Fairchild FDMC86320 service manual

FDMC86320

Bottom

D

D

D

D

S

S

S

G

Top

Pin 1

MLP 3.3x3.3

S

S

S

G

D

D

D

D

N-Channel Power Trench® MOSFET

80 V, 22 A, 11.7 mΩ

Features

 Max r

 Max r

 MSL1 robust package design

 100% UIL Tested

 RoHS Compliant

= 11.7 mΩ at VGS = 10 V, ID = 10.7 A

DS(on)

= 16 mΩ at VGS = 8 V, ID = 8.5 A

DS(on)

General Description

This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.

December 2011

, fast switching speed and body

DS(on)

FDMC86320 N-Channel Power Trench

Applications

 Primary DC-DC Switch

 Motor Bridge Switch

 Synchronous Rectifier

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 80 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC = 25 °C 22

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 50

Single Pulse Avalanche Energy (Note 3) 60 mJ

Power Dissipation TC = 25 °C 40

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 45

C

= 25 °C (Note 1a) 10.7

A

= 25 °C (Note 1a) 2.3

A

Thermal Characteristics

®

MOSFET

A

W

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC86320 FDMC86320 Power 33 13 ’’ 12 mm 3000 units

©2011 Fairchild Semiconductor Corporation
FDMC86320 Rev. C

Thermal Resistance, Junction to Case 3.1

Thermal Resistance, Junction to Ambient (Note 1a) 53

°C/W

1

www.fairchildsemi.com

FDMC86320 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 80 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current VDS = 64 V, V

Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 56 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.4 3.5 4.5 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -11 mV/°C

D

V

= 10 V, ID = 10.7 A 9.7 11.7

GS

= 8 V, ID = 8.5 A 11.4 16

GS

= 10 V, ID = 10.7 A, TJ = 125 °C 15 18

V

GS

Forward Transconductance VDS = 10 V, ID = 10.7 A 20 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 353 469 pF

Reverse Transfer Capacitance 12 30 pF

Gate Resistance 0.5 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 816ns

Turn-Off Delay Time 20 35 ns

Fall Time 510ns

Total Gate Charge V

Total Gate Charge 10 nC

Gate to Drain “Miller” Charge 6.9 nC

= 40 V, VGS = 0 V,

V

DS

f = 1 MHz

= 40 V, ID = 10.7 A,

V

DD

V

= 10 V, R

GS

= 0 V to 10 V

GS

V

= 0 V to 8 V 24 34 nC

GS

= 6 Ω

GEN

VDD = 40 V,
I

D

= 10.7 A

1985 2640 pF

15 28 ns

29 41 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting T

©2011 Fairchild Semiconductor Corporation
FDMC86320 Rev. C

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 27 43 nC

SF

SS

DS

DF

G

= 25 °C; N-ch: L = 0.3 mH, IAS = 20 A, VDD = 72 V, VGS = 10 V.

J

V

GS

V

GS

= 10.7 A, di/dt = 100 A/μs

I

F

a. 53 °C/W when mounted on a

2

pa d o f 2 oz co ppe r

1 in

= 0 V, IS = 10.7 A (Note 2) 0.84 1.3

= 0 V, IS = 2 A (Note 2) 0.75 1.2

38 61 ns

is guaranteed by design while R

θJC

b. 125 °C/W when mounted on a

minimum pad of 2 oz copper

SF

SS

DS

DF

G

2

θCA

www.fairchildsemi.com

V

is determined by

FDMC86320 N-Channel Power Trench

012345

0

10

20

30

40

50

VGS = 6.5 V

VGS = 5.5 V

VGS = 6 V

VGS = 7 V

VGS = 8 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 1020304050

0

1

2

3

4

5

VGS = 6.5 V

VGS = 6 V

VGS = 7 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 5.5 V

VGS = 8 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

ID = 10.7 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

5678910

0

10

20

30

40

TJ = 125 oC

ID = 10.7 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0 .5% MAX

2345678

0

10

20

30

40

50

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

50

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

vs Drain Current and Gate Voltage

N o r m a l i z e d O n - R e s i s t a n c e

®

MOSFET

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

vs Junction Temperature

©2011 Fairchild Semiconductor Corporation
FDMC86320 Rev. C

Figure 5. Transfer Characteristics

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

Figure 6.

S o u r ce t o D r a i n Di o d e

Forward Voltage vs Source Current

3

www.fairchildsemi.com