Fairchild FDME1023PZT service manual

FDME1023PZT

MicroFET 1.6x1.6 Thin

TOP

BOTTOM

Pin 1

Dual P-Channel PowerTrench® MOSFET

-20 V, -2.6 A, 142 mΩ

Features

 Max r  Max r  Max r  Max r  Low profile: 0.55 mm maximum in the new package

MicroFET 1.6x1.6 Thin

 Free from halogenated compounds and antimony oxides  HBM ESD protection level > 1600 V (Note 3)  RoHS Compliant

= 142 mΩ at VGS = -4.5 V, ID = -2.3 A

DS(on)

= 213 mΩ at VGS = -2.5 V, ID = -1.8 A

DS(on)

= 331 mΩ at VGS = -1.8 V, ID = -1.5 A

DS(on)

= 530 mΩ at VGS = -1.5 V, ID = -1.2 A

DS(on)

General Description

This device is designed specifically as a single package solution for the battery charges switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.

The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

Applications

 Load Switch  Battery Charging  Battery Disconnect Switch

FDME1023PZT Dual P-Channel PowerTrench

July 2010

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Thermal Characteristics

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

Drain to Source Voltage -20 V Gate to Source Voltage ±8 V Drain Current -Continuous TA = 25 °C (Note 1a) -2.6

-Pulsed -6 Power Dissipation for Single Operation TA = 25 °C (Note 1a) 1.4 Power Dissipation for Single Operation T Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90 Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195

2T FDME1023PZT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units

= 25 °C unless otherwise noted

= 25 °C (Note 1b) 0.6

°C/W

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Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -20 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = -16 V, V Gate to Source Leakage Current VGS = ±8 V, V

= -250 μA, referenced to 25 °C -12 mV/°C

= 0 V -1 μA

= 0 V ±10 μA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -0.4 -0.6 -1.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

= -250 μA, referenced to 25 °C 2 mV/°C

= -4.5 V, ID = -2.3 A 95 142

= -2.5 V, ID = -1.8 A 120 213

= -1.8 V, ID = -1.5 A 150 331

= -1.5 V, ID = -1.2 A 190 530

= -4.5 V, ID = -2.3 A,

= 125 °C

128 190

Forward Transconductance VDS = -4.5 V, ID = -2.3 A 7 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 55 75 pF Reverse Transfer Capacitance 50 75 pF

= -10 V, VGS = 0 V,

f = 1 MHz

305 405 pF

FDME1023PZT Dual P-Channel PowerTrench

mΩ

MOSFET

Switching Characteristics

d(on)

d(off)

Q Q Q

g gs gd

Turn-On Delay Time Rise Time 4.8 10 ns Turn-Off Delay Time 33 53 ns Fall Time 16 29 ns Total Gate Charge Gate to Source Gate Charge 0.6 nC Gate to Drain “Miller” Charge 1.4 nC

VDD = -10 V, ID = -1 A, V

= -4.5 V, R

= -10 V, ID = -2.3 A,

= -4.5 V

GEN

Drain-Source Diode Characteristics

NOTES:

1. R

is determined with the device moun ted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boa rd of FR-4 materi al. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge 4.4 10 nC

a. 90 °C/W when mounted on a 1 in2 pad of 2 oz copper.

= 0 V, IS = -0.9 A (Note 2) -0.8 -1.2 V

= -2.3 A, di/dt = 100 A/μs

= 6 Ω

4.7 10 ns

5.5 7.7 nC

16 29 ns

is guaranteed by design while R

θJC

b. 195 °C/W when mounted on a minimum pad of 2 oz copper.

is determined by

θCA

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.

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FDME1023PZT Dual P-Channel PowerTrench

00.51.01.52.0

VGS = -3 V

VGS = -2.5 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = - 1.8 V

VGS = -1.5 V

VGS = -4.5 V

-I

, DRAIN CURRENT (A)

-V

, DRAIN TO SOURCE VOLTAGE (V)

0246

VGS = -1.8 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-I

, DRAIN CURRENT (A)

= -4.5 V

VGS = -2.5 V

VGS = -1.5 V

= -3 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = -2.3 A V

= -4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTION TEMPERATURE (

1.01.52.02.53.03.54.04.5

100

200

300

400

500

ID = -2.3 A

TJ = 25 oC

TJ = 125 oC

-V

, GATE TO SOURCE VOLTA GE (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

0.0 0.5 1.0 1.5 2.0

= -5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

-I

, DRAIN CURRENT (A)

-VGS, GATE TO SOURC E V O LTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

-I

, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

MOSFET

Fi g ure 3 . Norm a lize d On Re s ista n ce

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resista nce vs Gate to

Source Voltage

Figure 6.

Source to Dr ai n Diode

Forward Voltage vs Source Current

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