Fairchild FDMC8854 service manual

tm

FDMC8854

®

N-Channel Power Trench

30V, 15A, 5.7mΩ
Features

 Max r
 Max r
 Low Profile - 1mm max in Power 33
 RoHS Compliant

= 5.7mΩ at VGS = 10V, ID = 15A

DS(on)

= 7.6mΩ at VGS = 4.5V, ID = 13A

DS(on)

MOSFET

General Description

This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench
process. It has been optimized for power management
applications.

FDMC8854 N-Channel PowerTrench

February 2007

Application

 DC - DC Conversion

Bottom

8

7

6

5

1

2

3

4

D

Power 33

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 15

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 30
Power Dissipation TC = 25°C 41
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

A

Thermal Characteristics

Top

D

D

D

5
6
7

G

S

S

S

= 25°C 67

C

= 25°C (Note 1a) 15

A

= 25°C (Note 1a) 2.0

A

8

®

MOSFET

4
3
2
1

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 3
Thermal Resistance, Junction to Ambient (Note 1a) 60

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8854 FDMC8854 Power 33 7’’ 8mm 3000 units

©2007 Fairchild Semiconductor Corporation
FDMC8854 Rev.C

°C/W

1

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Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆BV
∆T

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 24V, V
Gate to Source Leakage Current VGS = ±20V, V

I

= 250µA, referenced to 25°C 21 mV/°C

D

= 0V 1 µA

GS

= 0V ±100 nA

GS

FDMC8854 N-Channel PowerTrench

On Characteristics

V

GS(th)

∆V
∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA11.93V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDS = 5V, ID = 15A 60 S

(Note 2)

I

= 250µA, referenced to 25°C -6 mV/°C

D

V

= 10V, ID = 15A 4.4 5.7

GS

= 4.5V, ID = 13A 5.6 7.6

GS

= 10V, ID = 15A, TJ = 125°C 6.6 9.0

V

GS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Input Capacitance
Output Capacitance 515 685 pF
Reverse Transfer Capacitance 290 435 pF

= 10V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance f = 1MHz 1.3 Ω

Turn-On Delay Time
Rise Time 510ns
Turn-Off Delay Time 31 50 ns

VDD = 10V, ID = 15A
V

= 10V, R

GS

GEN

Fall Time 510ns
Total Gate Charge
Gate to Source Gate Charge 7 nC
Gate to Drain “Miller” Charge 7 nC

=10V, ID = 15A,

V

DD

V

= 10V

GS

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 28 42 nC

= 0V, IS = 15A (Note 2) 0.8 1.3 V

GS

= 15A, di/dt = 100A/µs

I

F

= 6Ω

2560 3405 pF

13 23 ns

41 57 nC

33 50 ns

is guaranteed by design while R

θJC

is determined by

θCA

mΩV

®

MOSFET

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

FDMC8854 Rev.C

a. 60°C/W when mounted on

2

a 1 in

pad of 2 oz copper

b. 135°C/W when mounted on a
minimum pad of 2 oz copper

2

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FDMC8854 N-Channel PowerTrench

Typical Characteristics T

180

150

120

90

60

, DRAIN CURRENT (A)

D

I

30

0

012345

Figure 1.

1.8

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

1.6

1.4

1.2

1.0

NORMALIZED

0.8

0.6

DRAIN TO SOURCE ON-RESISTANCE

-75 -50 -25 0 25 50 75 100 125 150

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

VGS = 10.0V

VGS =4.5V

VGS = 4.0V

VGS = 3.5V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

VDS, DRAIN TO SOURCE V OLTAGE (V)

On-Region Characteristics Figure 2.

ID =15A
V

= 10V

GS

TJ, JUNCTION TEMPERATURE (oC)

= 25°C unless otherwise noted

J

3.0

2.5

VGS = 3.5V

2.0

1.5

NORMALIZED

1.0

0.5

DRAIN TO SOURCE ON-RESISTANCE

0 30 60 90 120 150 180

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

VGS = 4V

ID, DRAIN CURRENT(A)

VGS = 4.5V

VGS = 10.0V

Norma l i z e d O n - R esistance

vs Drain Current and Gate Voltage

15

(mΩ)

12

9

, DRAIN TO

DS(on)

r

6

SOURCE ON-RESISTANCE

3

246810

VGS, GATE TO SOURCE VOLTA GE (V)

Figure 4.

On-Resis tance vs Gate to

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

ID =15A

TJ = 125oC

o

T

= 25

C

J

Source Voltage

®

MOSFET

100

80

60

40

20

, DRAIN CURRENT (A)

D

I

FDMC8854 Rev.C

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

TJ = 150oC

0

1.5 2.0 2.5 3.0 3.5 4.0

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = -55oC

Figure 5. Transfer Characteristics

100

V

= 0V

GS

10

1

0.1

TJ = 150oC

TJ = 25oC

TJ = -55oC

0.01

, REVERSE DRAIN CURRENT (A)

S

I

1E-3

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWA RD VO LT AGE (V)

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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