Fairchild FDME1024NZT service manual

FDME1024NZT

G2

S1

G1

D2

S2

D1

MicroFET 1.6x1.6 Thin

D1

D2

BOTTOM

Pin 1

TOP

Dual N-Channel PowerTrench® MOSFET

20 V, 3.8 A, 66 mΩ

Features

 Max r
 Max r
 Max r
 Max r

 Low profile: 0.55 mm maximum in the new package

MicroFET 1.6x1.6 Thin

 Free from halogenated compounds and antimony oxides
 HBM ESD protection level > 1600 V (Note 3)
 RoHS Compliant

= 66 mΩ at VGS = 4.5 V, ID = 3.4 A

DS(on)

= 86 mΩ at VGS = 2.5 V, ID = 2.9 A

DS(on)

= 113 mΩ at VGS = 1.8 V, ID = 2.5 A

DS(on)

= 160 mΩ at VGS = 1.5 V, ID = 2.1 A

DS(on)

General Description

This device is designed specifically as a single package solution
for dual switching requirement in cellular handset and other
ultra-portable applications. It features two independent
N-Channel MOSFETs with low on-state resistance for minimum
conduction losses.

The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.

Applications

 Baseband Switch
 Load Switch

FDME1024NZT Dual N-Channel PowerTrench

July 2010

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Thermal Characteristics

R

θJA

R

θJA

Package Marking and Ordering Information

©2010 Fairchild Semiconductor Corporation
FDME1024NZT Rev.C1

Device Marking Device Package Reel Size Tape Width Quantity

Drain to Source Voltage 20 V
Gate to Source Voltage ±8 V
Drain Current -Continuous TA = 25 °C (Note 1a) 3.8

-Pulsed 6
Power Dissipation for Single Operation TA = 25 °C (Note 1a) 1.4
Power Dissipation for Single Operation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90
Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195

4T FDME1024NZT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units

= 25 °C unless otherwise noted

A

= 25 °C (Note 1b) 0.6

A

1

A

W

°C/W

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FDME1024NZT Dual N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

ΔV

GS(th)

ΔT

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 20 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 16 V, V
Gate to Source Leakage Current VGS = ±8 V, V

= 250 μA, referenced to 25 °C 16 mV/°C

I

D

= 0 V 1 μA

GS

= 0 V ±10 μA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 0.4 0.7 1.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 4.5 V, ID = 3.4 A 9 S

I

= 250 μA, referenced to 25 °C -3 mV/°C

D

V

= 4.5 V, ID = 3.4 A 55 66

GS

= 2.5 V, ID = 2.9 A 68 86

V

GS

= 1.8 V, ID = 2.5 A 85 113

V

GS

= 1.5 V, ID = 2.1 A 106 160

V

GS

= 4.5 V, ID = 3.4 A, TJ = 125 °C 76 112

V

GS

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 40 55 pF
Reverse Transfer Capacitance 25 40 pF

= 10 V, VGS = 0 V,

V

DS

f = 1 MHz

225 300 pF

mΩ

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Rise Time 2 10 ns
Turn-Off Delay Time 15 27 ns

= 10 V, ID = 1 A,

V

DD

V

= 4.5 V, R

GS

GEN

Fall Time 1.7 10 ns
Total Gate Charge
Gate to Source Gate Charge 0.4 nC
Gate to Drain “Miller” Charge 0.6 nC

= 10 V, ID = 3.4 A,

V

DD

V

= 4.5 V

GS

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 1.4 10 nC

a. 90 °C/W when mounted on

2

a 1 in

pad of 2 oz copper.

= 0 V, IS = 0.9 A (Note 2) 0.7 1.2 V

GS

= 3.4 A, di/dt = 100 A/μs

I

F

= 6 Ω

4.5 10 ns

3 4.2 nC

8.5 17 ns

is guaranteed by design while R

θJC

b. 195 °C/W when mounted on a
minimum pad of 2 oz copper.

is determined by

θCA

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.

FDME1024NZT Rev.C1

2

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FDME1024NZT Dual N-Channel PowerTrench

0.0 0.5 1.0 1.5

0

2

4

6

VGS = 1.8 V

VGS = 3 V

VGS = 4.5 V

VGS = 1.5 V

VGS = 2.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0246

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 2.5 V

VGS = 3 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 1.8 V

VGS = 1.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 3.4 A
V

GS

= 4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0

50

100

150

200

250

300

TJ = 125 oC

ID = 3.4 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOL TA G E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0.0 0.5 1.0 1.5 2.0

0

2

4

6

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Nor m a l i z e d On-Res i s t a n c e

vs Drain Current and Gate Voltage

®

MOSFET

Fi g u re 3. N o rmali z e d On- R e sist a n ce

vs Junction Temperature

FDME1024NZT Rev.C1

Figure 5. Transfer Characteristics

Figure 4.

On- Resistance vs Gat e to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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