= 97 mΩ at VGS = -1.8 V, ID = -3.8 A
DS(on)
General Description
This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for its physical size and is well suited to switching
and linear mode applications.
November 2011
FDME905PT P-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
θJA
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C2
Drain to Source Voltage -12 V
Gate to Source Voltage ±8 V
Drain Current -Continuous TA = 25 °C (Note 1a) -8
-Pulsed -30
Power Dissipation TA = 25 °C (Note 1a) 2.1
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case 4.5
Thermal Resistance, Junction to Ambient (Note 1a) 60
Thermal Resistance, Junction to Ambient (Note 1b) 175
E95 FDME905PT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units
= 25 °C unless otherwise noted
A
= 25 °C (Note 1b) 0.7
A
1
A
W
°C/WR
www.fairchildsemi.com
FDME905PT P-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -12 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = -9.6 V, V
Gate to Source Leakage Current VGS = ±8 V, V
I
= -250 μA, referenced to 25 °C -8.7 mV/°C
D
= 0 V -1 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -0.4 -0.7 -1.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
I
= -250 μA, referenced to 25 °C 2.5 mV/°C
D
= -4.5 V, ID = -8 A 18 22
V
GS
V
= -2.5 V, ID = -7.3 A 22 26
GS
= -1.8 V, ID = -3.8 A 28 97
V
GS
= -4.5 V, ID = -8 A, TJ = 125 °C 23 32
V
GS
Forward Transconductance VDS = -5 V, ID = -8 A 38 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 350 525 pF
Reverse Transfer Capacitance 311 465 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Rise Time 816ns
Turn-Off Delay Time 90 144 ns
Fall Time 42 67 ns
Total Gate Charge
Gate to Source Gate Charge 2.4 nC
Gate to Drain “Miller” Charge 3 nC
V
= -6 V, VGS = 0 V,
DS
f = 1 MHz
= -6 V, ID = -8 A,
V
DD
V
= -4.5 V, R
GS
= -6 V, ID = -8 A,
V
DD
V
= -4.5 V
GS
GEN
= 6 Ω
1740 2315 pF
9.5 19 ns
14 20 nC
mΩ
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
is determined with the device moun ted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boa rd of FR-4 mater ial. R
1. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C2
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 4.5 10 nC
V
V
I
F
a. 60 °C/W when mounted on
2
a 1 in
pad of 2 oz copper.
= 0 V, IS = -8 A (Note 2) -0.8 -1.2
GS
= 0 V, IS = -1.8 A (Note 2) -0.7 -1.2
GS
= -8 A, di/dt = 100 A/μs
θJC
2
17 31 ns
is guaranteed by design while R
b. 175 °C/W when mounted on a
minimum pad of 2 oz copper.
V
is determined by
θCA
www.fairchildsemi.com
Loading...