Fairchild FDMC8882 service manual

FDMC8882

N-Channel Power Trench®MOSFET

30 V, 16 A, 14.3 m:

Features

 Max r

 High performance technology for extremely low r

 Termination is Lead-free and RoHS Compliant

= 14.3 m: at VGS = 10 V, ID = 10.5 A

DS(on)

= 22.5 m: at VGS = 4.5 V, ID = 8.3 A

DS(on)

September 2010



General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Application

 High side in DC - DC Buck Converters

 Notebook battery power management

 Load switch in Notebook

®

process that has

FDMC8882 N-Channel Power Trench

®

MOSFET

Top

Pin 1

S

Bottom

G

S

D

5

D

6

D

7

8

D

MLP 3.3x3.3

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25 °C 16

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 40

Power Dissipation TC = 25 °C 18

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 34

C

= 25 °C (Note 1a) 10.5

A

= 25 °C (Note 1a) 2.3

A

Thermal Characteristics

G

4

S

3

S

2

S

1

A

W

R

TJC

R

TJA

Thermal Resistance, Junction to Case 6.6

Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8882 FDMC8882 MLP 3.3x3.3 13 ’’ 12 mm 3000 units

°C/W

1

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FDMC8882 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV 

'T

I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 30 V

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

= 250 PA, referenced to 25 °

I

D

V

= 24 V, VGS= 0 V 1

DS

T

C 25 mV/°C

= 125 °C 250

J

Gate to Source Leakage Current VGS = ±20 V, VDS= 0 V ±100 nA

On Characteristics

V

GS(th)

'V 'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 1.2 1.9 2.5 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

Forward T

ransconductance V

I

= 250 PA, referenced to 25 °C -5 mV/°C

D

V

= 10 V, ID = 10.5 A 12.4 14.3

GS

= 4.5 V, ID = 8.3 A 16.0 22.5

V

GS

= 10 V, ID = 10.5 A

V

GS

T

= 125 °C

J

= 5 V

DD

= 10.5 A 3

, I

D

17.4

3S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Cap

acitance 140 185 pF

Reverse Transfer Capacitance 90 135 pF

= 15 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance

710 945 pF

1.0

PA

m:

:

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 310ns

Turn-Off Delay Time 17 30 ns

V

= 15 V, ID = 10.5 A,

DD

= 10 V, R

V

GS

GEN

Fall Time 210ns

Total Gate Charge VGS = 0 V to 10 V

Total Gate Charge V

= 0 V to 4.5 V 7 10 nC

GS

Total Gate Charge 2.3 nC

Gate to Drain “Miller” Charge 2.8 nC

Drain-Source Diode Characteristics

V

= 0 V, IS= 10.5 A (Note 2) 0.88 1.2

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 4.4 10 nC

a. 53 °C/W when mounted on

2

a 1 in

pad of 2 oz cop per

GS

= 0 V, IS= 1.9 A (Note 2) 0.76 1.2

V

GS

= 10.5 A, di/dt = 100 A/Ps

I

F

= 6 :

V

DD

= 10.5 A

I

D

= 15 V

is guaranteed by design while R

TJC

b.125 °C/W when mounted on a minimum pad of 2 oz copper

714ns

14 20 nC

V

16 28 ns

is determined by

TCA

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.

2

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FDMC8882 N-Channel Power Trench

Typical Characteristics T

40

VGS = 10 V VGS = 6 V

30

VGS = 4.5 V

VGS = 4 V

20

DRAIN CURRENT (A)

10

,

D

I

0

01234

,

V

DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 1.

1.6

1.4

On-Region Characteristics Figure 2.

ID = 10.5 A

= 10 V

V

GS

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

,

JUNCTION TEMPERATURE

J

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

= 25 °C unless otherwise noted

J

VGS = 3.5 V

VGS = 3 V

o

C

(

)

4.0

VGS = 3 V

3.5

3.0

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

VGS = 3.5 V

2.5

2.0

NORMALIZED

1.5

VGS = 4 V

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 0 10203040

VGS = 6 V

DRAIN CURRENT (A)

,

I

D

VGS = 4.5 V

VGS = 10 V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

50

)

:

m

40

(

ID= 10.5 A

30

DRAIN TO

,

20

DS(on)

r

10

SOURCE ON-RESISTANCE

0

246810

V

,

GATE TO SOURCE VOLTAGE (V)

GS

Figure 4.

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

TJ= 125 oC

TJ= 25 oC

Source Voltage

®

MOSFET

40

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

30

V

= 5 V

DS

20

TJ = 150 oC

10

, DRAIN CURRENT (A)

D

I

0

12345

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

TJ = 25 oC

TJ = -55 oC

60

V

= 0 V

GS

10

1

TJ= 150 oC

TJ = 25 oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55 oC

Forward Voltage vs Source Current

3

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