Fairchild FDME1034CZT service manual

FDME1034CZT

G2

S1

G1

D2

S2

D1

MicroFET 1.6x1.6 Thin

D1

D2

TOP

BOTTOM

Pin 1

Complementary PowerTrench® MOSFET

N-channel: 20 V, 3.8 A, 66 mΩ P-channel: -20 V, -2.6 A, 142 mΩ

FDME1034CZT Complementary PowerTrench

July 2010

Features

Q1: N-Channel

 Max r
 Max r
 Max r
 Max r

Q2: P-Channel

 Max r
 Max r
 Max r
 Max r

 Low profile: 0.55 mm maximum in the new package

MicroFET 1.6x1.6 Thin

 Free from halogenated compounds and antimony

oxides

 HBM ESD protection level > 1600 V (Note 3)
 RoHS Compliant

= 66 mΩ at VGS = 4.5 V, ID = 3.4 A

DS(on)

= 86 mΩ at VGS = 2.5 V, ID = 2.9 A

DS(on)

= 113 mΩ at VGS = 1.8 V, ID = 2.5 A

DS(on)

= 160 mΩ at VGS = 1.5 V, ID = 2.1 A

DS(on)

= 142 mΩ at VGS = -4.5 V, ID = -2.3 A

DS(on)

= 213 mΩ at VGS = -2.5 V, ID = -1.8 A

DS(on)

= 331 mΩ at VGS = -1.8 V, ID = -1.5 A

DS(on)

= 530 mΩ at VGS = -1.5 V, ID = -1.2 A

DS(on)

General Description

This device is designed specifically as a single package solution
for a DC/DC ‘Switching’ MOSFET in cellular handset and other
ultra-portable applications. It features an independent
N-Channel & P-Channel MOSFET with low on-state resistance
for minimum conduction losses. The gate charge of each
MOSFET is also minimized to allow high frequency switching
directly from the controlling device.

The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.

Applications

 DC-DC Conversion
 Level Shifted Load Switch

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Thermal Characteristics

R

θJA

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDME1034CZT Rev.C1

Drain to Source Voltage 20 -20 V
Gate to Source Voltage ±8 ±8 V
Drain Current -Continuous TA = 25 °C (Note 1a) 3.8 -2.6

-Pulsed 6 -6
Power Dissipation for Single Operation TA = 25 °C (Note 1a) 1.4
Power Dissipation for Single Operation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90
Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195

5T FDME1034CZT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units

= 25 °C unless otherwise noted

A

= 25 °C (Note 1b) 0.6

A

A

W

°C/W

FDME1034CZT Complementary PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

= 250 μA, VGS = 0 V

Drain to Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current

D

I

= -250 μA, VGS = 0 V

D

ID = 250 μA, referenced to 25 °C
I

= -250 μA, referenced to 25 °CQ1Q2

D

V

= 16 V, V

DS

V

= -16 V, V

DS

Gate to Source Leakage Current VGS = ±8 V, V

= 0 V

GS

= 0 V

GS

= 0 V All ±10 μA

DS

Q1
Q220-20

Q1
Q2

V

16

-12

mV/°C

1

-1

I

On Characteristics

V

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage
Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance

= VDS, ID = 250 μA

GS

V

= VDS, ID = -250 μA

GS

I

= 250 μA, referenced to 25 °C

D

V

= 4.5 V, ID = 3.4 A

GS

= 2.5 V, ID = 2.9 A 68 86

V

GS

= 1.8 V, ID = 2.5 A 85 113

V

GS

= 1.5 V, ID = 2.1 A 106 160

V

GS

= 4.5 V, ID = 3.4 A,

V

GS

T

=125°C

J

V

= -4.5 V, ID = -2.3 A

GS

= -2.5 V, ID = -1.8 A 120 213

V

GS

= -1.8 V, ID = -1.5 A 150 331

V

GS

= -1.5 V, ID = -1.2 A 190 530

V

GS

= -4.5 V, ID = -2.3 A ,

V

GS

T

= 125 °C

J

V

= 4.5 V, ID =3.4 A

DS

V

= -4.5 V, ID = -2.3 A

DS

Q1Q20.4

-0.4

Q1
Q2

Q1

Q2

Q1
Q2

0.7

-0.6

-3
2

1.0

-1.0

55 66

76 112
95 142

128 190

9
7

mV/°C

μA

V

mΩ

S

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

g

gs

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

Q1
V

= 10 V, VGS = 0 V, f = 1 MHz

DS

Q2
V

= -10 V, VGS = 0 V, f = 1 MHz

DS

Q1
Q2

Q1
Q2

Q1
Q2

225
305

40
55

25
50

300
405

55
75

40
75

pF

pF

pF

Q1
V

= 10 V, ID = 1 A,

DD

V

= 4.5 V, R

GS

Q2
V

= -10 V, ID = -1 A,

DD

V

= -4.5 V, R

GS

Q1

= 10 V, ID = 3.4 A,

V

DD

V

= 4.5 V

GS

Q2
V

= -10 V, ID = -2.3 A,

DD

V

= -4.5 V

GS

GEN

GEN

= 6 Ω

= 6 Ω

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

Q1
Q2

4.5

4.7

2.0

4.8
15

33

1.7
16

3

5.5

0.4

0.6

0.6

1.4

10
10

10
10

27
53

10
29

4.2

7.7

ns

nCQ

©2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FDME1034CZT Rev.C1

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device moun ted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boa rd of FR-4 mate rial. R

θJA

the user's board design.

Source to Drain Diode Forward
Voltage

Reverse Recovery Time

Reverse Recovery Time

V

= 0 V, IS = 0.9 A (Note 2)

GS

V

= 0 V, IS = -0.9 A (Note 2)Q1Q2

GS

Q1
I

= 3.4 A, di/dt = 100 A/μS

F

Q2
I

= -2.3 A, di/dt = 100 A/μs

F

0.7

-0.8

Q1
Q2

Q1
Q2

is guaranteed by design while R

θJC

8.5
16

1.4

4.4

1.2

-1.2
17

29
10

10

is determined by

θCA

FDME1034CZT Complementary PowerTrench

V

ns

nC

a. 90 °C/W when mounted on
a 1 in2 pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.

b. 195 °C/W when mounted on a
minimum pad of 2 oz copper.

®

MOSFET

©2010 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com
FDME1034CZT Rev.C1

FDME1034CZT Complementary PowerTrench

0.0 0.5 1.0 1.5

0

2

4

6

VGS = 1.8 V

VGS = 3 V

VGS = 4.5 V

VGS = 1.5 V

VGS = 2.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0246

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 2.5 V

VGS = 3 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 1.8 V

VGS = 1.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 3.4 A
V

GS

= 4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0

50

100

150

200

250

300

TJ = 125 oC

ID = 3.4 A

TJ = 25 oC

V

GS

, GATE TO SO U RCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0.0 0.5 1.0 1.5 2.0

0

2

4

6

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics (Q1 N-Channel) T

Figure 1.

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

Norm a l i z e d O n -Resistan c e

vs Drain Current and Gate Voltage

®

MOSFET

Fi g ure 3 . Nor m aliz e d On R esis t ance

vs Junction Temperature

©2010 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com
FDME1034CZT Rev.C1

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current