Fairchild FDMC8878 service manual

FDMC8878 N-Channel Power Trench

30V, 16.5A, 14m: Features

 Max r

 Low Pr

 RoHS Compliant

on)

DS(

on)

ofile - 0.8

= 14m:

= 17

at V

GS

m: at V

GS

mm max in

, I

= 10V

D

, I

= 4.5V

D

MLP 3.3X3.3

= 9.6A

= 8.7A

®

MOSFET

General Description

This Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications.

N-Channel MOSFET is a rugged gate version of

FDMC8878 N-Channel Power Trench

December 2010

Top

Pin 1

S

MLP 3.3x3

MOSFET Maximum Ratings T

Symbol Parame

Dr

V

DS

V

GS

I

D

P

D

, T

T

G

J

ST

ain to Source Voltage 30 V

Gate to Source

ain Current -Continuous (Package limited) T

Dr

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 60

Power Dissip

Power Dissipation T

Opera

ting and Storage Junction Temperature Range -55 to +150 °C

Voltage ±20 V

ation T

.3

= 25°C unless otherwise noted

A

Thermal Characteristics

Application

®

 DC -

DC Conversion

ttom

Bo

D

G

S

D

ter Ratings Units

C 16.5

= 25°

C

= 25°C 38

C

=

25°C (Note 1a) 9.6

A

= 25°C 3

C

= 25°C (Note 1a) 2.1

A

5

D

6

D

7

D

8

1

G

4

S

3

2

S

1

A

W

MOSFET

R

TJC

R

TJA

kage Marking and Ordering Information

Pac

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8878 FDMC8878

©2

010 Fairchild Semiconductor Corporation

FDMC8878 Rev.D3

Thermal Resistance, Junction to Case 4

T

hermal Resistance, Junction to Ambient (Note 1a) 60

MLP 3.3X3.3

1

13 ”

°C/W

12 mm 3000 unit

www.fairchildsemi.com

s

unless otherwise noted

Electrical Characteristics T

Symbol Parameter Test Conditions Min Typ Max Units

Of

f Characteristics

BV

'BV

'T



I

DSS

I

GSS

DSS

J

Dr

ain to Source Breakdown Voltage I

Breakdown

Voltage Temperature

Coefficient

Zer

o Gate Voltage Drain Current

Gate to Sour

ce Leakage Current V

= 25°C

J

= 250PA,

D

= 250PA

I

D

=

V

24V, 1

DS

= 0V TJ =

V

GS

±20V, V

=

GS

=

V

0V 30 V

GS

, referenced to 25°C 20 mV/°C

125°C 100

= 0V ±100 nA

DS

FDMC8878 N-Channel Power Trench

PA

On Cha

V

'V 

r

DS(on)

g

Dyn

C

R

Swit

t

d(on)

t

r

t

d(o

t

f

Q

racteristics

GS(

'T

FS

th)

GS(

J

Gate to Sour

th)

Temperature Coefficient

Drain to Source On Resistance

Forwar

amic Characteristics

iss

s

os

s

rs

g

Input C

Output Cap

Reverse T

Gate Resistance f = 1MHz 1.1 :

ching Characteristics

urn-On Delay Time

T

Rise T

T

urn-Off Delay Time 20 36 ns

all Time 310ns

F

otal Gate Charge

T

Gate to Source Gate C

Gate to Dr

g(

gs

gd

ff)

TOT)

ce Threshold Voltage V

ce Threshold Voltage

d Transconductance V

apacitance

acitance 183 255 pF

ransfer Capacitance 118 180 pF

ime 410ns

harge 2.8 nC

ain “Miller” Charge 3.9 nC

= VDS, ID = 250PA 1 1.7 3 V

GS

0PA, referenced to 25°C -5.7 mV/°C

= 25

I

D

V

GS

V

GS

DS

V

DS

f = 1MHz

V

DD

V

GS

V

GS

I

D

, I

= 10V

= 9.6A 9.6 14.0

D

= 4.5V, ID = 8.7A 12.1 17.0

= 10V

= 5V

=

, I

9.6A , T

D

= 9.6A 35 S

, I

D

= 15V, VGS = 0V,

15V, I

= = 10V, R

D

= 9.

GEN

= 10V , VDD = 15V ,

= 9.6A

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

the user's board design.

Source to D

Rever

Reverse Recovery Char

rain Diode Forward Voltage V

se Recovery Time

ge 14 21 nC

a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper

= 0V, IS =

GS

= 9.6A, di/dt = 100A/Ps

I

F

9.6A (Note 2) 0.8 1.2 V

= 125°C 13.5 20.0

J

1000 1

6A

816ns

= 6:

18 26 nC

23 35 ns

is guaranteed by design while R

TJC

b. 135°C/W when mounted on a minimum pad of 2 oz copper

m:V

230 pF

is determined by

TCA

®

MOSFET

2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

Fairchild Semiconductor Corporation

FDMC8878 Rev.

D3

2

www.fairchildsemi.com

P

:

P

FDMC8878 N-Channel Power Trench

Typical Characteristics T

60

VGS = 10

50

40

30

20

DRAIN CURRENT (A) ,

D

I

10

0

Fi

gure 1.

1234

VDS,

DRAIN TO SOURCE VOLTAGE (V)

On-Reg

1.6

ID =

9.6A

V

10V

=

GS

1.4

1.2

1.0

NORMALIZED

0.8

0.6 5 -50 -25 0 25 50 75 100 125 150

-7

DRAIN TO SOURCE ON-RESISTANCE

TJ,

JUNCTION TEMPERATURE

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

Junction Temperature

vs

V

5V

VGS = 4.

V

VGS = 4

PU DU

ion Characteristics Figure 2.

= 25°C u

J

LSE DURATION = 80 TY CYCLE = 0.5%MAX

nless otherwise noted

.5V

VGS = 3

VGS =

3V

o

C)

(

2.5

PULSE DURATION = 80Ps DUT

Y CYCLE = 0.5%MAX

2.0

VGS = 3

V

VGS =

0V

DRAIN CURRENT(A)

s

RMALIZED

NO

1.5

1.0

VGS = 1

0.5

DRAIN TO SOURCE ON-RESISTANCE

10 20 30 40 50 60

0

ID,

N

o r m a l i z e d O n - R e s i s t a n c e

VGS = 4.5V

3.5V

vs Drain Current and Gate Voltage

VGS = 4

V

®

MOSFET

AIN TO

, DR

n)

DS(o

r

)

(m

SOURCE ON-RESISTANCE

30

ID = 9.

25

20

15

10

5

34

VGS,

Figure 4.

6A

5678910

GATE TO SOURCE VOLTAGE (V)

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

TJ = 125oC

o

= 25

T

C

J

Source Voltage

60

SE DURATION = 80

PUL DU

TY CYCLE = 0.5%MAX

50

VDD = 5

V

40

30

20

DRAIN CURRENT (A)

,

10

D

I

0

01234

VGS,

Figure 5. Transfer Characteristics

Fairchild Semiconductor Corporation

FDMC8878 Rev.

D3

s

o

TJ =

C

25

o

TJ = 1

C

50

GATE TO SOURCE VOLTAGE (V)

TJ =

-55

100

V

= 0

GS

10

1

0.1

o

C

0.01

REVERSE DRAIN CURRENT (A) ,

S

I

0.001

TJ = 150oC

0.0

0.2 0.4 0.6 0.8 1.0 1.2

VSD,

BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -

TJ = 25oC

o

55

C

Forward Voltage vs Source Current

3

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