Fairchild FDME510PZT service manual

FDME510PZT

MicroFET 1.6x1.6 Thin

G

D

D

TOP

BOTTOM

Pin 1

D

G

D

S

D

D

S

D

D

P-Channel PowerTrench® MOSFET

-20 V, -6 A, 37 mΩ

Features

 Max r
 Max r
 Max r
 Max r
 Low profile: 0.55 mm maximum in the new package

MicroFET 1.6x1.6 Thin

 Free from halogenated compounds and antimony oxides
 HBM ESD protection level > 2400V (Note3)
 RoHS Compliant

= 37 mΩ at VGS = -4.5 V, ID = -5 A

DS(on)

= 50 mΩ at VGS = -2.5 V, ID = -4 A

DS(on)

= 65 mΩ at VGS = -1.8 V, ID = -3 A

DS(on)

= 100 mΩ at VGS = -1.5 V, ID = -2 A

DS(on)

General Description

This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.

The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for its physical size and is well suited to switching
and linear mode applications.

FDME510PZT P-Channel PowerTrench

November 2011

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Thermal Characteristics

R

θJA

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2011 Fairchild Semiconductor Corporation
FDME510PZT Rev.C1

Drain to Source Voltage -20 V
Gate to Source Voltage ±8 V
Drain Current -Continuous TA = 25 °C (Note 1a) -6

-Pulsed -15
Power Dissipation for Single Operation TA = 25 °C (Note 1a) 2.1
Power Dissipation for Single Operation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Ambient (Note 1a) 60
Thermal Resistance, Junction to Ambient (Note 1b) 175

7T FDME510PZT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units

= 25 °C unless otherwise noted

A

1

= 25 °C (Note 1b) 0.7

A

A

W

°C/W

www.fairchildsemi.com

FDME510PZT P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -20 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = -16 V, V
Gate to Source Leakage Current VGS = ±8 V, V

I

= -250 μA, referenced to 25 °C -13 mV/°C

D

= 0 V -1 μA

GS

= 0 V ±10 μA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -0.4 -0.5 -1.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

I

= -250 μA, referenced to 25 °C 3 mV/°C

D

V

= -4.5 V, ID = -5 A 31 37

GS

= -2.5 V, ID = -4 A 38 50

V

GS

= -1.8 V, ID = -3 A 48 65

V

GS

= -1.5 V, ID = -2 A 57 100

V

GS

= -4.5 V, ID = -5 A ,

V

GS

T

= 125 °C

J

40 60

Forward Transconductance VDS = -5 V, ID = -5 A 21 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 155 210 pF
Reverse Transfer Capacitance 140 210 pF

= -10 V, VGS = 0 V,

V

DS

f = 1 MHz

1120 1490 pF

mΩ

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Rise Time 10 16 ns
Turn-Off Delay Time 93 149 ns
Fall Time 54 86 ns
Total Gate Charge
Gate to Source Gate Charge 1.6 nC
Gate to Drain “Miller” Charge 4 nC

VDD = -10 V, ID = -5 A
V

= -4.5 V, R

GS

= -10 V, ID = -5 A

V

DD

V

= -4.5 V

GS

GEN

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. bo ard of FR-4 mate rial. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 16 29 nC

a. 60 °C/W when mounted on

2

pad of 2 oz copper.

a 1 in

= 0 V, IS = -1.6 A (Note 2) -0.6 -1.2 V

GS

= -5 A, di/dt = 100 A/μs

I

F

= 6 Ω

6.5 13 ns

16 22 nC

38 61 ns

is guaranteed by design while R

θJC

b. 175 °C/W when mounted on a
minimum pad of 2 oz copper.

is determined by

θCA

2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.

©2011 Fairchild Semiconductor Corporation
FDME510PZT Rev.C1

2

www.fairchildsemi.com

FDME510PZT P-Channel PowerTrench

0 0 .5 1.0 1.5

0

5

10

15

VGS = -3 V

VGS = -2.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = - 1.8 V

VGS = -1.5 V

VGS = -4.5 V

-I

D

, DRAIN CURRENT (A)

-V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 5 10 15

0

1

2

3

VGS = -1.8 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-I

D

, DRAIN CURRENT (A)

V

GS

= -4.5 V

VGS = -2.5 V

VGS = -1.5 V

V

GS

= -3 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = -5 A
V

GS

= -4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0

50

100

150

200

ID = -5 A

TJ = 25 oC

TJ = 125 oC

-V

GS

, GATE TO SOURCE VOL TA G E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0.5 1.0 1.5 2.0

0

5

10

15

V

DS

= -5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

-I

D

, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE VOLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.1

1

10

20

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

-I

S

, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

®

MOSFET

Fi g ure 3 . Norm a lize d On Re s ista n ce

vs Junction Temperature

©2011 Fairchild Semiconductor Corporation
FDME510PZT Rev.C1

Figure 5. Transfer Characteristics

Figure 4.

On-Resista nce vs Gate to

Source Voltage

Figure 6.

Source to Dr ai n Diode

Forward Voltage vs Source Current

3

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