Fairchild FDMC86248 service manual

FDMC86248

S

S

S

G

D

D

D

D

Top

Power 33

Bottom

D

D

D

D

S

S

S

G

Pin 1

N-Channel Power Trench® MOSFET

150 V, 13 A, 90 mΩ

Features

 Max r
 Max r
 Advanced Package and Silicon combination for low r

and high efficiency

 100% UIL Tested
 RoHS Compliant

= 90 mΩ at VGS = 10 V, ID = 3.4 A

DS(on)

= 125 mΩ at VGS = 6 V, ID = 2.9 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

Applications

 Primary MOSFET
 MV synchronous rectifier

June 2012

®

process that has

FDMC86248 N-Channel Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC86248 FDMC86248 Power 33 13 ’’ 12 mm 3000 units

©2012 Fairchild Semiconductor Corporation
FDMC86248 Rev. C2

Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current -Continuous TC = 25 °C 13

-Pulsed 15
Single Pulse Avalanche Energy (Note 3) 37 mJ
Power Dissipation TC = 25 °C 36
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 3.4
Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

A

= 25 °C (Note 1a) 3.4

A

= 25 °C (Note 1a) 2.3

A

1

A -Continuous T

W

°C/W

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FDMC86248 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 120 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 104 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 3.2 4.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -9 mV/°C

D

V

= 10 V, ID = 3.4 A 69 90

GS

= 6 V, ID = 2.9 A 89 125

GS

= 10 V, ID = 3.4 A, TJ = 125 °C 140 183

V

GS

Forward Transconductance VDS = 10 V, ID = 3.4 A 10 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 50 70 pF
Reverse Transfer Capacitance 2.6 5.0 pF

= 75 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 0.8 2.0 Ω

393 525 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g(TOT)
g(TOT)
gs
gd

Turn-On Delay Time
Rise Time 1.4 10 ns
Turn-Off Delay Time 11 20 ns

= 75 V, ID = 3.4 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

Fall Time 2.8 10 ns
Total Gate Charge V
Total Gate Charge V
Total Gate Charge 1.9 nC

= 0 V to 10 V

GS

= 0 V to 5 V 3.7 5.2 nC

GS

VDD = 75 V,
I

= 3.4 A

D

Gate to Drain “Miller” Charge 1.7 nC

6.9 14 ns

6.4 9.0 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

is determined with the device moun ted o n a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. bo ard of FR-4 mate ria l. R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. E

of 37 mJ is based on starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 5 A, VDD = 150 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 12 A.

AS

©2012 Fairchild Semiconductor Corporation
FDMC86248 Rev. C2

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 48 77 nC

SF

SS

DS

DF

G

a.

53 °C/W when mounted on a

2

pad of 2 oz copper

1 in

V

= 0 V, IS = 3.4 A (Note 2) 0.80 1.3

GS

= 0 V, IS = 2 A (Note 2) 0.78 1.2

V

GS

= 3.4 A, di/dt = 100 A/μs

I

F

2

θJC

SS

SF

DF

DS

G

54 86 ns

is guaranteed by design while R

b.

125 °C/W when mounted on
a minimum pad of 2 oz copper

V

is determined by

θCA

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FDMC86248 N-Channel Power Trench

012345

0

3

6

9

12

15

VGS = 4.5 V

VGS = 6.5 V

VGS = 6 V

VGS = 10 V

VGS = 5 V

VGS = 5.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

03691215

0

1

2

3

4

5

VGS = 4.5 V

V

GS

= 6.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 6 V

VGS = 5.5 V

VGS = 5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

ID = 3.4 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

45678910

50

100

150

200

250

300

TJ = 125 oC

ID = 3.4 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTAG E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

234567

0

3

6

9

12

15

TJ = 25 oC

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SO UR C E V O LT AGE (V)

0.20.40.60.81.0

0.001

0.01

0.1

1

10

20

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norma l i z e d O n - Resistanc e

vs Drain Current and Gate Voltage

®

MOSFET

Figu r e 3. Nor m a lized O n - Resis t a nce

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation
FDMC86248 Rev. C2

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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