Fairchild FDMC8884 service manual

FDMC8884

Bottom

D

D

D

D

S

S

S

G

Top

Pin 1

MLP 3.3x3.3

G

S

S

S

D
D

D

D

5
6

7

8

3

2

1

4

N-Channel Power Trench® MOSFET

30 V, 15 A, 19 mΩ

Features

 Max r
 Max r
 High performance technology for extremely low r
 Termination is Lead-free and RoHS Compliant

= 19 mΩ at VGS = 10 V, ID = 9.0 A

DS(on)

= 30 mΩ at VGS = 4.5 V, ID = 7.2 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power
been especially tailored to minimize the on-state resistance.
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.

Application

 High side in DC - DC Buck Converters
 Notebook battery power management
 Load switch in Notebook

FDMC8884 N-Channel Power Trench

April 2012

Trench® process that has

This

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8884 FDMC8884 MLP 3.3x3.3 13 ’’ 12 mm 3000 units

©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3

Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 15

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 40
Single Pulse Avalanche Energy (Note 3) 24 mJ
Power Dissipation TC = 25 °C 18
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 6.6
Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

A

= 25 °C 24

C

= 25 °C (Note 1a) 9.0

A

= 25 °C (Note 1a) 2.3

A

1

A

W

°C/W

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Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 22 mV/°C

I

D

V

= 24 V, V

DS

= 0 V 1

GS

= 125 °C 250

T

J

= 0 V ±100 nA

DS

FDMC8884 N-Channel Power Trench

μA

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.4 1.9 2.5 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 5 V, ID = 9.0 A 24 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 110 150 pF
Reverse Transfer Capacitance 76 115 pF
Gate Resistance 1.4 2.1 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 2 10 ns
Turn-Off Delay Time 15 27 ns
Fall Time 2 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 1.8 nC
Gate to Drain “Miller” Charge 2.2 nC

I

= 250 μA, referenced to 25 °C -6 mV/°C

D

V

= 10 V, ID = 9.0 A 16 19

GS

= 4.5 V, ID = 7.2 A 22 30

GS

= 10 V, ID = 9.0 A, TJ = 125 °C 22 30

V

GS

= 15 V, VGS = 0 V,

V

DS

513 685 pF

f = 1 MHz

6 12 ns

= 15 V, ID = 9.0 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

10 14 nC

= 0 V to 4.5 V 5.0 7.0 nC

GS

V

DD

I

= 9.0 A

D

= 15 V

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

= 0 V, IS = 9.0 A (Note 2) 0.86 1.2

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1. 5 in . bo ard of FR -4 ma teri al. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. EAS of 24 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 4 A .

©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 3 10 nC

a. 53 °C/W when mounted on

2

pad of 2 oz copper

a 1 in

SS

SF

DS

DF

G

GS

= 0 V, IS = 1.6 A (Note 2) 0.76 1.2

V

GS

IF = 9.0 A, di/dt = 100 A/μs

SS

SF

DF

DS

G

2

13 18 ns

is guaranteed by design while R

θJC

b.125 °C/W when mounted on
a minimum pad of 2 oz copper

V

is determined by

θCA

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FDMC8884 N-Channel Power Trench

0123

0

10

20

30

40

VGS = 6 V

VGS = 3.5 V

VGS = 4.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 4 V

VGS = 3 V

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 10203040

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V

GS

= 6 V

VGS = 3.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4 V

VGS = 4.5 V

VGS = 3 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 9.0 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

10

20

30

40

50

60

70

80

TJ = 125 oC

ID = 9.0 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTAGE ( V )

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

12345

0

10

20

30

40

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.00.20.40.60.81.01.21.4

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Nor ma liz ed O n- Res istan ce

vs Drain Current and Gate Voltage

®

MOSFET

Figur e 3 . Norm al ized O n- Resis ta nce

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3

Figure 5. Transfer Characteristics

Figure 4.

On-Resistan ce vs Gate to

Source Voltage

Figure 6.

Source to Dra in Diode

Forward Voltage vs Source Current

3

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