Fairchild FDME820NZT service manual

FDME820NZT

MicroFET 1.6x1.6 Thin

G

D

D

TOP

BOTTOM

Pin 1

D

G

D

S

D

D

S

D

D

N-Channel PowerTrench® MOSFET

20 V, 9 A, 18 mΩ
Features

 Max r
 Max r
 Max r
 Low profile: 0.55 mm maximum in the new package

MicroFET 1.6x1.6 Thin

 Free from halogenated compounds and antimony oxides
 HBM ESD protection level >2.5 kV (Note3)
 RoHS Compliant

= 18 mΩ at VGS = 4.5 V, ID = 9 A

DS(on)

= 24 mΩ at VGS = 2.5 V, ID = 7.5 A

DS(on)

= 32 mΩ at VGS = 1.8 V, ID = 7 A

DS(on)

General Description

This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the r
leadframe.

DS(ON)

Applications

 Li-lon Battery Pack
 Baseband Switch
 Load Switch
 DC-DC Conversion

FDME820NZT N-Channel PowerTrench

April 2012

@ VGS = 1.8 V on special MicroFET

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Thermal Characteristics

R

θJA

R

θJA

Package Marking and Ordering Information

©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C

Device Marking Device Package Reel Size Tape Width Quantity

Drain to Source Voltage 20 V
Gate to Source Voltage ±12 V
Drain Current -Continuous TA = 25 °C (Note 1a) 9

-Pulsed 40
Power Dissipation for Single Operation TA = 25 °C (Note 1a) 2.1
Power Dissipation for Single Operation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Ambient (Note 1a) 70
Thermal Resistance, Junction to Ambient (Note 1b) 190

8T FDME820NZT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units

= 25 °C unless otherwise noted

A

= 25 °C (Note 1b) 0.7

A

1

A

W

°C/W

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Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 20 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 16 V, V
Gate to Source Leakage Current VGS = ±12 V, V

I

= 250 μA, referenced to 25 °C 20 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±10 μA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 0.5 0.8 1.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -3 mV/°C

D

V

= 4.5 V, ID = 9 A 14 18

GS

= 2.5 V, ID = 7.5 A 17 24

V

GS

= 1.8 V, ID = 7 A 26 32

V

GS

= 4.5 V, ID = 9 A ,

V

GS

T

= 125 °C

J

19 24

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 203 pF
Reverse Transfer Capacitance 190 pF

= 10 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 1.0 Ω

865 pF

FDME820NZT N-Channel PowerTrench

mΩ

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 5ns
Turn-Off Delay Time 19 ns
Fall Time 5ns
Total Gate Charge VDD = 4.2 V, ID = 3 A, V
Total Gate Charge VDD = 4.2 V, ID = 3 A, V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge 3.2 nC

= 10 V, ID = 4 A

V

DD

V

= 4.5 V, R

GS

= 10 V, ID = 9 A

V

DD

GEN

Drain-Source Diode Characteristics

V

= 0 V, IS = 1.6 A (Note 2) 0.7 1.2 V

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. bo ard of FR-4 mate rial. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 4 nC

a. 70 °C/W when mounted on
a 1 in2 pad of 2 oz copper.

GS

= 0 V, IS = 9 A (Note 2) 0.8 1.2 V

V

GS

F = 9 A, di/dt = 100 A/us

I

= 2 Ω

G

9ns

= 4.3 V 8.0 nC

GS

= 4.5 V 8.5 nC

GS

1.4 nC

18 ns

is guaranteed by design while R

DF

DS

θJC

b. 190 °C/W when mounted on a
minimum pad of 2 oz copper.

SS

SF

θCA

is determined by

SS

SF

DS

G

DF

2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.

©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C

2

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FDME820NZT N-Channel PowerTrench

0 0.5 1.0 1.5 2.0 2.5

0

10

20

30

40

VGS = 1.5 V

VGS = 2.5 V

VGS = 1.8 V

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

VGS = 4.5 V
VGS = 3 V

VGS = 2 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0 10203040

0

1

2

3

4

5

V

GS

= 2 V

VGS = 1.5 V

VGS = 2.5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 3 V

V

GS

= 1.8 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 9 A
V

GS

= 4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

0.91.82.73.64.5

0

20

40

60

80

TJ = 125 oC

ID = 9 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTA G E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

10

20

30

40

TJ = 150 oC

V

DS

= 5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

1000

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Nor mal ized O n-R esi sta nce

vs Drain Current and Gate Voltage

®

MOSFET

Fi gure 3. N or malized On Re sistanc e

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Ga te to

Source Voltage

Figure 6.

Source to D rain Diode

Forward Voltage vs Source Current

3

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